CEM4307

CEM4307
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -5A, RDS(ON) = 44mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
Parameter
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-40
Units
V
Gate-Source Voltage
VGS
±20
V
ID
-5
A
IDM
-20
A
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now
Details are subject to change without notice .
1
Rev 1. 2012.Apr
http://www.cetsemi.com
CEM4307
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-40
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
IDSS
IGSSF
Gate Body Leakage Current, Reverse
IGSSR
Typ
Max
Units
VDS = -40V, VGS = 0V
-1
µA
VGS = 20V, VDS = 0V
100
nA
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -5.0A
-1
34
44
mΩ
VGS = -4.5V, ID = -2.5A
45
65
mΩ
Dynamic Characteristics d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -20, VGS = 0V,
f = 1.0 MHz
1125
pF
150
pF
100
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -20, ID = -5A,
VGS = -10V, RGEN = 3Ω
12
24
ns
5
10
ns
ns
33
66
Turn-Off Fall Time
tf
4
8
ns
Total Gate Charge
Qg
20
26
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -20V, ID = -5A,
VGS = -10V
2.5
nC
3.5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
-1.5
A
-1.3
V
CEM4307
10
-VGS=10,6,5V
8
6
-VGS=3V
4
2
0
0.0
1
2
3
4
5
1
2
3
4
5
6
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
400
Coss
200
Crss
0
5
10
15
20
25
2.2
1.9
ID=-5A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0
-VGS, Gate-to-Source Voltage (V)
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
TJ=125 C
2
-VDS, Drain-to-Source Voltage (V)
800
1.2
4
0
1000
1.3
6
6
1200
0
25 C
8
-ID, Drain Current (A)
-ID, Drain Current (A)
10
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=-20V
ID=-5A
8
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEM4307
6
4
2
0
0
4
8
12
16
20
10
2
10
1
RDS(ON)Limit
10
10ms
100ms
0
1s
DC
10
-1
10
-2
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
td(off)
tf
90%
90%
VOUT
VGS
RGEN
toff
tr
td(on)
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
10
Single Pulse
-2
10
-4
10
-3
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2