CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -30 Units V Gate-Source Voltage VGS ±12 V ID -4.9 A IDM -20 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Aug http://www.cetsemi.com CEH2305 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = -250µA -1.3 V VGS = -10V, ID = -4.9A 42 52 mΩ VGS = -4.5V, ID = -2.2A 54 65 mΩ VGS = -2.5V, ID = -1.2A 82 119 mΩ VDS = -10V, ID = -4.9A 5 910 S pF 160 pF 210 pF 10 ns 5 ns 43 ns VDS = -15V, VGS = 0V, f = 1.0 MHz -0.7 Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID= -4.9A, VGS = -10V, RGEN = 6Ω Turn-Off Fall Time tf 6 ns Total Gate Charge Qg 8.5 nC Gate-Source Charge Qgs 2.5 nC Gate-Drain Charge Qgd 1.6 nC VDS = -15V, ID = -4.9A, VGS = -4.5V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -4.9 A -1 V 7 CEH2305 20 10 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,6V 16 -VGS=5V 12 -VGS=4V 8 4 8 6 4 2 -VGS=3V TJ=125 C 0 0 1 2 3 4 5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1.2 1.5 1.8 Figure 2. Transfer Characteristics 1000 750 500 Crss 250 Coss 0 0 5 10 15 20 25 2.2 1.9 ID=-4.9A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 0.9 Figure 1. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 0.6 -VGS, Gate-to-Source Voltage (V) 1250 1.2 0.3 -VDS, Drain-to-Source Voltage (V) 1500 1.3 -55 C 0 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.6 0.7 0.8 0.9 1.0 1.1 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 5 V =-15V DS ID=-4.9A 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEH2305 4 3 2 1 10 10 10 10 0 0 3 6 9 1 1ms 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 1 D=0.5 10 0 0.2 0.1 0.05 10 PDM 0.02 0.01 -1 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 2 10 2 2 7