APTDF500U20G Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles • • • • • • Features A2 Benefits • • • • • K2 Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Tc = 25°C Tc = 80°C Tj = 25°C Max ratings Unit 200 V 500 500 850 5000 A June, 2006 K1 Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF500U20G – Rev 1 A S P M™ A S P M™ A1 • • • • • • APTDF500U20G VF Diode Forward Voltage Test Conditions IF = 500A IF = 1000A IF = 500A Tj = 150°C Tj = 25°C VR = 200V Tj = 150°C IRM Maximum Reverse Leakage Current CT Junction Capacitance VR = 200V LS Series Inductance Lead to Lead 5mm from Base Dynamic Characteristics Symbol Characteristic trr1 trr2 Reverse Recovery Time trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 dIM/dt Forward Recovery Time Reverse Recovery Current Reverse Recovery Charge IF = 500A VR = 100V di/dt=800A/µs Forward Recovery Voltage Rate of Fall of Recovery Current Wt Package Weight pF 40 nH Typ Max Unit Tj = 25°C 70 Tj = 100°C 150 Tj = 25°C 250 Tj = 100°C 250 ns ns Tj = 25°C 50 Tj = 100°C 120 Tj = 25°C 4.9 Tj = 100°C 22 Tj = 25°C 15 Tj = 100°C 15 Tj = 25°C Tj = 100°C 1200 1800 Typ To heatsink For terminals www.microsemi.com M5 M6 A µC V A/µs Max 0.08 2500 -40 -40 -40 2.5 3 µA 30 70 Min Unit V 0.95 2500 5000 Tj = 25°C Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Mounting torque Max 1.1 1.25 Min Thermal and package characteristics Torque Typ 1000 Test Conditions IF=1A,VR=30V di/dt = 15A/µs IF = 500A VR = 100V di/dt=800A/µs Min Unit °C/W V 150 125 100 3.5 4 250 °C N.m June, 2006 Symbol Characteristic g 2-3 APTDF500U20G – Rev 1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTDF500U20G Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF500U20G – Rev 1 June, 2006 A S P M™ A S P M™ LP4 Package outline (dimensions in mm)