CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package. G2 S2 S2 D D 1 8 D S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 20 Units V Gate-Source Voltage VGS ±12 V ID 6.2 A IDM 25 A PD 1.25 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 100 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2006.June http://www.cetsemi.com Details are subject to change without notice . 1 CEG2288 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 20V, VGS = 0V 1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = 250µA 1.0 V VGS = 4.5V, ID = 6.2A 0.5 19 24 mΩ VGS = 2.5V, ID = 5.5A 25 34 mΩ d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 6.2A VDS = 10V, VGS = 0V, f = 1.0 MHz 17 S 835 pF 125 pF 95 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 6.2A, VGS = 5V, RGEN = 3Ω 10.7 27 ns 3.8 10 ns 25.3 63 ns 7 Turn-Off Fall Time tf 2.8 Total Gate Charge Qg 8.2 nC Gate-Source Charge Qgs 1.0 nC Gate-Drain Charge Qgd 1.9 nC VDS = 10V, ID = 6.2A, VGS = 4.5V ns Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 6.2 A 1.2 V 8 CEG2288 10 10 25 C VGS=2.0V 8 8 ID, Drain Current (A) ID, Drain Current (A) VGS=4.5,3.5,2.5V 6 4 2 6 4 2 TJ=125 C VGS=1.5V -55 C 0 0 0 1 2 3 0 Figure 2. Transfer Characteristics 750 500 250 Coss Crss 0 5 10 15 20 25 1.8 1.6 ID=6.2 VGS=4.5V 1.4 1.2 1.0 0.8 0.6 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2.0 Figure 1. Output Characteristics 1000 1.2 1.5 VGS, Gate-to-Source Voltage (V) 1250 1.3 1.0 VDS, Drain-to-Source Voltage (V) 1500 0 0.5 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 V =10V DS ID=6.2A 10 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEG2288 3 2 1 0 0 3 6 9 RDS(ON)Limit 10 10 10 10 12 2 1ms 10ms 100ms 1s DC 1 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 8 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2