32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge • Single-load for all data, command, control, address, and clock signals • Rank multiplication providing access to 4 physical ranks • Fast data transfer rates: PC3-14900 • 32GB (4 Gig x 72) • VDD = 1.5V ±0.075V • VDDSPD = 3.0V–3.6V • Supports ECC error detection and correction • Nominal and dynamic on-die termination (ODT) for data and strobe signals • Quad-rank, using 8Gb TwinDie™ devices • 8 internal device banks • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Two on-board temperature sensors • Gold edge contacts • Full module heat spreader • Halogen-free • Terminated control, command, and address bus Module Height: 30.35mm (1.195 in.) Options Marking • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) • Package – 240-pin DIMM (halogen-free) • Frequency/CAS latency – 1.07ns @ CL = 13 (DDR3-1866) None Z -1G9 Table 1: Key Timing Parameters Data Rate (MT/s) Speed Industry Grade Nomenclature CL = 13 CL = 11 CL = 10 tRCD tRP tRC CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 – 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 – – 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 – – – – 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 – – – – 1066 – 800 667 15 15 52.5 -80B PC3-6400 – – – – – – 800 667 15 15 52.5 PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Features Table 2: Addressing Parameter 32GB Refresh count 8K Row address 64K A[15:0] Device bank address 8 BA[2:0] Device configuration 8Gb TwinDie (2 Gig x 4) Column address 2K A[11, 9:0] Module rank address 4 S#[3:0] Table 3: Part Numbers and Timing Parameters – 32GB Modules Base device: MT41J2G41, 8Gb TwinDie DDR3 SDRAM Part Number2 MT72JSZS4G72LZ-1G9__ Notes: Module Density Configuration 32GB 4 Gig x 72 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 1. The data sheet for the base device can be found on Micron’s Web site. 2. All LRDIMM part numbers end with a two-place code (not shown) that designates component and PCB revisions, and a two-place code (also not shown) that indicates buffer vendor and revision. Consult factory for current revision codes. Example: MT72JSZS4G72LZ-1G9N1A7. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Pin Assignments Pin Assignments Table 4: Pin Assignments 240-Pin DDR3 LRDIMM Front 240-Pin DDR3 LRDIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREFDQ 31 DQ25 61 A2 91 DQ41 121 VSS 151 VSS 181 A1 211 VSS 2 VSS 32 VSS 62 VDD 92 VSS 122 DQ4 152 DQS12 182 VDD 212 DQS14 3 DQ0 33 DQS3# 63 NF 93 DQS5# 123 DQ5 153 DQS12# 183 VDD 213 DQS14# 4 DQ1 34 DQS3 64 NF 94 DQS5 124 VSS 154 VSS 184 CK0 214 VSS 5 VSS 35 VSS 65 VDD 95 VSS 125 DQS9 155 DQ30 185 CK0# 215 DQ46 6 DQS0# 36 DQ26 66 VDD 96 DQ42 126 DQS9# 156 DQ31 186 VDD 216 DQ47 7 DQS0 37 DQ27 67 VREFCA 97 DQ43 127 VSS 157 VSS 187 EVENT# 217 VSS 8 VSS 38 VSS 68 Par_In 98 VSS 128 DQ6 158 CB4 188 A0 218 DQ52 VDD 99 DQ48 129 DQ7 159 CB5 189 VDD 219 DQ53 A10/AP 100 DQ49 130 VSS 160 VSS 190 BA1 220 VSS DQS17 191 VDD 221 DQS15 9 DQ2 39 CB0 69 10 DQ3 40 CB1 70 11 VSS 41 VSS 71 BA0 101 VSS 131 DQ12 161 12 DQ8 42 DQS8# 72 VDD 102 DQS6# 132 DQ13 162 DQS17# 192 RAS# 222 DQS15# 13 DQ9 43 DQS8 73 WE# 103 DQS6 133 VSS 163 VSS 193 S0# 223 VSS 14 VSS 44 VSS 74 CAS# 104 VSS 134 DQS10 164 CB6 194 VDD 224 DQ54 15 DQS1# 45 CB2 75 VDD 105 DQ50 135 DQS10# 165 CB7 195 ODT0 225 DQ55 16 DQS1 46 CB3 76 S1# 106 DQ51 136 VSS 196 A13 226 VSS 17 VSS 47 VSS 77 ODT1 107 VSS 18 DQ10 48 VTT 78 VDD 108 DQ56 19 DQ11 49 VTT 79 S2# 109 20 VSS 50 CKE0 80 VSS VSS 166 137 DQ14 167 NF 197 VDD 227 DQ60 138 DQ15 168 RESET# 198 S3# 228 DQ61 DQ57 139 VSS 169 CKE1 199 VSS 229 VSS 110 VSS 140 DQ20 170 VDD 200 DQ36 230 DQS16 231 DQS16# 21 DQ16 51 VDD 81 DQ32 111 DQS7# 141 DQ21 171 A15 201 DQ37 22 DQ17 52 BA2 82 DQ33 112 DQS7 142 VSS 172 A14 202 VSS 232 VSS 23 VSS 53 Err_Out# 83 VSS 113 VSS 143 DQS11 173 VDD 203 DQS13 233 DQ62 24 DQS2# 54 VDD 84 DQS4# 114 DQ58 144 DQS11# 174 A12 204 DQS13# 234 DQ63 25 DQS2 55 A11 85 DQS4 115 DQ59 145 VSS 175 A9 205 VSS 235 VSS 26 VSS 56 A7 86 VSS 116 VSS 146 DQ22 176 VDD 206 DQ38 236 VDDSPD 27 DQ18 57 VDD 87 DQ34 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1 28 DQ19 58 A5 88 DQ35 118 SCL 148 VSS 178 A6 208 VSS 238 SDA 29 VSS 59 A4 89 VSS 119 SA2 149 DQ28 179 VDD 209 DQ44 239 VSS 30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 DQ45 240 VTT PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 5: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. CKx, CKx# Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input (LVCMOS) Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power-up was executed. Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address range on the I2C bus. SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communication to and from the temperature sensor/SPD EEPROM on the I2C bus. CBx I/O Check bits: Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQSx# I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; input with write data; center-aligned with write data. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Pin Descriptions Table 5: Pin Descriptions (Continued) Symbol Type SDA I/O Description Serial data: Used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the I2C bus. TDQSx, TDQSx# Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no function. Err_Out# Output Parity error output: Parity error found on the command and address bus. (open drain) EVENT# Output Temperature event: The EVENT# pin is asserted by the temperature sensor when crit(open drain) ical temperature thresholds have been exceeded. VDD Supply Power supply: 1.5V ±0.075V. The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. VREFCA Supply Reference voltage: Control, command, and address VDD/2. VREFDQ Supply Reference voltage: DQ, DM VDD/2. VSS Supply Ground. VTT Supply Termination voltage: Used for control, command, and address VDD/2. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM DQ Map DQ Map Table 6: Component-to-Module DQ Map, Front Component Reference Number Component DQ U1 U3 U5 U8 U10 U12 U14 U16 PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 19 28 U2 0 22 146 1 18 27 1 20 140 2 17 22 2 23 147 3 16 21 3 21 141 0 CB4 158 0 10 18 1 CB5 159 1 9 13 2 CB6 164 2 8 12 3 CB7 165 3 11 19 0 13 132 0 52 218 1 14 137 1 53 219 2 12 131 2 55 225 3 15 138 3 54 224 0 51 106 0 44 209 1 50 105 1 46 215 2 48 99 2 45 210 3 49 100 3 47 216 0 43 97 0 25 31 1 42 96 1 27 37 2 40 90 2 26 36 3 41 91 3 24 30 0 28 149 0 CB0 39 1 31 156 1 CB1 40 2 29 150 2 CB2 45 3 30 155 3 CB3 46 0 2 9 0 5 123 1 0 3 1 7 129 2 3 10 2 6 128 3 1 4 3 4 122 0 60 227 0 56 108 1 62 233 1 57 109 2 61 228 2 58 114 3 63 234 3 59 115 U4 U7 U9 U11 U13 U15 U17 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM DQ Map Table 6: Component-to-Module DQ Map, Front (Continued) Component Reference Number Component DQ Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number U18 0 38 206 U19 0 33 82 1 37 201 1 34 87 2 36 200 2 32 81 3 39 207 3 35 88 Table 7: Component-to-Module DQ Map, Back Component Reference Number Component DQ U20 U22 U25 U27 U29 U31 PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 42 96 U21 0 46 215 1 40 90 1 45 210 2 41 91 2 47 216 3 43 97 3 44 209 0 50 105 0 53 219 1 48 99 1 55 225 2 49 100 2 54 224 3 51 106 3 52 218 0 14 137 0 9 13 1 12 131 1 8 12 2 15 138 2 11 19 3 13 132 3 10 18 0 CB5 159 0 20 140 1 CB6 164 1 23 147 2 CB7 165 2 21 141 3 CB4 158 3 22 146 0 18 27 0 34 87 1 17 22 1 32 81 2 16 21 2 35 88 3 19 28 3 33 82 0 37 201 0 57 109 1 36 200 1 58 114 2 39 207 2 59 115 3 38 206 3 56 108 U23 U26 U28 U30 U32 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM DQ Map Table 7: Component-to-Module DQ Map, Back (Continued) Component Reference Number Component DQ U33 U35 U37 PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 62 233 U34 0 7 129 1 61 228 1 6 128 2 63 234 2 4 122 3 60 227 3 5 123 0 0 3 0 CB1 40 1 3 10 1 CB2 45 2 1 4 2 CB3 46 3 CB0 39 0 27 37 U36 3 2 9 0 31 156 1 29 150 1 26 36 2 30 155 2 24 30 3 28 149 3 25 31 U38 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram Rank 3 Rank 2 Rank 1 Rank 0 36 TwinDie DRAM in 4 Module Rank Configuration Data and Strobes Group A (Address/Command/Control/ Clock) CKE2A/B, ODT0A/B, CS2 Group B (Address/Command/Control/Clock) CKE3A/B, ODT1A/B, CS3 Memory Buffer Rank Multiplier CKE0A/B, ODT0A/B, CS0 A151 S#[1:0] S2#/A16 S3#/A17 DQS[17:0] DQS#[17:0] DQ[63:0] CB[7:0] VREFCA VREFDQ Configuration and Status Registers S#[3:0] BA[2:0] A[15:0]1 Par_In RAS# CAS# WE# CKE0 CKE1 ODT0 ODT1 CK0 RESET# CK0# Temp Sensor CKE1A/B, ODT1A/B, CS1 SPD/EEPROM Temp Sensor Err_Out# EVENT# SMBus Rank Multiplication Notes: PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN Data and Strobes Address/Command/Control/Clock EVENT# 1. The ZQ ball on each DDR3 die is connected to a separate external 240Ω ±1% resistor that is tied to VSS. This supports ZQ calibration to the entire device with one command set. It is used for the calibration of the component’s ODT and output driver. 2. A15 used for rank multiplication for 16GB module and for DRAM addressing for 32GB module. 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM General Description General Description The LRDIMM uses the same interface as the standard DDR3 RDIMM, but reduces the channel loading by buffering all signals that go to the DRAM. Like a standard RDIMM, the command, control, address, and clocks are redriven by the memory buffer and have similar characteristics to single-registered RDIMM. Additionally, the LRDIMM buffers all data and strobes through the memory buffer. This reduces the channel loading, as there is only a single load per signal, per module, for all DQ and DQS nodes. The LRDIMM is a high-speed, CMOS dynamic random access memory module that uses internally configured 8-bank DDR3 SDRAM devices. DDR3 architecture is an 8nprefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. For improved signal quality, the clock, control, command, and address buses have been routed in a fly-by topology, where each clock, control, command, and address pin on each DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3. LRDIMMs use two sets of differential signals: DQS/DQS# to capture data and CK/CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. The LRDIMM includes two temperature sensors: • A temperature sensor located within the memory buffer monitors the temperature of that high-current device on the PCB. • A temperature sensor integrated with the serial presence-detect (SPD) EEPROM monitors the temperature of the module PCB directly through a heat paddle under the EEPROM. The DRAM temperature is related to these two indicators by a combination of heat spreader performance, ambient temperature, and air flow. Memory Buffer Operation LRDIMMs provide increased performance by presenting a single memory buffer to the system, rather than multiple DRAM. Additionally, increased capacity is achieved due to the well-defined topology and load that is achieved on the module because the memory buffer drives only the SDRAM. Four chip selects are possible at the edge connector; however, the memory buffer provides an address multiplication feature to increase the number of ranks accessible to the system. The memory buffer uses one or two of the upper chip selects not directly usable by the SDRAM to generate additional chip selects. This feature is configurable within the memory buffer. Control and Status Registers The memory buffer contains control and status registers. All control and status registers are accessible through the SMBus, as well as through in-band channel commands. The PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM General Description registers can be read by software from the SMBus host any time the memory buffer is powered, except when the memory buffer is in clock-stopped power-down mode, or when the device RESET# pin is asserted. Temperature Sensor The memory buffer contains a class-C temperature sensor that can be configured to assert the EVENT# pin when temperature thresholds are exceeded. The temperature sensor is accessible through the SMBus. Parity Operations The memory buffer can accept a parity bit from the system’s memory controller, providing even parity for the control, command, and address bus. Parity is calculated from all command and address signals (CKE, ODT, and S# are not included in parity). The last bit of the sum is compared to the parity signal provided by the system at the Par_In pin. Parity errors are flagged on the Err_Out# pin. Parity is also checked during control-word programming. Serial Presence-Detect EEPROM with Temperature Sensor Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC standard JC-45, “Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Modules.” These bytes identify module-specific timing parameters, configuration information, and physical attributes. User-specific information can be written into the remaining 128 bytes of storage. READ/WRITE operations between the system (master) and the EEPROM (slave) device occur via the SMBus. Write-protect (WP) is connected to V SS, permanently disabling hardware write-protect. For further information please refer to Micron technical note TN-04-42, "Memory Module Serial Presence-Detect." Temperature Sensor A class-B temperature sensor is integrated with the SPD EEPROM component on the module. The sensor temperature is monitored and converted into a digital word via the SMBus. System designers can use the user-programmable registers to create a custom temperature-sensing solution based on system requirements. Programming and configuration details comply with JEDEC standard No. 21-C page 4.7-1, “Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor.” PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 8: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V Table 9: Operating Conditions Symbol VDD Parameter Min VDD supply voltage Nom Max Units Notes 1.425 1.5 1.575 V VREFCA(DC) Input reference voltage command/ address bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V VREFDQ(DC) I/O reference voltage DQ bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V –600 – 600 mA 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V 1 IVTT Termination reference current from VTT VTT Termination reference voltage (DC) – command/address bus TA Module ambient operating temperature Commercial 0 – 70 °C 2, 3 TC DDR3 SDRAM component case operating temperature Commercial 0 – 95 °C 2, 3, 4 Notes: PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 1. VTT termination voltage in excess of the stated limit will adversely affect the command and address signals’ voltage margin and will reduce timing margins. 2. TA and TC are simultaneous requirements. 3. For further information, refer to technical note TN-00-08: “Thermal Applications,” available on Micron’s Web site. 4. The refresh rate is required to double when 85°C < TC ≤ 95°C. 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available at micron.com. Module speed grades correlate with component speed grades, as shown below. Table 10: Module and Component Speed Grades DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -2G1 -093 -1G9 -107 -1G6 -125 -1G4 -15E -1G1 -187E -1G0 -187 -80C -25E -80B -25 Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM IDD Specifications IDD Specifications Table 11: DDR3 ICDD Specifications and Conditions – 32GB (Die Revision E) Values are for the MT41J2G4 DDR3 SDRAM only and are computed from values specified in the 8Gb TwinDie (2 Gig x 4) component data sheet Combined Parameter Symbol 1866 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE ICDD0 2484 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE ICDD1 2538 mA Precharge power-down current: Slow exit ICDD2P0 1296 mA Precharge power-down current: Fast exit ICDD2P1 1638 mA Precharge quiet standby current ICDD2Q 1908 mA Precharge standby current ICDD2N 1908 mA Precharge standby ODT current ICDD2NT 2034 mA Active power-down current ICDD3P 1710 mA Active standby current ICDD3N 2016 mA Burst read operating current ICDD4R 4320 mA Burst write operating current ICDD4W 3762 mA Refresh current ICDD5B 5634 mA Self refresh temperature current: MAX TC = 85°C ICDD6 1440 mA ICDD6ET 1800 mA All banks interleaved read current ICDD7 5886 mA Reset current ICDD8 1440 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM IDD Specifications Table 12: DDR3 ICDD Specifications and Conditions – 32GB (Die Revision N) Values are for the MT41K2G4 DDR3 SDRAM only and are computed from values specified in the 8Gb TwinDie 1.35V (2 Gig x 4) component data sheet Combined Parameter Symbol 1866 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE ICDD0 1728 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE ICDD1 1908 mA Precharge power-down current: Slow exit ICDD2P0 576 mA Precharge power-down current: Fast exit ICDD2P1 720 mA Precharge quiet standby current ICDD2Q 1224 mA Precharge standby current ICDD2N 1224 mA Precharge standby ODT current ICDD2NT 1368 mA Active power-down current ICDD3P 936 mA Active standby current ICDD3N 1440 mA Burst read operating current ICDD4R 2556 mA Burst write operating current ICDD4W 2556 mA Refresh current ICDD5B 3996 mA Self refresh temperature current: MAX TC = 85°C ICDD6 864 mA ICDD6ET 1152 mA All banks interleaved read current ICDD7 3366 mA Reset current ICDD8 720 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Temperature Sensor with Serial Presence-Detect EEPROM Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the SMBus bus shared with the SPD EEPROM and memory buffer. Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 13: Temperature Sensor with SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units VDDSPD 3.0 3.6 V Supply current: VDD = 3.3V IDD – 2.0 mA Input high voltage: Logic 1; SCL, SDA VIH VDDSPD x 0.7 VDDSPD + 1 V Input low voltage: Logic 0; SCL, SDA VIL –0.5 VDDSPD x 0.3 V Output low voltage: IOUT = 2.1mA VOL – 0.4 V Input current IIN –5.0 5.0 µA Temperature sensing range – –40 125 °C Temperature sensor accuracy (class B) – –1.0 1.0 °C Supply voltage Table 14: Temperature Sensor and SPD EEPROM Serial Interface Timing Parameter/Condition Symbol Min Max Units tBUF 4.7 – µs SDA fall time tF 20 300 ns SDA rise time tR – 1000 ns tHD:DAT 200 900 ns Start condition hold time tH:STA 4.0 – µs Clock HIGH period tHIGH 4.0 50 µs Clock LOW period tLOW 4.7 – µs tSCL 10 100 kHz Data setup time tSU:DAT 250 – ns Start condition setup time tSU:STA 4.7 – µs Stop condition setup time tSU:STO 4.0 – µs Time bus must be free before a new transition can start Data hold time SCL clock frequency EVENT# Pin The temperature sensor also adds the EVENT# pin (open-drain). Although not used by the SPD EEPROM, EVENT# is a temperature sensor output used to flag critical events that can be set up in the sensor’s configuration register. EVENT# has three defined modes of operation: interrupt mode, compare mode, and critical temperature mode. The open-drain output of EVENT# under the three separate operating modes is illustrated below. Event thresholds are programmed in the 0x01 regPDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Temperature Sensor with Serial Presence-Detect EEPROM ister using a hysteresis. The alarm window provides a comparison window, with upper and lower limits set in the alarm upper boundary register and the alarm lower boundary register, respectively. When the alarm window is enabled, EVENT# will trigger whenever the temperature is outside the MIN or MAX values set by the user. The interrupt mode enables software to reset EVENT# after a critical temperature threshold has been detected. Threshold points are set in the configuration register by the user. This mode triggers the critical temperature limit and both the MIN and MAX of the temperature window. The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by the user and returns to the logic HIGH state only when the temperature falls below the programmed thresholds. Critical temperature mode triggers EVENT# only when the temperature has exceeded the programmed critical trip point. When the critical trip point has been reached, the temperature sensor goes into comparator mode, and the critical EVENT# cannot be cleared through software. SMBus Slave Subaddress Decoding The temperature sensor’s physical address differs from the SPD EEPROM’s physical address: binary 0011 for A0, A1, A2, and RW#, where A2, A1, and A0 are the three slave subaddress pins and the RW# bit is the READ/WRITE flag. If the slave base address is fixed for the SPD EEPROM/temperature sensor, then the pins set the subaddress bits of the slave address, enabling the devices to be located anywhere within the eight slave address locations. For example, they could be set from 30h to 3Eh. Serial Presence-Detect Data For the latest serial presence-detect data, refer to Micron's SPD page: www.micron.com/SPD. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Module Dimensions Module Dimensions Figure 3: 240-Pin DDR3 LRDIMM 4.67(0.184) MAX Front view 133.50 (5.256) 133.20 (5.244) 0.9 (0.035) TYP 0.50 (0.02) R (4X) U1 U2 U3 U4 U5 U11 U12 U13 U14 U15 0.75 (0.03) R (8X) 2.50 (0.098) D (2X) U7 U8 U9 U10 U16 U17 U18 U19 U6 30.50 (1.2) 23.3 (0.92) 29.85 (1.175) TYP 17.3 (0.68) TYP 2.30 (0.091) TYP 2.20 (0.087) TYP 1.37 (0.054) 1.17 (0.046) 0.75 (0.03) R Pin 1 0.80 (0.031) TYP 1.0 (0.039) TYP 1.45 (0.057) TYP 54.68 (2.15) TYP 9.5 (0.374) TYP Pin 120 123.0 (4.84) TYP 15.0 (0.59) TYP (4X) 1.0 (0.039) R (8X) Back view 5.45 (0.215) TYP U20 U21 U22 U23 U30 U31 U32 U33 U24 45° 4X U25 U26 U27 U28 U29 U34 U35 U36 U37 U38 3.1 (0.122) 2X TYP 3.0 (0.118) 4X TYP 3.05 (0.12) TYP Pin 240 5.0 (0.197) TYP 71.0 (2.79) TYP Pin 121 47.0 (1.85) TYP 7.55 (0.297) MAX With heat spreader attached U1 U2 U3 U4 U5 U11 U12 U13 U14 U15 U20 U21 U22 U23 U30 U31 U32 U33 U7 U8 U9 U10 U16 U17 U18 U19 U25 U26 U27 U28 U29 U34 U35 U36 U37 U38 U6 U24 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. TwinDie is a trademark of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83b62686 jszs72c4gx72lz.pdf - Rev. F 2/15 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.