SKM 400GB126D ...
() * %
Absolute Maximum Ratings
Symbol Conditions
IGBT
+ () *
#
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$
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$
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5
Trench IGBT Module
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SKM 400GAL126D
Freewheeling Diode
! " #
Typical Applications*
$ %
&'
%
+ -() *
Inverse Diode
SKM 400GB126D
Features
#;
+ -). *
#;34
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Module
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$ - <
() * %
Characteristics
Symbol Conditions
IGBT
5=>
5 # -( $
#
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=>
5 -) min.
typ.
max.
Units
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$
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.A
+ ()*
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B
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20
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35
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35
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1
Units
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SEMITRANS® 3
Values
#5G
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# 2..$
+ -() *
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B
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(
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(1..
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22.
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--.
F
/1
F
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HIJ
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Characteristics
Symbol Conditions
Inverse Diode
; #;
2.. $7 5 . ;.
;
®
SEMITRANS 3
Trench IGBT Module
#334
D
#; 2.. $
%I% !2.. $I:
5 ?-) 7 !.. 3=+?>K
%%
min.
typ.
max.
Units
+ () *<
-!
-1
+ -() *<
-!
-1
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-
--
+ -() *
.1
.A
+ () *
(
(2
B
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(0
2
B
+ -() *
2A.
00
$
:
(0
F
. -1
HIJ
Freewheeling Diode
SKM 400GB126D
SKM 400GAL126D
; #;
2.. $7 5 . ;.
;
Features
! " #
Typical Applications*
$ %
&'
%
#334
D
#; 2.. $
%I% !2.. $I:
5 ?-) 7 !.. 3=+?>K
%%
+ () *<
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-1
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-1
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-
--
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00
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HIJ
Module
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%
4
N 4!
4
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2
)
O
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)
O
2()
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
3
3
3
3
(
2
/
(
2
))
(2!
./
. .2A2
. .-0. ..(
NIJ
NIJ
NIJ
NIJ
/
. ...(
3
3
3
3
(
2
/
(
2
-(.
/1
-.
(
. .(!(
. ./-0
. ..-(
NIJ
NIJ
NIJ
NIJ
/
. ..-
Zth(j-c)D
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Features
! " #
Typical Applications*
$ %
&'
%
GB
3
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
UL Recognized
File 63 532
K )!
5G
6
K )!
5$L
K )0 =P K )!>
06-10-2009 NOS
© by SEMIKRON