SKM 300GB125D 5 .6 7'" # Absolute Maximum Ratings Symbol Conditions IGBT 8'4 9 5 .6 7' ' 9 5 +6, 7' '2= +.,, 8 ;,, ( 5 <, 7' .+, ( ?,, ( @ ., 8 +, E 5 .6 7' .A, ( 5 <, 7' +<, ( ?,, ( +<,, ( 6,, ( ?,FFFG +6, 7' ?,FFFG +.6 7' ?,,, 8 '2=5.>' Ultra Fast IGBT Module SKM 300GB125D 8'' 5 A,, 8B 84 C ., 8B 8'4 D +.,, 8 Units 5 .6 7' 84 SEMITRANS® 3 Values 9 5 +.6 7' Inverse Diode $ 9 5 +6, 7' $2= $2=5.>$ $= 5 +, B F 9 5 +6, 7' Module *2=&9 Features !" # $ % # & '( )' ) ' ! *+, - *., - Typical Applications* # / ., 01 2 & +,, 01 & 3 3 # / ., 01 4 # / ., 01 8 ('" + F 5 .6 7'" # Characteristics Symbol Conditions IGBT 84*- 84 5 8'4" ' 5 < ( '4 84 5 , 8" 8'4 5 8'4 8'4, '4 8'4*' ' 84 5 +6 8 typ. max. Units ?"6 6"6 A"6 8 9 5 .6 7' ,"+ ,"; ( 9 5 .6 7' +"6 +"H6 8 9 5 +.6 7' +"H 9 5 .67' I 9 5 +.67' ++"6 8 +,"6 J ;"; ;"<6 8 8'4 5 .6" 84 5 , 8 +< ."6 .? ;". $ $ + +"; $ K 84 5 ,8 G.,8 2 9 5 7' # 5 + =1 2 5 ; J 2## 5 ; J .,,, 8'' 5 A,,8 '5 .,,( 9 5 +.6 7' 84 5 @ +68 ' ."6 L +;, ?, +A ?A, ;, M 4## 2*9- J ' 5 .,, (" 84 5 +6 8 9 5 7'&F ' * 4 *### min. M ,",H6 NOP GB 1 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Characteristics Symbol Conditions Inverse Diode 8$ 5 84' $ 5 .,, (B 84 5 , 8 8$, min. typ. max. Units 9 5 .6 7'&F . ."6 8 9 5 +.6 7'&F +"< 9 5 .6 7' +"+ 8 +". 9 5 +.6 7' $ ® SEMITRANS 3 Ultra Fast IGBT Module 8 9 5 .6 7' ?"6 A"6 9 5 +.6 7' 22= K $ 5 .,, ( O 5 <,,, (OE 4 84 5 , 8B 8'' 5 A,, 8 2*9-) 8 J J 9 5 +.6 7' ;?, ?A ( E' M ,"+< NOP ., Module SKM 300GB125D Features !" # $ % # & '( )' ) ' ! *+, - *., - '4 2''QG44Q +6 F" 5 .6 7' ,";6 J 5 +.6 7' ,"6 J 2*- = 0 =A ; = =A ."6 ,",;< NOP 6 6 ;.6 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Typical Applications* # / ., 01 2 & +,, 01 & 3 3 # / ., 01 4 # / ., 01 GB 2 03-06-2009 NOS © by SEMIKRON SKM 300GB125D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 2 2 2 2 5+ 5. 5; 5? 5+ 5. 5; 6; +<"6 ;"+ ? ,",? ,",+<I ,",,+H 0OP 0OP 0OP 0OP 5? ,",,; 2 2 2 2 5+ 5. 5; 5? 5+ 5. 5; ++6 6. ++ . ,",;AA ,",++; ,",,; 0OP 0OP 0OP 0OP 5? ,",,,. Zth(j-c)D Ultra Fast IGBT Module SKM 300GB125D Features !" # $ % # & '( )' ) ' ! *+, - *., - Typical Applications* # / ., 01 2 & +,, 01 & 3 3 # / ., 01 4 # / ., 01 GB 3 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Fig. 1 Typ. output characteristic, tp = 80 µs; 125 °C Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V Fig. 6 Typ. gate charge characteristic 4 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 03-06-2009 NOS © by SEMIKRON SKM 300GB125D UL Recognized File 63 532 ' ) 6A 6 ' ) 6A 03-06-2009 NOS © by SEMIKRON