SKM 145GB123D

SKM 145GB123D
1 2 03 4* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
*5
&*
&*:
Values
16 2 03 4*
.0//
16 2 .3/ 4*
1 2 03 4*
.83
+
1 2 9/ 4*
../
+
0//
+
&*:20%&*
< 0/
;5
SEMITRANS® 2
IGBT Modules
SKM 145GB123D
SKM 145GAL123D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications*
# +* ./
@
1 2 03 4*
.A/
+
1 2 9/ 4*
B/
+
0//
+
16 2 .3/ 4*
B//
+
1 2 03 4*
.D/
+
1 2 9/ 4*
..3
+
A//
+
.88/
+
0//
+
16
' 8/ CCCE .3/
4*
1
' 8/ CCCE .03
4*
**
2 $// =
*5
;5
? .0//
> 0/ =
16 2 .03 4*
Inverse Diode
&(
16 2 .3/ 4*
&(:
&(:20%&(
&(
2 ./ = C
Freewheeling Diode
&(
16 2 .3/ 4*
&(:
&(:20%&(
&(
2 ./ = C
16 2 .3/ 4*
Module
&:
+* . C
03//
1 2 03 4* #
Characteristics
Symbol Conditions
IGBT
;5
&*5
;5
2
*5 &*
;5
2/ 2 8 +
*5
2
*5
*5/
*5
*5
*
*
;5
2 .3
&* 2 .// +
*5
2 03
;5
;5
2 .3
2/
16 2 03 4*
H;
:;
5
##
#
;5
5##
:6'
1
max.
83
33
$3
/.
/A
+
.8
.$
.9
16 2 034*
..
.8
F
16 2 .034*
.3
.B
F
16 2 4*
C
03
A
# 2 . G
$3
.
93
.3
(
(
/3
/$
(
2 $//
&*2 .//+
16 2 .03 4*
;5 2 '.3
**
.///
*
3
I
.$/
9/
.$
8//
D/
A0/
.$/
30/
.//
.0
&;-1
Units
.$
2 '9 ' E0/
:;## 2 $9 F
typ.
16 2 .03 4*
16 2 4*
:; 2 $9 F
min.
16 2 03 4*
*
GB
Units
J
J
/.3
KLM
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Characteristics
Symbol Conditions
Inverse Diode
(
2
5*
&( 2 .// +=
min.
;5
2/
(/
typ.
max.
16 2 03 4*
C
0
03
16 2 .03 4*
C
.9
16 2 03 4*
..
.8
B
..
Units
16 2 .03 4*
(
16 2 03 4*
16 2 .03 4*
®
SEMITRANS 2
IGBT Modules
&::
H
5
;5
:6',
2/ =
**
F
16 2 03 4*
A3
3
+
@*
2 $//
J
/A$
KLM
Freewheeling Diode
(
SKM 145GB123D
&( 2 .// +
L 2 ./// +L@
F
2
5*
&( 2 .3/ +=
;5
2/
(/
16 2 03 4*
C
0
16 2 .03 4*
C
.9
03
16 2 03 4*
..
.8
B
..
16 2 .03 4*
SKM 145GAL123D
(
16 2 03 4*
16 2 .03 4*
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications*
# +* &::
H
5
:6'(,
&( 2 .3/ +
;5
2/ =
16 2 03 4*
**
33
9
+
@*
2 $//
J
/A
KLM
Module
*5
:**NE55N
A/
C '
:'
O $
3
12 03 4*
/D3
F
12 .03 4*
.
F
//3
KLM
A
3
03
3
.$/
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
®
SEMITRANS 2
IGBT Modules
SKM 145GB123D
SKM 145GAL123D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
:
:
:
:
2.
20
2A
28
2.
20
2A
.//
A9
./
0
//A
//09D
///.0
OLM
OLM
OLM
OLM
28
////0
:
:
:
:
2.
20
2A
28
2.
20
2A
08/
B3
00
A
//38
//..A
///.0
OLM
OLM
OLM
OLM
28
///3
Zth(j-c)D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications*
# +* GB
3
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
UL Recognized
File no. E 63 532
* , $.
;-
6
* , $.
;+
* , $0 P , $.
25-04-2007 SEI
© by SEMIKRON