CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 ABSOLUTE MAXIMUM RATINGS S TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -60 Units V Gate-Source Voltage VGS ±20 V ID -2.4 A IDM -10 A PD 1.25 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 100 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEA6861 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -60V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -2.4A -1 105 135 mΩ VGS = -4.5V, ID = -1.9A 135 180 mΩ Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -30V, VGS = 0V, f = 1.0 MHz 890 pF 90 pF 85 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 26 ns 5 10 ns 39 78 ns Turn-Off Fall Time tf 13 26 ns Total Gate Charge Qg 11.2 14.8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -2.4A, VGS = -10V 2.6 nC 1.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 -2.4 A -1.2 V 6 CEA6861 10 5 -VGS=10,8,6,5V -ID, Drain Current (A) -ID, Drain Current (A) 25 C 8 6 4 -VGS=3.0V 2 4 3 2 1 -55 C TJ=125 C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 600 400 Coss 200 Crss 0 6 12 18 24 30 6 2.2 1.9 ID=-2.4A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 5 Figure 2. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 Figure 1. Output Characteristics 800 1.2 3 -VGS, Gate-to-Source Voltage (V) 1000 1.3 2 -VDS, Drain-to-Source Voltage (V) 1200 0 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =-30V DS ID=-2.4A 10 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEA6861 8 6 4 2 0 0 3 6 9 10 10 1 RDS(ON)Limit 1ms 10ms 1s 0 DC 10 10 12 2 6 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 -2 t1 0.01 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2