MUR3005 thru MUR3060 - Thinki Semiconductor Co.,Ltd.

MUR3005 thru MUR3060
Pb Free Plating Product
®
Pb
MUR3005 thru MUR3060
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
TO-3P/TO-247AD
Features
0.600(15.25)
0.580(14.75)
0.839(21.30)
0.819(20.80)
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
0.095(2.40)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
Mechanical Data
0.199(5.05)
0.175(4.45)
0.170(4.30)
0.145(3.70)
0.798(20.25)
0.777(19.75)
0.142(3.60)
0.125(3.20)
Unit: inch (mm)
0.640(16.25)
0.620(15.75)
0.030(0.75)
0.017(0.45)
Cases: TO-3P/TO-247AD Package Type
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
Doubler
Suffix "GD"
Negative
Suffix "PA"
Positive
Suffix "PT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "PT"
Common Anode Suffix "PA"
Anode and Cathode Coexistence Suffix "GD"
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
o
Current TC=125 C
MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT
MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA
UNIT
MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD
IF(AV)
30.0
A
IFSM
300
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
0.95
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
1.3
V
10
uA
500
uA
35
60
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
150
TJ, TSTG
-55 to +150
Operating Junction and Storage
Temperature Range
1.5
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MUR3005 thru MUR3060
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
300
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
30
25
20
15
10
5
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
250
200
150
100
50
0
0
50
100
150
1
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
MUR3005-MUR3020
10
MUR3030-MUR3040
MUR3060
1.0
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
100
NUMBER OF CYCLES AT 60Hz
o
LEAD TEMPERATURE, C
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
1.4
o
TJ=125 C
10
1
0.1
o
TJ=25 C
0.01
1.6
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/