1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT4JTF12864AZ – 1GB MT4JTF25664AZ – 2GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C C) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 1GB (128 Meg x 64), 2GB (256 Meg x 64) • VDD = V DDQ = 1.5V ±0.075V • VDDSPD = 3.0–3.6V • Reset pin for improved system stability • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Single-rank • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Adjustable data-output drive strength • Serial presence-detect (SPD) EEPROM • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Module height: 30.0mm (1.181in) Options Marking • Operating temperature 1 – Commercial (0°C ≤ T A ≤ +70°C) • Package – 240-pin DIMM (halogen-free) • Frequency/CAS latency – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) Note: None Z -1G6 -1G4 -1G1 1. Contact Micron for industrial temperature module offerings. Table 1: Key Timing Parameters Data Rate (MT/s) Speed Grade Industry Nomenclature -1G6 PC3-12800 1600 -1G4 PC3-10600 -1G1 PC3-8500 -1G0 -80B tRP tRC CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) 1333 1333 1066 1066 800 667 13.125 13.125 48.125 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125 – – – 1066 1066 800 667 13.125 13.125 50.625 PC3-8500 – – – 1066 – 800 667 15 15 52.5 PC3-6400 – – – – – 800 667 15 15 52.5 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN CL = 11 CL = 10 tRCD Products and specifications discussed herein are subject to change by Micron without notice. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Features Table 2: Addressing Parameter 1GB 2GB 8K 8K Refresh count Row address 16K A[13:0] 32K A[14:0] Device bank address 8 BA[2:0] 8 BA[2:0] Device configuration 2Gb 128 Meg x 16 4Gb 256 Meg x 16 1K A[9:0] 1K A[9:0] 1 S0# 1 S0# Column address Module rank address Table 3: Part Numbers and Timing Parameters – 1GB Modules Base device: MT4J128M16,1 2Gb DDR3 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/Data Rate Clock Cycles (CL-tRCD-tRP) MT4JTF12864AZ-1G6__ 1GB 128 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT4JTF12864AZ-1G4__ 1GB 128 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT4JTF12864AZ-1G1__ 1GB 128 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Module Bandwidth Memory Clock/Data Rate Clock Cycles (CL-tRCD-tRP) Table 4: Part Numbers and Timing Parameters – 2GB Modules Base device: MT41J256M16,1 4Gb DDR3 SDRAM Module Part Number2 Density Configuration MT4JTF25664AZ-1G6__ 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT4JTF25664AZ-1G4__ 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT4JTF25664AZ-1G1__ 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4JTF25664AZ-1G6E1. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Pin Assignments Pin Assignments Table 5: Pin Assignments 240-Pin DDR3 UDIMM Front 240-Pin DDR3 UDIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREFDQ 31 DQ25 61 A2 91 DQ41 Pin Symbol Pin Symbol Pin Symbol Pin Symbol 121 VSS 151 VSS 181 A1 211 VSS 2 VSS 32 VSS 62 VDD 92 VSS 122 DQ4 152 DM3 182 VDD 212 DM5 3 DQ0 33 DQS3# 63 CK1 93 DQS5# 123 DQ5 153 NC 183 VDD 213 NC 4 DQ1 34 DQS3 64 CK1# 94 DQS5 124 VSS 154 VSS 184 CK0 214 VSS 5 VSS 35 VSS 65 VDD 95 VSS 125 DM0 155 DQ30 185 CK0# 215 DQ46 6 DQS0# 36 DQ26 66 VDD 96 DQ42 126 NC 156 DQ31 186 VDD 216 DQ47 7 DQS0 37 DQ27 67 VREFCA 97 DQ43 127 VSS 157 VSS 187 NC 217 VSS 8 VSS 38 VSS 68 NC 98 VSS 128 DQ6 158 NF 188 A0 218 DQ52 9 DQ2 39 NF 69 VDD 99 DQ48 129 DQ7 159 NF 189 VDD 219 DQ53 10 DQ3 40 NF 70 A10 100 DQ49 130 VSS 160 VSS 190 BA1 220 VSS 11 VSS 41 VSS 71 BA0 101 VSS 131 DQ12 161 NF 191 VDD 221 DM6 12 DQ8 42 NF 72 VDD 102 DQS6# 132 DQ13 162 NF 192 RAS# 222 NC 13 DQ9 43 NF 73 WE# 103 DQS6 133 VSS 163 VSS 193 S0# 223 VSS 14 VSS 44 VSS 74 CAS# 104 VSS 134 DM1 164 NF 194 VDD 224 DQ54 15 DQS1# 45 NF 75 VDD 105 DQ50 135 NC 165 NF 195 ODT0 225 DQ55 16 DQS1 46 NF 76 NF 106 DQ51 136 VSS 166 VSS 196 A13 226 VSS 17 VSS 47 VSS 77 NF 107 VSS 137 DQ14 167 NC 197 VDD 227 DQ60 18 DQ10 48 NC 78 VDD 108 DQ56 138 DQ15 168 RESET# 198 NC 228 DQ61 19 DQ11 49 NC 79 NC 109 DQ57 139 VSS 169 NF 199 VSS 229 VSS 20 VSS 50 CKE0 80 VSS 110 VSS 140 DQ20 170 VDD 200 DQ36 230 DM7 21 DQ16 51 VDD 81 DQ32 111 DQS7# 141 DQ21 171 NF 201 DQ37 231 NC 22 DQ17 52 BA2 82 DQ33 112 DQS7 142 VSS 172 NF/A141 202 VSS 232 VSS 23 VSS 53 NC 83 VSS 113 VSS 143 DM2 173 VDD 203 DM4 233 DQ62 24 DQS2# 54 VDD 84 DQS4# 114 DQ58 144 NC 174 A12 204 NC 234 DQ63 25 DQS2 55 A11 85 DQS4 115 DQ59 145 VSS 175 A9 205 VSS 235 VSS 26 VSS 56 A7 86 VSS 116 VSS 146 DQ22 176 VDD 206 DQ38 236 VDDSPD 27 DQ18 57 VDD 87 DQ34 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1 28 DQ19 58 A5 88 DQ35 118 SCL 148 VSS 178 A6 208 VSS 238 SDA 29 VSS 59 A4 89 VSS 119 SA2 149 DQ28 179 VDD 209 DQ44 239 VSS 30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 DQ45 240 VTT Note: PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 1. Pin 172 is NF for 1GB, A14 for 2GB. 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. CKx, CKx# Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input (LVCMOS) Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power-up was executed. Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address range on the I2C bus. SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communication to and from the temperature sensor/SPD EEPROM on the I2C bus. CBx I/O Check bits: Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQSx# I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; input with write data; center-aligned with write data. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Pin Descriptions Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O Description Serial data: Used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the I2C bus. TDQSx, TDQSx# Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no function. Err_Out# Output Parity error output: Parity error found on the command and address bus. (open drain) EVENT# Output Temperature event:The EVENT# pin is asserted by the temperature sensor when criti(open drain) cal temperature thresholds have been exceeded. VDD Supply Power supply: 1.5V ±0.075V. The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. VREFCA Supply Reference voltage: Control, command, and address VDD/2. VREFDQ Supply Reference voltage: DQ, DM VDD/2. VSS Supply Ground. VTT Supply Termination voltage: Used for control, command, and address VDD/2. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM DQ Map DQ Map Table 7: Component-to-Module DQ Map Component Reference Number Component DQ Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number U1 0 2 9 U2 0 18 27 1 1 4 1 17 22 2 3 10 2 19 28 3 5 123 3 21 141 4 6 128 4 22 146 5 4 122 5 20 140 6 7 129 6 23 147 7 0 3 7 16 21 8 8 12 8 24 30 9 15 138 9 31 156 10 9 13 10 25 31 11 11 19 11 27 37 12 12 131 12 28 149 13 14 137 13 30 155 14 13 132 14 29 150 15 10 18 15 26 36 0 34 87 0 50 105 1 33 82 1 49 100 2 35 88 2 51 106 3 37 201 3 53 219 4 38 206 4 54 224 5 36 200 5 52 218 6 39 207 6 55 225 7 32 81 7 48 99 8 40 90 8 56 108 U3 U4 9 47 216 9 63 234 10 41 91 10 57 109 11 43 97 11 59 115 12 44 209 12 60 227 13 46 215 13 62 233 14 45 210 14 61 228 15 42 96 15 58 114 PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram S0# CS# DQS0 DQS0# DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DM1 DQ DQ DQ DQ DQ DQ DQ DQ DQS DQS# DM DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U1 DQS DQS# DM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS# DQS4 DQS4# DM4 DQS DQS# DM DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3# DM3 DQ DQ DQ DQ DQ DQ DQ DQ DQS DQS# DM DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ DQ DQ DQ DQ DQ DQ DQ Note: PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN Command, address, and clock line terminations DDR3 SDRAM CKE0 A[14/13:0], RAS#, CAS#, WE#, ODT, BA[2:0] VTT DDR3 SDRAM CS# DQS6 DQS6# DM6 DQS DQS# DM DDR3 SDRAM X 4 CK1 CK1# DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS2 DQS2# DM2 BA[2:0]: DDR3 SDRAM A[13/12:0]: DDR3 SDRAM RAS#: DDR3 SDRAM CAS#: DDR3 SDRAM WE#: DDR3 SDRAM CKE0: DDR3 SDRAM ODT0: DDR3 SDRAM RESET#: DDR3 SDRAM CK0 CK0# U3 DQS DQS# DM DQS5 DQS5# DM5 DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ DQ BA[2:0] A[14/13:0] RAS# CAS# WE# CKE0 ODT0 RESET# DQS DQS# DM DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U2 DQ DQ DQ DQ DQ DQ DQ DQ DQS DQS# DM DQS7 DQS7# DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQ DQ DQ DQ DQ DQ DQ DQ VDD CK0 CK0# SCL U6 SPD EEPROM WP A0 VSS U4 VDDSPD A1 SDA A2 SA0 SA1 SA2 SPD EEPROM VDD DDR3 SDRAM VTT DDR3 SDRAM VREFCA DDR3 SDRAM VREFDQ DDR3 SDRAM VSS DDR3 SDRAM 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is used for the calibration of the component’s ODT and output driver. 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM General Description General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM modules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. Fly-By Topology DDR3 modules use faster clock speeds than earlier DDR technologies, making signal quality more important than ever. For improved signal quality, the clock, control, command, and address buses have been routed in a fly-by topology, where each clock, control, command, and address pin on each DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3. Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Modules." These bytes identify module-specific timing parameters, configuration information, and physical attributes. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to V SS, permanently disabling hardware write protection. For further information refer to Micron technical note TN-04-42, "Memory Module Serial Presence-Detect." PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 8: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V Table 9: Operating Conditions Symbol Parameter Min Nom Max VDD supply voltage 1.425 1.5 1.575 V VREFCA(DC) Input reference voltage command/address bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V VREFDQ(DC) I/O reference voltage DQ bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V –600 – 600 mA VDD IVTT Termination reference current from VTT VTT Termination reference voltage (DC) – command/address bus II V 1 Address inputs, RAS#, CAS#, WE#, BA, S#, CKE, ODT, CK, CK# –8 0 8 DM –2 0 2 DQ, DQS, DQS# –5 0 5 µA VREF supply leakage current; VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) –4 0 4 µA TA Module ambient operating temperature 0 – 70 °C 2, 3 TC DDR3 SDRAM component case operating temperature 0 – 95 °C 2, 3, 4 IOZ IVREF Input leakage current; Any input 0V ≤ VIN ≤ VDD; VREF input 0V ≤ VIN ≤ 0.95V (All other pins not under test = 0V) 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV Units Notes Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT are disabled; ODT is HIGH Notes: PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN µA 1. VTT termination voltage in excess of the stated limit will adversely affect the command and address signals’ voltage margin and will reduce timing margins. 2. TA and TC are simultaneous requirements. 3. For further information, refer to technical note TN-00-08: ”Thermal Applications,” available on Micron’s Web site. 4. The refresh rate is required to double when 85°C < TC ≤ 95°C. 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s web site. Module speed grades correlate with component speed grades, as shown below. Table 10: Module and Component Speed Grades DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -2G1 -093 -1G9 -107 -1G6 -125 -1G4 -15E -1G1 -187E -1G0 -187 -80C -25E -80B -25 Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM IDD Specifications IDD Specifications Table 11: DDR3 IDD Specifications and Conditions – 1GB (Die Revision D) Values are for the MT41J128M16 DDR3 SDRAM only and are computed from values specified in the 2Gb (128 Meg x 16) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 440 400 360 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 540 520 500 mA Precharge power-down current: Slow exit IDD2P0 48 48 48 mA Precharge power-down current: Fast exit IDD2P1 160 140 120 mA Precharge quiet standby current IDD2Q 160 140 120 mA Precharge standby current IDD2N 168 148 128 mA Precharge standby ODT current IDD2NT 260 240 220 mA Active power-down current IDD3P 180 160 140 mA Active standby current IDD3N 180 160 140 mA Burst read operating current IDD4R 1080 980 800 mA Burst write operating current IDD4W 1120 1020 840 mA Refresh current IDD5B 860 800 760 mA Self refresh temperature current: MAX TC = 85°C IDD6 48 48 48 mA IDD6ET 60 60 60 mA All banks interleaved read current IDD7 1900 1700 1500 mA Reset current IDD8 56 56 56 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM IDD Specifications Table 12: DDR3 IDD Specifications and Conditions – 2GB (Die Revision E) Values are for the MT41J256M16 DDR3 SDRAM only and are computed from values specified in the 4Gb (256 Meg x 16) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 264 232 220 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 348 336 320 mA Precharge power-down current: Slow exit IDD2P0 72 72 72 mA Precharge power-down current: Fast exit IDD2P1 128 112 104 mA Precharge quiet standby current IDD2Q 128 112 108 mA Precharge standby current IDD2N 128 116 112 mA Precharge standby ODT current IDD2NT 168 156 140 mA Active power-down current IDD3P 152 140 128 mA Active standby current IDD3N 188 180 164 mA Burst read operating current IDD4R 940 808 740 mA Burst write operating current IDD4W 684 608 548 mA Refresh current IDD5B 940 912 896 mA Self refresh temperature current: MAX TC = 85°C IDD6 80 80 80 mA IDD6ET 100 100 100 mA All banks interleaved read current IDD7 972 868 792 mA Reset current IDD8 72 72 72 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Serial Presence-Detect EEPROM Serial Presence-Detect EEPROM For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 13: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to VDDSPD Parameter/Condition Symbol Min Max Units VDDSPD 3.0 3.6 V VIL –0.45 VDDSPD x 0.3 V Input high voltage: Logic 1; All inputs VIH VDDSPD x 0.7 VDDSPD + 1.0 V Output low voltage: IOUT = 3mA VOL – 0.4 V Input leakage current: VIN = GND to VDD ILI 0.1 2.0 µA Output leakage current: VOUT = GND to VDD ILO 0.05 2.0 µA Supply voltage Input low voltage: Logic 0; All inputs Table 14: Serial Presence-Detect EEPROM AC Operating Conditions Parameter/Condition Symbol Min Max Units tSCL 10 400 kHz Clock frequency Notes Clock pulse width HIGH time tHIGH 0.6 – µs Clock pulse width LOW time tLOW 1.3 – µs SDA rise time tR – 300 µs 1 SDA fall time tF 20 300 ns 1 Data-in setup time tSU:DAT 100 – ns Data-in hold time tHD:DI 0 – µs Data-out hold time tHD:DAT 200 900 ns Data out access time from SCL LOW tAA:DAT 0.2 0.9 µs 2 Start condition setup time tSU:STA 0.6 – µs 3 Start condition hold time tHD:STA 0.6 – µs Stop condition setup time tSU:STO 0.6 – µs tBUF 1.3 – µs tW – 10 ms Time the bus must be free before a new transition can start WRITE time Notes: PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 1. Guaranteed by design and characterization, not necessarily tested. 2. To avoid spurious start and stop conditions, a minimum delay is placed between the falling edge of SCL and the falling or rising edge of SDA. 3. For a restart condition, or following a WRITE cycle. 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Module Dimensions Module Dimensions Figure 3: 240-Pin DDR3 UDIMM Front view 2.70 (0.106) MAX 133.50 (5.256) 133.20 (5.244) 0.75 (0.03) R (8X) U2 U1 U3 30.50 (1.20) 29.85 (1.175) U4 U6 2.50 (0.098) D (2X) 17.3 (0.68) TYP 2.30 (0.091) TYP 0.76 (0.030) R Pin 1 2.20 (0.087) TYP 1.0 (0.039) TYP 1.45 (0.057) TYP 0.80 (0.031) TYP 9.5 (0.374) TYP 1.37 (0.054) 1.17 (0.046) Pin 120 54.68 (2.15) TYP 123.0 (4.84) TYP Back view 45° (4X) No components this side of module 3.0 (0.118) x4 TYP 3.05 (0.12) TYP Pin 240 Notes: Pin 121 5.0 (0.197) TYP 47.0 (1.85) TYP 71.0 (2.79) TYP 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83cad6ed jtf4c128_256x64az.pdf - Rev. D 04/13 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.