CEC3833

CEC3833
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
D
30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V.
RDS(ON) = 7.2mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
G
High power and current handing capability.
Lead-free plating ; RoHS compliant.
S
D D D D
5
6
8
7
Bottom View
4
DFN3*3
ABSOLUTE MAXIMUM RATINGS
3
2
1
G S S S
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
17
A
IDM
68
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2013.Dec
http://www.cetsemi.com
CEC3833
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 30V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 14A
1
4.1
5
mΩ
VGS = 4.5V, ID =10A
5.2
7.2
mΩ
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
3120
pF
520
pF
380
pF
21
ns
15
ns
71
ns
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 14A,
VGS= 4.5V, RGEN= 6Ω
Turn-Off Fall Time
tf
32
ns
Total Gate Charge
Qg
28
nC
Gate-Source Charge
Qgs
7
nC
Gate-Drain Charge
Qgd
11
nC
VDS = 15V, ID = 14A,
VGS = 4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
1.25
A
1.2
V
CEC3833
15
25
25 C
9
6
VGS=3V
3
0
0
0.5
1.0
2.0
0
1
2
-55 C
3
4
5
Figure 2. Transfer Characteristics
Ciss
1200
Coss
600
Crss
0
3
6
9
12
15
2.2
1.9
ID=17A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
Figure 1. Output Characteristics
1800
1.2
5
VGS, Gate-to-Source Voltage (V)
2400
1.3
10
0
3000
0
15
2.5
IS, Source-drain current (A)
C, Capacitance (pF)
1.5
20
VDS, Drain-to-Source Voltage (V)
3600
VTH, Normalized
Gate-Source Threshold Voltage
ID, Drain Current (A)
12
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
ID, Drain Current (A)
VGS=10,8,6,4V
-25
0
25
50
75
100
125
VGS=0V
10
2
10
1
10
0
0.4
150
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
5
VDS=15V
ID=40A
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEC3833
3
2
1
0
0
7
14
21
28
35
10
2
10
1
10
0
10
-1
10
-2
RDS(ON)Limit
10ms
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
t2
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 10. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2