SKM 200GB176D .& / % Absolute Maximum Ratings Symbol Conditions IGBT 0 .& / # 0 2&) / 2')) .!) $ 3) / 23) $ 6)) $ 8 .) 2) < .& / .2) $ 3) / 2>) $ 6)) $ 0 2&) / 22)) $ .& / .2) $ 3) / 2>) $ 6)) $ 22)) $ &)) $ 0 ( >) ,,, ? 2&) / (>),,,?2.& / >))) #45."# 7 Trench IGBT Modules 2.)) 9 7 : .) 9 0 2.& / ; 2')) Inverse Diode #= 0 2&) / #=45 #=45."#= SKM 200GB176D #=5 2) 9 , SKM 200GAL176D Freewheeling Diode Features ! " # Typical Applications* $ % &'& ( '&) $ * +" ,- #= 0 2&) / #=45 #=45."#= #=5 2) 9 , 0 2&) / Module #+45- $ 2 , .& / % Characteristics Symbol Conditions IGBT 7+- 7 # ! $ # 7 ) ) + 7 2& max. Units &. &3 !> 6 $ 2 2. 0 2.& / )@ 22 0 .&/ !' 36 A 0 2.&/ 2) 2. A . . >& 0 2.&/, .> .@ 2 5B 22 > ) && = = ) >> = C7 7 (3,,,?2& 2.)) 47 0 .& / > .& D 6!) >& @6 '!) 2>) E &3 E %+ %+ 47 & A 47 & A 4+0(- 1 typ. 0 .& / # 2&) $ 7 2& 0 .&/, .& 7 ) min. 0 .& / GB Units .& / #45 SEMITRANS® 3 Values #7F 2.)) # 2&)$ 0 2.& / 7 8 2& ) 2. GHI GAL 28-06-2010 GIL © by SEMIKRON SKM 200GB176D Characteristics Symbol Conditions Inverse Diode = #= 2&) $9 7 ) =) = ® SEMITRANS 3 Trench IGBT Modules #445 C #= 2&) $ %H% 6')) $H< 7 (2& 9 2.)) 4+0(-J %% min. typ. max. Units 0 .& /, 2' 2@ 0 2.& /, 2' 2@ 0 .& / 22 26 0 2.& / )@ 22 0 .& / > > A 0 2.& / &6 &6 A 0 2.& / 2@& &. $ < 62 E ) .& GHI FWD SKM 200GB176D SKM 200GAL176D = #= 2&) $9 7 ) =) = Features ! " # #445 C #= 2&) $ %H% 6')) $H< 7 (2& 9 2.)) 4+0(-=J %% 2' 2@ 0 2.& /, 2' 2@ 0 .& / 22 26 0 2.& / )@ 22 0 .& / > > 0 2.& / &6 &6 0 2.& / 2@& &. $ < 62 E ) .& GHI Module K 4L?L 2& , ( Typical Applications* $ % &'& ( 4+(- % 5 M 5! 5 5! '&) $ * +" ,- 0 .& /, .) .& / ) 6& A 2.& / )& A ) )63 GHI 6 & N .& & N 6.& This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GB 2 GAL 28-06-2010 GIL © by SEMIKRON SKM 200GB176D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 4 4 4 4 2 . 6 > 2 . 6 3) 6) 3. 23 ) )'&6 ) )2 ) )))3 MHI MHI MHI MHI > ) )))6 4 4 4 4 2 . 6 > 2 . 6 2!) !' .) 6 ) )63. ) ))@ ) )))@ MHI MHI MHI MHI > ) ))& Zth(j-c)D Trench IGBT Modules SKM 200GB176D SKM 200GAL176D Features ! " # Typical Applications* $ % &'& ( '&) $ * +" ,- GB 3 GAL 28-06-2010 GIL © by SEMIKRON SKM 200GB176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 28-06-2010 GIL © by SEMIKRON SKM 200GB176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 Typ. CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode reverse recovery charge 5 28-06-2010 GIL © by SEMIKRON SKM 200GB176D UL Recognized File no. E 63 532 J &! 7F 6 J &! 7$K J &' 28-06-2010 GIL © by SEMIKRON