SKM 100GD063DL

SKM 100GD063DL
Absolute Maximum Ratings
Symbol Conditions
IGBT
5 1 23 4
5 1 -3. 4
:;
:;12(
1 234& $ )
'..
-7.
*
1 8. 4
93
*
2..
*
< 2.
5 1 -23 4
-.
@
1 23 4
-..
*
1 8. 4
A3
*
2..
*
A2.
*
SEMITRANS® 6
Superfast NPT-IGBT
Module
SKM 100GD063DL
1 7.. = > 2. =
? '.. Units
1 23 4
Values
Inverse Diode
+
5 1 -3. 4
+:;
+:;12(+
+;
1 -. = B
5 1 -3. 4
Module
:;
*
5
"
$
Features
!" #$%& $
$ " ' ( Characteristics
Symbol Conditions
IGBT
1 & 1 7 *
1 . & 1 Typical Applications*
) ) $
*
.
) $
+ , -. /!0
*& - B
1 -3 ) )
: 1 -. F
:5C
4
23..
typ.
max.
Units
D&3
3&3
'&3
5 1 23 4
.&-3
.&D3
*
5 1 23 4
-&.3
5 1 -23 4
-
5 1 234
-.&3
F
5 1 -234
-D
F
2&-
2&3
5 1 -234$B
2&D
2&8
1 - ;!0
3&'
.&'
+
+
.&D
+
2D.
3.
D.
D
7..
73
H
7
H
1 .BBB-3
: 1 -. F
C D. BBB E-23
min.
G
4
1 234& $ )
1 -.. *& 1 -3 5 1 234$B
1 23& 1 . C D. BBB E-3.
1 7..
1 -..*
5 1 -23 4
1 < -3
.&2A
IJK
GD
1
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Characteristics
Symbol Conditions
Inverse Diode
+ 1 ®
SEMITRANS 6
+
1 -.. *= 1 . min.
typ.
max.
Units
5 1 23 4$B
-&33
-&9
5 1 -23 4$B
-&33
+.
5 1 23 4
.&9
+
5 1 23 4
-.
F
::;
G
+ 1 -.. *
)J) 1 -... *J@
1 C-3 = 1 '.. :5CL
))
5 1 -23 4
8
DD
*
@
-&3
H
.&'
IJK
'.
!
.&.3
IJK
3
-A3
"
Module
Superfast NPT-IGBT
Module
SKM 100GD063DL
M
:C
)
$
;
/ ;3
D
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
!" #$%& $
$ " ' ( life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
) ) $
*
) $
+ , -. /!0
GD
2
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL recovered charge
4
24-08-2009 DIL
© by SEMIKRON
SKM 100GD063DL
UL recognized file
no E 63 532
L '8
L
5
'8
24-08-2009 DIL
© by SEMIKRON