Si552 - Silicon Labs

Si 5 52
REVISION D
D U A L F REQUENCY VOLTAGE - C ON TROLLED C R Y S TA L
O SCILLATOR ( V C X O ) 1 0 MH Z TO 1.4 G H Z
Features


Available with any-rate output
frequencies from 10–945 MHz and
selected frequencies to 1.4 GHz
 Two selectable output frequencies

3rd generation DSPLL® with superior

jitter performance

 3x better frequency stability than
SAW-based oscillators


Internal fixed crystal frequency
ensures high reliability and low
aging
Available CMOS, LVPECL,
LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry-standard 5 x 7 mm
package and pinout
Pb-free/RoHS-compliant
Applications
Si5602
Ordering Information:

See page 10.

SONET/SDH
 xDSL
 10 GbE LAN/WAN
Low-jitter clock generation
 Optical modules
 Clock and data recovery
Description
The Si552 dual-frequency VCXO utilizes Silicon Laboratories’ advanced
DSPLL® circuitry to provide a very low jitter clock for all output frequencies.
The Si552 is available with any-rate output frequency from 10 to 945 MHz
and selected frequencies to 1400 MHz. Unlike traditional VCXOs, where a
different crystal is required for each output frequency, the Si552 uses one
fixed crystal frequency to provide a wide range of output frequencies. This
IC-based approach allows the crystal resonator to provide exceptional
frequency stability and reliability. In addition, DSPLL clock synthesis
provides superior supply noise rejection, simplifying the task of generating
low-jitter clocks in noisy environments typically found in communication
systems. The Si552 IC-based VCXO is factory-configurable for a wide
variety of user specifications including frequency, supply voltage, output
format, tuning slope, and temperature stability. Specific configurations are
factory programmed at time of shipment, thereby eliminating the long lead
times associated with custom oscillators.
Pin Assignments:
See page 9.
(Top View)
VC
1
6
VDD
FS
2
5
CLK–
GND
3
4
CLK+
Functional Block Diagram
VDD
CLK- CLK+
Fixed
Frequency XO
Any-rate
10–1400 MHz
DSPLL®
Clock Synthesis
ADC
VC
Rev. 1.1 4/13
FS
GND
Copyright © 2013 by Silicon Laboratories
Si552
Si5 52
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage1
Symbol
Test Condition
Min
Typ
Max
Units
VDD
3.3 V option
2.97
3.3
3.63
V
2.5 V option
2.25
2.5
2.75
V
1.8 V option
1.71
1.8
1.89
V
Output enabled
LVPECL
CML
LVDS
CMOS
—
—
—
—
120
108
99
90
130
117
108
98
Tristate mode
—
60
75
mA
VIH
0.75 x VDD
—
—
V
VIL
—
—
0.5
V
–40
—
85
ºC
Supply Current
Frequency Select
IDD
(FS)2
Operating Temperature Range
TA
mA
Notes:
1. Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 10 for further details.
2. FS pin includes a 17 k resistor to VDD.
Table 2. VC Control Voltage Input
Parameter
Control Voltage Tuning Slope
1,2,3
Control Voltage Linearity4
Symbol
Test Condition
Min
Typ
Max
Units
KV
10 to 90% of VDD
—
33
45
90
135
180
356
—
ppm/V
LVC
BSL
–5
±1
+5
%
Incremental
–10
±5
+10
%
Modulation Bandwidth
BW
9.3
10.0
10.7
kHz
VC Input Impedance
ZVC
500
—
—
k
—
VDD/2
—
V
VDD
V
Nominal Control Voltage
Control Voltage Tuning Range
VCNOM
@ fO
VC
0
Notes:
1. Positive slope; selectable option by part number. See Section 3. "Ordering Information" on page 10.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. KV variation is ±10% of typical values.
4. BSL determined from deviation from best straight line fit with VC ranging from 10 to 90% of VDD. Incremental slope
determined with VC ranging from 10 to 90% of VDD.
2
Rev. 1.1
Si552
Table 3. CLK± Output Frequency Characteristics
Parameter
Nominal Frequency
1,2,3
Symbol
Test Condition
Min
Typ
Max
Units
fO
LVDS/CML/LVPECL
10
—
945
MHz
CMOS
10
—
160
MHz
TA = –40 to +85 °C
–20
–50
–100
—
—
—
+20
+50
+100
ppm
±12
—
±375
ppm
Frequency drift over first year.
—
—
±3
ppm
Frequency drift over 15 year life.
—
—
±10
ppm
1,4
Temperature Stability
Absolute Pull Range1,4
APR
Aging
Power up Time5
tOSC
—
—
10
ms
Settling Time After FS Change
tFRQ
—
—
10
ms
Notes:
1. See Section 3. "Ordering Information" on page 10 for further details.
2. Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3. Nominal output frequency set by VCNOM = VDD/2.
4. Selectable parameter specified by part number.
5. Time from power up or tristate mode to fO (to within ±1 ppm of fO).
Table 4. CLK± Output Levels and Symmetry
Parameter
LVPECL Output
Option1
LVDS Output Option
2
CML Output Option2
Symbol
Test Condition
Min
Typ
Max
Units
VO
mid-level
VDD – 1.42
—
VDD – 1.25
V
VOD
swing (diff)
1.1
—
1.9
VPP
VSE
swing (single-ended)
0.55
—
0.95
VPP
VO
mid-level
1.125
1.20
1.275
V
VOD
swing (diff)
0.5
0.7
0.9
VPP
2.5/3.3 V option mid-level
—
VDD – 1.30
—
V
1.8 V option mid-level
—
VDD – 0.36
—
V
2.5/3.3 V option swing (diff)
1.10
1.50
1.90
VPP
1.8 V option swing (diff)
0.35
0.425
0.50
VPP
VOH
IOH = 32 mA
0.8 x VDD
—
VDD
V
VOL
IOL = 32 mA
—
—
0.4
V
tR, tF
LVPECL/LVDS/CML
—
—
350
ps
CMOS with CL = 15 pF
—
1
—
ns
45
—
55
%
VO
VOD
CMOS Output
Option3
Rise/Fall time (20/80%)
Symmetry (duty cycle)
SYM
LVPECL:
LVDS:
CMOS:
VDD – 1.3 V (diff)
1.25 V (diff)
VDD/2
Notes:
1. 50  to VDD – 2.0 V.
2. Rterm = 100  (differential).
3. CL = 15 pF
Rev. 1.1
3
Si5 52
Table 5. CLK± Output Phase Jitter
Parameter
1,2,3
Phase Jitter (RMS)
for FOUT > 500 MHz
Symbol
Test Condition
Min
Typ
Max
J
Kv = 33 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.26
0.26
—
—
Kv = 45 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.27
0.26
—
—
Kv = 90 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.32
0.26
—
—
Kv = 135 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.40
0.27
—
—
Units
ps
ps
ps
ps
Kv = 180 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
ps
—
—
0.49
0.28
—
—
Kv = 356 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.87
0.33
—
—
ps
Notes:
1. Refer to AN255, AN256, and AN266 for further information.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. See “AN255: Replacing 622 MHz VCSO devices with the Si550 VCXO” for comparison highlighting power supply
rejection (PSR) advantage of Si55x versus SAW-based solutions.
4. Max jitter for LVPECL output with VC=1.65V, VDD=3.3V, 155.52 MHz.
5. Max offset frequencies: 80 MHz for FOUT > 250 MHz, 20 MHz for 50 MHz < FOUT <250 MHz,
2 MHz for 10 MHz < FOUT <50 MHz.
4
Rev. 1.1
Si552
Table 5. CLK± Output Phase Jitter (Continued)
Parameter
Phase Jitter (RMS)1,2,3,4,5
for FOUT of 125 to 500 MHz
Symbol
Test Condition
Min
Typ
Max
J
Kv = 33 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.37
0.33
—
—
ps
Kv = 45 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.37
0.33
0.4
—
Kv = 90 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.43
0.34
—
—
Kv = 135 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.50
0.34
—
—
Kv = 180 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
—
—
0.59
0.35
—
—
Kv = 356 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
Units
ps
ps
ps
ps
ps
—
—
1.00
0.39
—
—
Notes:
1. Refer to AN255, AN256, and AN266 for further information.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. See “AN255: Replacing 622 MHz VCSO devices with the Si550 VCXO” for comparison highlighting power supply
rejection (PSR) advantage of Si55x versus SAW-based solutions.
4. Max jitter for LVPECL output with VC=1.65V, VDD=3.3V, 155.52 MHz.
5. Max offset frequencies: 80 MHz for FOUT > 250 MHz, 20 MHz for 50 MHz < FOUT <250 MHz,
2 MHz for 10 MHz < FOUT <50 MHz.
Rev. 1.1
5
Si5 52
Table 5. CLK± Output Phase Jitter (Continued)
Parameter
Phase Jitter (RMS)1,2,5
for FOUT 10 to 160 MHz
CMOS Output Only
Symbol
Test Condition
Min
Typ
Max
J
Kv = 33 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
—
—
0.63
0.62
—
—
ps
Kv = 45 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
—
—
0.63
0.62
—
—
Kv = 90 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
—
—
0.67
0.66
—
—
Kv = 135 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
—
—
0.74
0.72
—
—
Kv = 180 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
—
—
0.83
0.8
—
—
Kv = 356 ppm/V
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz
Units
ps
ps
ps
ps
ps
—
—
1.26
1.2
—
—
Notes:
1. Refer to AN255, AN256, and AN266 for further information.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. See “AN255: Replacing 622 MHz VCSO devices with the Si550 VCXO” for comparison highlighting power supply
rejection (PSR) advantage of Si55x versus SAW-based solutions.
4. Max jitter for LVPECL output with VC=1.65V, VDD=3.3V, 155.52 MHz.
5. Max offset frequencies: 80 MHz for FOUT > 250 MHz, 20 MHz for 50 MHz < FOUT <250 MHz,
2 MHz for 10 MHz < FOUT <50 MHz.
Table 6. CLK± Output Period Jitter
Parameter
Period Jitter*
Symbol
Test Condition
Min
Typ
Max
Units
JPER
RMS
—
2
—
ps
Peak-to-Peak
—
14
—
ps
*Note: Any output mode, including CMOS, LVPECL, LVDS, CML. N = 1000 cycles. Refer to AN279 for further information.
6
Rev. 1.1
Si552
Table 7. CLK± Output Phase Noise (Typical)
Offset Frequency
74.25 MHz
491.52 MHz
622.08 MHz
90 ppm/V
45 ppm/V
135 ppm/V
LVPECL
LVPECL
LVPECL
–87
–114
–132
–142
–148
–150
n/a
–75
–100
–116
–124
–135
–146
–147
–65
–90
–109
–121
–134
–146
–147
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
10 MHz
100 MHz
Units
dBc/Hz
Table 8. Environmental Compliance
The Si552 meets the following qualification test requirements.
Parameter
Conditions/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002.3 B
Mechanical Vibration
MIL-STD-883F, Method 2007.3 A
Solderability
MIL-STD-883F, Method 203.8
Gross & Fine Leak
MIL-STD-883F, Method 1014.7
Resistance to Solvents
MIL-STD-883F, Method 2016
Moisture Sensitivity Level
J-STD-020, MSL 1
Contact Pads
J-STD-020, MSL 1
Table 9. Thermal Characteristics
(Typical values TA = 25 ºC, VDD = 3.3 V)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Thermal Resistance Junction to Ambient
JA
Still Air
—
84.6
—
°C/W
Thermal Resistance Junction to Case
JC
Still Air
—
38.8
—
°C/W
Ambient Temperature
TA
–40
—
85
°C
Junction Temperature
TJ
—
—
125
°C
Rev. 1.1
7
Si5 52
Table 10. Absolute Maximum Ratings1
Parameter
Symbol
Rating
Units
TAMAX
85
ºC
Supply Voltage, 1.8 V Option
VDD
–0.5 to +1.9
V
Supply Voltage, 2.5/3.3 V Option
VDD
–0.5 to +3.8
V
Input Voltage (any input pin)
VI
–0.5 to VDD + 0.3
V
Storage Temperature
TS
–55 to +125
ºC
ESD
2500
V
TPEAK
260
ºC
tP
20–40
seconds
Maximum Operating Temperature
ESD Sensitivity (HBM, per JESD22-A114)
Soldering Temperature (Pb-free profile)
2
Soldering Temperature Time @ TPEAK (Pb-free profile)2
Notes:
1. Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions. Exposure to maximum rating conditions for
extended periods may affect device reliability.
2. The device is compliant with JEDEC J-STD-020C. Refer to Si5xx Packaging FAQ available for download from
www.silabs.com/VCXO for further information, including soldering profiles.
8
Rev. 1.1
Si552
2. Pin Descriptions
(Top View)
VC
1
6
VDD
FS
2
5
CLK–
GND
3
4
CLK+
Table 11. Si552 Pin Descriptions
Pin
Name
Type
Function
1
VC
Analog Input
2
FS*
Input
3
GND
Ground
Electrical and Case Ground
4
CLK+
Output
Oscillator Output
5
CLK–
(N/A for CMOS)
Output
Complementary Output
(N/C for CMOS)
6
VDD
Power
Power Supply Voltage
Control Voltage
Frequency Select:
0 = first frequency selected
1 = second frequency selected
*Note: FS includes a 17 k pullup resistor to VDD. See Section 3. "Ordering Information" on page 10 for details on frequency
select and OE polarity ordering options.
Rev. 1.1
9
Si5 52
3. Ordering Information
The Si552 supports a variety of options including frequency, temperature stability, tuning slope, output format, and
VDD. Specific device configurations are programmed into the Si552 at time of shipment. Configurations are
specified using the Part Number Configuration chart shown below. Silicon Labs provides a web browser-based part
number configuration utility to simplify this process. Refer to www.silabs.com/VCXOPartNumber to access this tool
and for further ordering instructions. The Si552 VCXO series is supplied in an industry-standard, RoHS-compliant,
lead-free, 6-pad, 5 x 7 mm package. Tape and reel packaging is an ordering option.
X
552
X
D
XXXXXX
G
R
R = Tape & Reel
Blank = Trays
552 Dual VCXO
Product Family
Operating Temp Range (°C)
G
–40 to +85 °C
Device Revision Letter
1st Option Code
Code
A
B
C
D
E
F
G
H
J
K
VDD
3.3
3.3
DD
3.3
3.3
2.5
2.5
2.5
2.5
1.8
1.8
Output Format
LVPECL
LVDS
CMOS
CML
LVPECL
LVDS
CMOS
CML
CMOS
CML
Notes:
CMOS available to 160 MHz.
6-digit Frequency Designator Code
Two unique frequencies can be specified within the following bands of frequencies: 10 to
945 MHz, 970 to 1134 MHz, and 1213 to 1417 MHz. A six digit code will be assigned for
the specified combination of frequencies. Codes > 000100 refer to dual XOs programmed
with the lower frequency value selected when FS = 0, and the higher value when FS = 1.
Six digit codes < 000100 refer to dual XOs programmed with the higher frequency value
selected when FS = 0, and the lower value when FS = 1.
2nd Option Code
Temperature
Stability
± ppm (max)
100
100
50
50
20
50
20
20
20
100
20
Tuning Slope
Kv
ppm/V (typ)
180
90
180
90
45
135
356
180
135
356
33
Minimum APR
(±ppm) for VDD @
2.5 V
1.8 V
75
25
Note 6
Note 6
125
75
30
25
Note 6
Note 6
75
50
300
235
145
105
104
70
220
155
Note 6
Note 6
Code
3.3 V
A
100
B
30
C
150
D
80
E
25
F
100
G
375
H
185
J
130
K
295
M
12
Notes:
1. For best jitter and phase noise performance, always choose the smallest Kv that meets
the application’s minimum APR requirements. Unlike SAW-based solutions which
require higher higher Kv values to account for their higher temperature dependence,
the Si55x series provides lower Kv options to minimize noise coupling and jitter in realworld PLL designs. See AN255 and AN266 for more information.
2. APR is the ability of a VCXO to track a signal over the product lifetime. A VCXO with an
APR of ±25 ppm is able to lock to a clock with a ±25 ppm stability over 15 years over all
operating conditions.
3. Nominal Pull range (±) = 0.5 x VDD x tuning slope.
4. Nominal Absolute Pull Range (±APR) = Pull range – stability – lifetime aging
= 0.5 x VDD x tuning slope – stability – 10 ppm
5. Minimum APR values noted above include worst case values for all parameters.
6. Combination not available.
Example Part Number: 552AF000108DGR is a 5x7mm Dual VCXO in a 6 pad package. Since the six digit code (000108) is >
000100, f0 is 644.53125 MHz (lower frequency) and f1 is 693.48299 (higher frequency), with a 3.3V supply and LVPECL output.
Temperature stability is specified as ± 50 ppm and the tuning slope is 135 ppm/V. The part is specified for a -40 to +85 C° ambient
temperature range operation and is shipped in tape and reel format.
Figure 1. Part Number Convention
10
Rev. 1.1
Si552
4. Package Outline and Suggested Pad Layout
Figure 2 illustrates the package details for the Si552. Table 12 lists the values for the dimensions shown in the
illustration.
Figure 2. Si552 Outline Diagram
Table 12. Package Diagram Dimensions (mm)
Dimension
A
b
c
D
D1
e
E
E1
H
L
p
R
aaa
bbb
ccc
ddd
eee
Min
1.50
1.30
0.50
4.30
6.10
0.55
1.17
1.80
Nom
1.65
1.40
0.60
5.00 BSC
4.40
2.54 BSC.
7.00 BSC.
6.20
0.65
1.27
—
0.70 REF
0.15
0.15
0.10
0.10
0.50
Rev. 1.1
Max
1.80
1.50
0.70
4.50
6.30
0.75
1.37
2.60
11
Si5 52
5. 6-Pin PCB Land Pattern
Figure 3 illustrates the 6-pin PCB land pattern for the Si552. Table 13 lists the values for the dimensions shown in
the illustration.
Figure 3. Si552 PCB Land Pattern
Table 13. PCB Land Pattern Dimensions (mm)
Dimension
Min
Max
D2
5.08 REF
e
2.54 BSC
E2
4.15 REF
GD
0.84
GE
2.00
—
—
VD
8.20 REF
VE
7.30 REF
X
1.70 TYP
Y
2.15 REF
ZD
—
6.78
ZE
—
6.30
Notes:
1. Dimensioning and tolerancing per the ANSI Y14.5M-1994 specification.
2. Land pattern design based on IPC-7351 guidelines.
3. All dimensions shown are at maximum material condition (MMC).
4. Controlling dimension is in millimeters (mm).
12
Rev. 1.1
Si552
6. Top Marking
6.1. Si552 Top Marking
6.2. Top Marking Explanation
Line
Position
1
1–10
“SiLabs”+ Part Family Number, 552 (First 3 characters in part number)
2
1–10
Si552: Option1+Option2+Freq(7)+Temp
Si552 w/ 8-digit resolution: Option1+Option2+ConfigNum(6)+Temp
3
Description
Trace Code
Position 1
Pin 1 orientation mark (dot)
Position 2
Product Revision (D)
Position 3–6
Tiny Trace Code (4 alphanumeric characters per assembly release instructions)
Position 7
Year (least significant year digit), to be assigned by assembly site (ex: 2007 = 7)
Position 8–9
Calendar Work Week number (1–53), to be assigned by assembly site
Position 10
“+” to indicate Pb-Free and RoHS-compliant
Rev. 1.1
13
Si5 52
DOCUMENT CHANGE LIST
Revision 0.6 to Revision 1.0

Updated Table 4 on page 3.
Updated
2.5 V/3.3 V and 1.8 V CML output level
specifications.

Updated Table 5 on page 4.
Removed
the words “Differential Modes:
LVPECL/LVDS/CML” in the footnote referring to AN256.
Added footnotes clarifying max offset frequency test
conditions.
Added CMOS phase jitter specs.

Updated Table 10 on page 8.
Separated
1.8 V, 2.5 V/3.3 V supply voltage
specifications.

Updated and clarified Table 8 on page 7
Added
“Moisture Sensitivity Level” and “Contact Pads”
rows.

Updated 6. "Top Marking" on page 13 to reflect
specific marking information (previously, figure was
generic).
 Updated 4. "Package Outline and Suggested Pad
Layout" on page 11.
Added
cyrstal impedance pin in Figure 2 on page 11 and
Table 12 on page 11.

Reordered spec tables and back matter to conform
to data sheet quality conventions.
Revision 1.0 to Revision 1.1

14
Added Table 9, “Thermal Characteristics,” on
page 7.
Rev. 1.1
Si552
CONTACT INFORMATION
Silicon Laboratories Inc.
400 West Cesar Chavez
Austin, TX 78701
Tel: 1+(512) 416-8500
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