4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C M) • DDR3L functionality and operations supported as per the component data sheet • 240-pin, very low profile, 18.75mm, registered dual in-line memory module (VLP RDIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 4GB (512 Meg x 72) • VDD = 1.35V (1.283–1.45V) • VDD = 1.5V (1.425–1.575V) • Backward compatible to V DD = 1.5V ±0.075V • VDDSPD = 3.0–3.6V • Supports ECC error detection and correction • Nominal and dynamic on-die termination (ODT) for data and strobe signals • Single-rank • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM • 8 internal device banks • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Module height: 18.75mm (0.738in) Options Marking • Operating temperature – Commercial (0°C ≤ T A ≤ +70°C) • Package – 240-pin DIMM (halogen-free) • Frequency/CAS latency – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) None Z -1G6 -1G4 -1G1 Table 1: Key Timing Parameters Data Rate (MT/s) Speed Grade Industry Nomenclature -1G6 PC3-12800 1600 -1G4 PC3-10600 -1G1 PC3-8500 -1G0 -80B tRP tRC CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) 1333 1333 1066 1066 800 667 13.125 13.125 48.125 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125 – – – 1066 1066 800 667 13.125 13.125 50.625 PC3-8500 – – – 1066 – 800 667 15 15 52.5 PC3-6400 – – – – – 800 667 15 15 52.5 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN CL = 11 CL = 10 tRCD Products and specifications discussed herein are subject to change by Micron without notice. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Features Table 2: Addressing Parameter 4GB Refresh count 8K Row address 32K A[14:0] Device bank address 8 BA[2:0] Device configuration 2Gb (512 Meg x 4) Column address 2K A[11, 9:0] Module rank address 1 S0# Table 3: Part Numbers and Timing Parameters – 4GB Modules Base device: MT41K512M4,1 2Gb DDR3 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) MT18KDF51272PZ-1G6__ 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KDF51272PZ-1G4__ 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KDF51272PZ-1G1__ 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18KDF51272PZ-1G4K1. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Pin Assignments Pin Assignments Table 4: Pin Assignments 240-Pin DDR3 RDIMM Front 240-Pin DDR3 RDIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin 1 VREFDQ 31 DQ25 61 A2 91 DQ41 121 VSS 151 VSS 181 A1 211 VSS 2 VSS 32 VSS 62 VDD 92 VSS 122 DQ4 152 DQS12 182 VDD 212 DQS14 3 DQ0 33 DQS3# 63 NF 93 DQS5# 123 DQ5 153 DQS12# 183 VDD 213 DQS14# 4 DQ1 34 DQS3 64 NF 94 DQS5 124 VSS 154 VSS 184 CK0 214 VSS 5 VSS 35 VSS 65 VDD 95 VSS 125 DQS9 155 DQ30 185 CK0# 215 DQ46 6 DQS0# 36 DQ26 66 VDD 96 DQ42 126 DQS9# 156 DQ31 186 VDD 216 DQ47 7 DQS0 37 DQ27 67 VREFCA 97 DQ43 127 VSS 157 VSS 187 EVENT# 217 VSS 8 VSS 38 VSS 68 Par_In 98 VSS 128 DQ6 158 CB4 188 A0 218 DQ52 9 DQ2 39 CB0 69 VDD 99 DQ48 129 DQ7 159 CB5 189 VDD 219 DQ53 10 DQ3 40 CB1 70 A10 100 DQ49 130 VSS 160 VSS 190 BA1 220 VSS 11 VSS 41 VSS 71 BA0 101 VSS 131 DQ12 161 DQS17 191 VDD 221 DQS15 12 DQ8 42 DQS8# 72 VDD 102 DQS6# 132 DQ13 162 DQS17# 192 RAS# 222 DQS15# 13 DQ9 43 DQS8 73 WE# 103 DQS6 133 VSS 163 VSS 193 S0# 223 VSS 14 VSS 44 VSS 74 CAS# 104 VSS 134 DQS10 164 CB6 194 VDD 224 DQ54 15 DQS1# 45 CB2 75 VDD 105 DQ50 135 DQS10# 165 CB7 195 ODT0 225 DQ55 16 DQS1 46 CB3 76 NC 106 DQ51 136 VSS 166 VSS 196 A13 226 VSS 17 VSS 47 VSS 77 NC 107 VSS 137 DQ14 167 NU 197 VDD 227 DQ60 18 DQ10 48 VTT 78 VDD 108 DQ56 138 DQ15 168 RESET# 198 NC 228 DQ61 19 DQ11 49 VTT 79 NC 109 DQ57 139 VSS 169 NC 199 VSS 229 VSS 20 VSS 50 CKE0 80 VSS 110 VSS 140 DQ20 170 VDD 200 DQ36 230 DQS16 21 DQ16 51 VDD 81 DQ32 111 DQS7# 141 DQ21 171 A15 201 DQ37 231 DQS16# 22 DQ17 52 BA2 82 DQ33 112 DQS7 142 VSS 172 A14 202 VSS 232 VSS 23 VSS 53 Err_Out# 83 VSS 113 VSS 143 DQS11 173 VDD 203 DQS13 233 DQ62 24 DQS2# 54 VDD 84 DQS4# 114 DQ58 144 DQS11# 174 A12 204 DQS13# 234 DQ63 25 DQS2 55 A11 85 DQS4 115 DQ59 145 VSS 175 A9 205 VSS 235 VSS 26 VSS 56 A7 86 VSS 116 VSS 146 DQ22 176 VDD 206 DQ38 236 VDDSPD 27 DQ18 57 VDD 87 DQ34 117 SA0 147 DQ23# 177 A8 207 DQ39 237 SA1 28 DQ19 58 A5 88 DQ35 118 SCL 148 VSS 178 A6 208 VSS 238 SDA 29 VSS 59 A4 89 VSS 119 SA2 149 DQ28 179 VDD 209 DQ44 239 VSS 30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 DQ45 240 VTT PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 3 Symbol Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 5: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. CKx, CKx# Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input (LVCMOS) Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power-up was executed. Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address range on the I2C bus. SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communication to and from the temperature sensor/SPD EEPROM on the I2C bus. CBx I/O Check bits: Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQSx# I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; input with write data; center-aligned with write data. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Pin Descriptions Table 5: Pin Descriptions (Continued) Symbol Type SDA I/O Description Serial data: Used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the I2C bus. TDQSx, TDQSx# Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no function. Err_Out# Output Parity error output: Parity error found on the command and address bus. (open drain) EVENT# Output Temperature event: The EVENT# pin is asserted by the temperature sensor when crit(open drain) ical temperature thresholds have been exceeded. VDD Supply Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. VREFCA Supply Reference voltage: Control, command, and address VDD/2. VREFDQ Supply Reference voltage: DQ, DM VDD/2. VSS Supply Ground. VTT Supply Termination voltage: Used for control, command, and address VDD/2. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM DQ Map DQ Map Table 6: Component-to-Module DQ Map Component Reference Number Component DQ U1 U2 U3 U4 U5 U7 U8 U9 PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 2 9 U11 0 61 228 1 1 4 1 62 233 2 3 10 2 60 227 3 0 3 3 63 234 0 10 18 0 53 219 1 9 13 1 54 224 2 11 19 2 52 218 3 8 12 3 55 225 0 18 27 0 45 210 1 17 22 1 46 215 2 19 28 2 44 209 3 16 21 3 47 216 0 26 36 0 37 201 1 25 31 1 38 206 2 27 37 2 36 200 3 24 30 3 39 207 0 CB2 45 0 CB5 159 1 CB1 40 1 CB6 164 2 CB3 46 2 CB4 158 3 CB0 39 3 CB7 165 0 34 87 0 29 150 1 33 82 1 30 155 2 35 88 2 28 149 3 32 81 3 31 156 0 42 96 0 21 141 1 41 91 1 22 146 2 43 97 2 20 140 3 40 90 3 23 147 0 50 105 0 13 132 1 49 100 1 14 137 2 51 106 2 12 131 3 48 99 3 15 138 U12 U13 U14 U16 U17 U18 U19 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM DQ Map Table 6: Component-to-Module DQ Map (Continued) Component Reference Number Component DQ U10 PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 58 114 U20 0 5 123 1 57 109 1 6 128 2 59 115 2 4 122 3 56 108 3 7 129 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram VSS RS0# DQS9 DQS9# DQS0 DQS0# DQ0 DQ1 DQ2 DQ3 DQ DQ DQ DQ DQ8 DQ9 DQ10 DQ11 DQ4 DQ5 DQ6 DQ7 U1 ZQ DQS1 DQS1# VSS DQ12 DQ13 DQ14 DQ15 ZQ VSS DQ DQ DQ DQ DQ20 DQ21 DQ22 DQ23 ZQ VSS DQ DQ DQ DQ ZQ VSS DQ DQ DQ DQ DQ40 DQ41 DQ42 DQ43 VSS DQ44 DQ45 DQ46 DQ47 ZQ VSS DQ52 DQ53 DQ54 DQ55 ZQ VSS DQ DQ DQ DQ DQ60 DQ61 DQ62 DQ63 ZQ VSS DQ DQ DQ DQ PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN SPD EEPROM/ Temperature sensor SCL EVT A0 SDA A1 A2 SA0 SA1 SA2 EVENT# ZQ VSS DQ DQ DQ DQ Command, control, address, and clock line terminations: U14 ZQ VSS DQ DQ DQ DQ RS#, RCKE, RA[14:0], RRAS#, RCAS#, RWE#, RODT, RBA[2:0] DDR3 SDRAM VTT DDR3 SDRAM U13 CK CK# VDD ZQ VSS DQ DQ DQ DQ VDDSPD U12 ZQ VSS DQ DQ DQ DQ U11 SPD EEPROM/ Temperature Sensor VDD DDR3 SDRAM VTT Control, command and address termination VREFCA DDR3 SDRAM VREFDQ DDR3 SDRAM VSS DDR3 SDRAM ZQ DQS17 DQS17# VSS DM CS# DQS DQS# CB4 CB5 CB6 CB7 U5 ZQ DQ DQ DQ DQ U16 ZQ VSS Note: U15 U17 DQS16 DQS16# DM CS# DQS DQS# CB0 CB1 CB2 CB3 ZQ DM CS# DQS DQS# U10 DQS8 DQS8# DDR3 SDRAM VSS DQ DQ DQ DQ DDR3 SDRAM U18 DQS15 DQS15# DM CS# DQS DQS# DQ56 DQ57 DQ58 DQ59 DQ DQ DQ DQ DM CS# DQS DQS# U9 DQS7 DQS7# CK CK# P L L RESET# DM CS# DQS DQS# DM CS# DQS DQS# DQ DQ U8 DQ DQ DQ DQ DQ DQ VSS DQS14 DQS14# DM CS# DQS DQS# DQ48 DQ49 DQ50 DQ51 ZQ DQS13 DQS13# DQ36 DQ37 DQ38 DQ39 ZQ DQS6 DQS6# a n d CK0 CK0# DM CS# DQS DQS# U7 DQS5 DQS5# U19 DM CS# DQS DQS# DM CS# DQS DQS# DQ32 DQ33 DQ34 DQ35 DQ DQ DQ DQ DQS12 DQS12# DQ28 DQ29 DQ30 DQ31 U4 DQS4 DQS4# VSS DQS11 DQS11# DM CS# DQS DQS# DQ24 DQ25 DQ26 DQ27 ZQ RS0#: DDR3 SDRAM RBA[2:0]: DDR3 SDRAM RA[14:0]: DDR3 SDRAM RRAS#: DDR3 SDRAM RCAS#: DDR3 SDRAM RWE#: DDR3 SDRAM RCKE0: DDR3 SDRAM RODT0: DDR3 SDRAM Err _Out # R e g i s t e r DM CS# DQS DQS# U3 DQS3 DQS3# U20 DQS10 DQS10# DM CS# DQS DQS# DQ16 DQ17 DQ18 DQ19 DQ DQ DQ DQ S0# BA[2:0] A[15:0] RAS# CAS# WE# CKE0 ODT0 Par _In DM CS# DQS DQS# DM CS# DQS DQS# DQ DQ U2 DQ DQ DQS2 DQS2# U6 DM CS# DQS DQS# DM CS# DQS DQS# VSS 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is used for the calibration of the component’s ODT and output driver. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM General Description General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM modules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. Fly-By Topology DDR3 modules use faster clock speeds than earlier DDR technologies, making signal quality more important than ever. For improved signal quality, the clock, control, command, and address buses have been routed in a fly-by topology, where each clock, control, command, and address pin on each DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3. Registering Clock Driver Operation Registered DDR3 SDRAM modules use a registering clock driver device consisting of a register and a phase-lock loop (PLL). The device complies with the JEDEC standard "Definition of the SSTE32882 Registering Clock Driver with Parity and Quad Chip Selects for DDR3 RDIMM Applications." The register section of the registering clock driver latches command and address input signals on the rising clock edge. The PLL section of the registering clock driver receives and redrives the differential clock signals (CK, CK#) to the DDR3 SDRAM devices. The register(s) and PLL reduce clock, control, command, and address signals loading by isolating DRAM from the system controller. Parity Operations The registering clock driver includes an even parity function for checking parity. The memory controller accepts a parity bit at the Par_In input and compares it with the data received on A[15:0], BA[2:0], RAS#, CAS#, and WE#. Valid parity is defined as an even number of ones (1s) across the address and command inputs (A[15:0], BA[2:0], RAS#, CAS#, and WE#) combined with Par_In. Parity errors are flagged on Err_Out#. Address and command parity is checked during all DRAM operations and during control word WRITE operations to the registering clock driver. For SDRAM operations, the address is still propagated to the SDRAM even when there is a parity error. When writing to the internal control words of the registering clock driver, the write will be ignored if parity is not valid. For this reason, systems must connect the Par_In pins on the DIMM and provide correct parity when writing to the registering clock driver control word configuration registers. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Temperature Sensor with Serial Presence-Detect EEPROM Temperature Sensor with Serial Presence-Detect EEPROM Thermal Sensor Operations The temperature from the integrated thermal sensor is monitored and converts into a digital word via the I2C bus. System designers can use the user-programmable registers to create a custom temperature-sensing solution based on system requirements. Programming and configuration details comply with JEDEC standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor." Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Modules." These bytes identify module-specific timing parameters, configuration information, and physical attributes. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to V SS, permanently disabling hardware write protection. For further information refer to Micron technical note TN-04-42, "Memory Module Serial Presence-Detect." PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 7: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V Table 8: Operating Conditions Symbol Parameter Min Nom Max Units 1.283 1.35 1.45 V 1.425 1.5 1.575 V VREFCA(DC) Input reference voltage command/ address bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V VREFDQ(DC) I/O reference voltage DQ bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V –600 – 600 mA 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V 2 – – – µA 3 VDD VDD supply voltage IVTT Termination reference current from VTT VTT Termination reference voltage (DC) – command/address bus II Input leakage current; Any input 0V ≤ VIN ≤ VDD; VREF input 0V ≤ VIN ≤ 0.95V (All other pins not under test = 0V) Address inputs, RAS#, CAS#, WE#, S#, CKE, ODT, BA, CK, CK# IOZ Output leakage current; DQ, DQS, 0V ≤ VOUT ≤ VDD; DQ DQS# and ODT are disabled; ODT is HIGH –5 0 5 µA IVREF VREF supply leakage current; VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) –18 0 18 µA Notes 1 TA Module ambient operating temperature 0 – 70 °C 4, 5 TC DDR3 SDRAM component case operating temperature 0 – 95 °C 4, 5, 6 Notes: PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 1. Module is backward-compatible with 1.5V operation. Refer to device specification for details and operation guidance. 2. VTT termination voltage in excess of the stated limit will adversely affect the command and address signals’ voltage margin and will reduce timing margins. 3. Inputs are terminated to VDD/2. Input current is dependent on terminating resistance selected in register. 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Electrical Specifications 4. TA and TC are simultaneous requirements. 5. For further information, refer to technical note TN-00-08: “Thermal Applications,” available on Micron’s Web site. 6. The refresh rate is required to double when 85°C < TC ≤ 95°C. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s web site. Module speed grades correlate with component speed grades, as shown below. Table 9: Module and Component Speed Grades DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -2G1 -093 -1G9 -107 -1G6 -125 -1G4 -15E -1G1 -187E -1G0 -187 -80C -25E -80B -25 Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM IDD Specifications IDD Specifications Table 10: DDR3 IDD Specifications and Conditions – 4GB (Die Revision D) Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) component data sheet Parameter Symbol 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 1530 1350 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD1 1800 1710 mA Precharge power-down current: Slow exit IDD2P0 216 216 mA Precharge power-down current: Fast exit IDD2P1 540 450 mA Precharge quiet standby current IDD2Q 630 540 mA Precharge standby current IDD2N 666 576 mA Precharge standby ODT current IDD2NT 810 720 mA Active power-down current IDD3P 630 540 mA Active standby current IDD3N 720 630 mA Burst read operating current IDD4R 2610 2250 mA Burst write operating current IDD4W 2790 2430 mA Refresh current IDD5B 3600 3420 mA Self refresh temperature current: MAX TC = 85°C IDD6 216 216 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 270 270 mA All banks interleaved read current IDD7 6930 6030 mA Reset current IDD8 252 252 mA PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM IDD Specifications Table 11: DDR3 IDD Specifications and Conditions – 4GB (Die Revision M) Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 1080 990 900 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD1 1350 1260 1170 mA Precharge power-down current: Slow exit IDD2P0 216 216 216 mA Precharge power-down current: Fast exit IDD2P1 594 504 414 mA Precharge quiet standby current IDD2Q 594 504 414 mA Precharge standby current IDD2N 630 540 450 mA Precharge standby ODT current IDD2NT 720 630 540 mA Active power-down current IDD3P 846 756 666 mA Active standby current IDD3N 936 846 756 mA Burst read operating current IDD4R 2250 1980 1710 mA Burst write operating current IDD4W 2070 1800 1530 mA Refresh current IDD5B 3420 3330 3240 mA Self refresh temperature current: MAX TC = 85°C IDD6 216 216 216 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 270 270 270 mA All banks interleaved read current IDD7 3960 3690 3420 mA Reset current IDD8 252 252 252 mA PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM IDD Specifications Table 12: DDR3 IDD Specifications and Conditions – 4GB (Die Revision K) Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 702 684 648 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD1 882 846 774 mA Precharge power-down current: Slow exit IDD2P0 216 216 216 mA Precharge power-down current: Fast exit IDD2P1 252 252 252 mA Precharge quiet standby current IDD2Q 360 360 360 mA Precharge standby current IDD2N 378 378 378 mA Precharge standby ODT current IDD2NT 558 522 468 mA Active power-down current IDD3P 378 378 378 mA Active standby current IDD3N 576 540 504 mA Burst read operating current IDD4R 1620 1404 1152 mA Burst write operating current IDD4W 1674 1458 1242 mA Refresh current IDD5B 3240 3222 3186 mA Self refresh temperature current: MAX TC = 85°C IDD6 216 216 216 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 270 270 270 mA All banks interleaved read current IDD7 2808 2700 2178 mA Reset current IDD8 252 252 252 mA PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Registering Clock Driver Specifications Registering Clock Driver Specifications Table 13: Registering Clock Driver Electrical Characteristics SSTE32882 devices or equivalent; Note 1 applies to entire table Parameter Symbol Pins Min Nom DC supply voltage VDD – Max Units Notes 1.283 1.35 1.45 V 1.425 1.5 1.575 V DC reference voltage VREF – 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V DC termination voltage VTT – 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V AC high-level input voltage VIH(AC) Control, command, address VREF + 175mV – VDD + 400mV V AC low-level input voltage VIL(AC) Control, command, address –0.4 – VREF - 175mV V DC high-level input voltage VIH(DC) Control, command, address VREF + 100mV – VDD + 0.4 V DC low-level input voltage VIL(DC) Control, command, address –0.4 – VREF - 100mV V High-level input voltage VIH(CMOS) RESET#, MIRROR 0.65 × VDD – VDD V Low-level input voltage VIL(CMOS) RESET#, MIRROR 0 – 0.35 × VDD V Differential input crosspoint voltage range VIX(AC) CK, CK#, FBIN, FBIN# 0.5 × VDD - 175mV 0.5 × VDD 0.5 × VDD + 175mV V Differential input voltage VID(AC) CK, CK# 350 – VDD + TBD mV High-level output current IOH Err_Out# – – TBD mA Low-level output current IOL Err_Out# TBD – TBD mA Notes: PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 2 1. Timing and switching specifications for the register listed are critical for proper operation of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for the specific device used on the module. 2. The register is backward-compatible with 1.5V operation. Refer to device specification for details and operation guidance. 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Temperature Sensor with Serial Presence-Detect EEPROM Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module's temperature and can be read back at any time over the I2C bus shared with the SPD EEPROM. Refer to JEDEC standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor." Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: Temperature Sensor with SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units VDDSPD 3.0 3.6 V Supply current: VDD = 3.3V IDD – 2.0 mA Input high voltage: Logic 1; SCL, SDA VIH VDDSPD x 0.7 VDDSPD + 1 V Input low voltage: Logic 0; SCL, SDA VIL –0.5 VDDSPD x 0.3 V Output low voltage: IOUT = 2.1mA VOL – 0.4 V Input current IIN –5.0 5.0 µA Temperature sensing range – –40 125 °C Temperature sensor accuracy (class B) – –1.0 1.0 °C Supply voltage Table 15: Temperature Sensor and SPD EEPROM Serial Interface Timing Parameter/Condition Symbol Min Max Units tBUF 4.7 – µs SDA fall time tF 20 300 ns SDA rise time tR – 1000 ns tHD:DAT 200 900 ns Time bus must be free before a new transition can start Data hold time Start condition hold time tH:STA 4.0 – µs Clock HIGH period tHIGH 4.0 50 µs Clock LOW period tLOW 4.7 – µs tSCL 10 100 kHz Data setup time tSU:DAT 250 – ns Start condition setup time tSU:STA 4.7 – µs Stop condition setup time tSU:STO 4.0 – µs SCL clock frequency PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Temperature Sensor with Serial Presence-Detect EEPROM EVENT# Pin The temperature sensor also adds the EVENT# pin (open-drain). Not used by the SPD EEPROM, EVENT# is a temperature sensor output used to flag critical events that can be set up in the sensor’s configuration register. EVENT# has three defined modes of operation: interrupt mode, compare mode, and critical temperature mode. Event thresholds are programmed in the 0x01 register using a hysteresis. The alarm window provides a comparison window, with upper and lower limits set in the alarm upper boundary register and the alarm lower boundary register, respectively. When the alarm window is enabled, EVENT# will trigger whenever the temperature is outside the MIN or MAX values set by the user. The interrupt mode enables software to reset EVENT# after a critical temperature threshold has been detected. Threshold points are set in the configuration register by the user. This mode triggers the critical temperature limit and both the MIN and MAX of the temperature window. The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by the user and returns to the logic HIGH state only when the temperature falls below the programmed thresholds. Critical temperature mode triggers EVENT# only when the temperature has exceeded the programmed critical trip point. When the critical trip point has been reached, the temperature sensor goes into comparator mode, and the critical EVENT# cannot be cleared through software. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 4GB (x72, ECC, SR) 240-Pin 1.35V DDR3 VLP RDIMM Module Dimensions Module Dimensions Figure 3: 240-Pin DDR3 RDIMM Front view 4.0 (0.157) MAX 133.50 (5.256) 133.20 (5.244) 0.75 (0.03) R (6X) U1 U2 U3 U4 U5 2.5 (0.098) D (2X) U7 U6 U8 U9 U10 9.5 (0.374) TYP 2.3 (0.091) TYP 0.76 (0.03) R Pin 1 2.2 (0.087) TYP Pin 120 1.0 (0.039) TYP 1.45 (0.057) TYP 18.9 (0.744) 18.6 (0.732) 0.8 (0.031) TYP 1.37 (0.054) 1.17 (0.046) 54.68 (2.15) TYP 123.0 (4.84) TYP Back view U15 U11 U12 U13 U14 U16 U17 U18 U19 U20 3.0 (0.118) 4X TYP 45°, 2X 3.05 (0.12) TYP Pin 240 47.0 (1.85) TYP 71.0 (2.79) TYP Notes: Pin 121 5.0 (0.197) TYP 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83aa7149 kdf18c512x72pz.pdf - Rev. G 4/13 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.