SKM 100GB125DN - TOTEM ELECTRO

SKM 100GB125DN
( 3 -4 5$ Absolute Maximum Ratings
Symbol Conditions
IGBT
6$2
$
$1:
(7 3 -4 5$
(7 3 *4+ 5$
Ultra Fast IGBT Module
SKM 100GB125DN
*-++
6
*++
%
(
3 94 5$
9+
%
*4+
%
< -+
6
(7 3 *-4 5$
*+
@
(
3 -4 5$
A4
%
(
3 9+ 5$
4
%
*4+
%
C-+
%
-++
%
D E+ BBB F *4+
5$
*-4
5$
E+++
6
$1:3- $
6$$ 3 ++ 6= 6;2 > -+ 6=
6$2 ? *-++ 6
Units
(
3 -4 5$
6;2
SEMITRANS® 2N
Values
Inverse Diode
!
!1:
!:
(7 3 *4+ 5$
!1:3- !
3 *+ = B
(7 3 *4+ 5$
Module
)1:,
(#7
(
Features
! " #
$% &$' &
$
'
(
)*+ , )-+ ,
Typical Applications*
. -+ /0
1
#
*++ /0
#
2
. -+ /0
6
%$ * B
( 3 -4 5$ Characteristics
Symbol Conditions
IGBT
6;2),
$2
6;2 3 6$2
$
min.
3 - %
6;2 3 + 6 6$2 3 6$2
6$2+
E4
(7 3 -4 5$
typ.
max.
44
4
6
+*4
+E4
%
(7 3 *-4 5$
%
(7 3 -4 5$
6
(7 3 *-4 5$
$2
6;2 3 *4 6
6
(7 3 -45$
G
(7 3 *-45$
6$2),
$
$
$ 3 C4 % 6;2 3 *4 6
6$2 3 -4 6;2 3 + 6
6;2 3 + D F-+6
1;
(7 3 5$
),
2
),
1; 3 9 G
1; 3 9 G
2
1)7D,
;'(
G
(7 3 5$
#B
HH
H94
6
3 * :0
4
+C-
+A
!
!
+H9
+4
!
$
I;
Units
4+
6$$ 3 ++6
$3 C4%
(7 3 *-4 5$
6;2 3 < *46
$
4
J
9+
E+
A
H+
-+
K
H4
K
+*9
LMN
GB
1
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
Characteristics
Symbol Conditions
Inverse Diode
6! 3 62$
!
3 C4 %= 6;2 3 + 6
6!+
min.
typ.
max.
Units
(7 3 -4 5$
#B
-
-4
6
(7 3 *-4 5$
#B
*9
(7 3 -4 5$
**
6
*-
(7 3 *-4 5$
!
®
SEMITRANS 2N
Ultra Fast IGBT Module
6
(7 3 -4 5$
*-
*CH
(7 3 *-4 5$
I
! 3 C4 %
M 3 9++ %M@
2
6;2 3 + 6= 6$$ 3 ++ 6
1)7D,&
11:
6
G
G
(7 3 *-4 5$
4+
**4
%
@$
E
K
+4
LMN
-4
Module
SKM 100GB125DN
Features
! " #
$% &$' &
$
'
(
)*+ , )-+ ,
$2
1$$OF22O
-+
B D
(
3 -4 5$
+C4
G
(
3 *-4 5$
*
G
1)D,
:
/ :
H
:
:4
-4
++4
LMN
4
4
*+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
. -+ /0
1
#
*++ /0
#
2
. -+ /0
GB
2
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
SEMITRANS® 2N
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
1
1
1
1
3*
33H
3E
3*
33H
A4
4
*C4
-4
++H-C
+++9
+++*C
/MN
/MN
/MN
/MN
3E
+++9
1
1
1
1
3*
33H
3E
3*
33H
H++
*+
H
E
++4E
+++*
+++*4
/MN
/MN
/MN
/MN
3E
+*
Zth(j-c)D
Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " #
$% &$' &
$
'
(
)*+ , )-+ ,
Typical Applications*
. -+ /0
1
#
*++ /0
#
2
. -+ /0
GB
3
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
UL Recognized
File 63 532
$
& AH
;'
6
$
& AH
02-08-2012 DIL
© by SEMIKRON