MUR3005 thru MUR3060 Pb Free Plating Product ® Pb MUR3005 thru MUR3060 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes TO-3P/TO-247AD Features 0.600(15.25) 0.580(14.75) 0.839(21.30) 0.819(20.80) Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds 0.095(2.40) 0.087(2.20) 0.070(1.80) 0.126(3.20) 0.110(2.80) 0.050(1.25) 0.045(1.15) Mechanical Data 0.199(5.05) 0.175(4.45) 0.170(4.30) 0.145(3.70) 0.798(20.25) 0.777(19.75) 0.142(3.60) 0.125(3.20) Unit: inch (mm) 0.640(16.25) 0.620(15.75) 0.030(0.75) 0.017(0.45) Cases: TO-3P/TO-247AD Package Type Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 grams 0.225(5.70) 0.204(5.20) 0.225(5.70) 0.204(5.20) Doubler Suffix "GD" Negative Suffix "PA" Positive Suffix "PT" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "PT" Common Anode Suffix "PA" Anode and Cathode Coexistence Suffix "GD" SYMBOL Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V Maximum Average Forward Rectified o Current TC=125 C MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA UNIT MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD IF(AV) 30.0 A IFSM 300 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 15.0 A VF 0.95 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.3 V 10 uA 500 uA 35 60 Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ 150 TJ, TSTG -55 to +150 Operating Junction and Storage Temperature Range 1.5 nS pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MUR3005 thru MUR3060 ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 250 200 150 100 50 0 0 50 100 150 1 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 MUR3005-MUR3020 10 MUR3030-MUR3040 MUR3060 1.0 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 100 NUMBER OF CYCLES AT 60Hz o LEAD TEMPERATURE, C IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 1.4 o TJ=125 C 10 1 0.1 o TJ=25 C 0.01 1.6 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/