CET4435A

CET4435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V.
RDS(ON) = 35mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-223 package.
G
D
S
D
G
SOT-223
ABSOLUTE MAXIMUM RATINGS
S
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
-8.8
A
IDM
-35
A
PD
3
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
42
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Specification and data are subject to change without notice .
7 - 42
Rev 1. 2006.January
http://www.cetsemi.com
CET4435A
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -24V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -8.8A
-1
20
24
mΩ
VGS = -4.5V, ID = -5A
27
35
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -15V, ID = -8.8A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
12
S
2220
pF
550
pF
230
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
12
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
24
ns
6
18
ns
110
140
ns
Turn-Off Fall Time
tf
35
70
ns
Total Gate Charge
Qg
22
28
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -15V, ID = -4.6A,
VGS = -5V
7
nC
8
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7 - 43
-2.1
A
-1.2
V
5
7
CET4435A
25
30
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=10,8,7,6,5V
20
15
-VGS=4V
10
5
-VGS=3V
24
25 C
18
12
6
TJ=125 C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
4
5
6
Figure 2. Transfer Characteristics
2000
1500
1000
Coss
500
Crss
0
0
5
10
15
20
25
2.2
1.9
ID=-8.8A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
3
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
-VGS, Gate-to-Source Voltage (V)
2500
1.2
1
-VDS, Drain-to-Source Voltage (V)
3000
1.3
-55 C
0
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
7 - 44
10
10
VDS=-15V
ID=-4.6A
8
6
4
2
0
10
5
10
15
20
25
30
1ms
10ms
100ms
1s
1
DC
10
10
10
0
2
RDS(ON)Limit
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CET4435A
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
PDM
0.02
10
t1
0.01
-2
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
7 - 45
10
1
10
2
2
7