TN-12-16: Comparing N25Q and SST26WF Flash Devices Introduction Technical Note Comparing Micron N25Q and SST SST26WF Flash Devices Introduction The purpose of this technical note is to compare features of the Micron® N25Q (32Mb or 64Mb) and SST SST26WF Flash memory devices. Features compared include memory architecture, package options, signal descriptions, command sets, electrical specifications, and device identification. PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind. TN-12-16: Comparing N25Q and SST26WF Flash Devices Memory Array Architecture Memory Array Architecture N25Q Features SST26WF Features Program 1 to 256 bytes Program 1 to 256 bytes Uniform sector erase (64KB) Uniform 4KB sectors Uniform subsector erase (4KB) Four 8KB top and bottom parameter overlay blocks Two 32KB top and bottom overlay blocks Uniform 64KB overlay blocks Package Configurations Table 1: Package Configurations N25Q Package SST26WF 32Mb 64Mb 32Mb 64Mb VDFPN8 (8mm x 6mm MLP8) Yes Yes – N/A TBGA24 (6mm x 8mm) Yes Yes – N/A VFDFPN8 (6mm x 5mm MLP) Yes Yes Yes N/A SO16 (300 mils body width) Yes Yes – N/A SO8W (SO8 208 mils body width) Yes Yes Yes N/A UFDFPN8 (4mm x 3mm MLP) Yes – – N/A SO8N (SO8 150 mils body width) Yes – – N/A Signal Descriptions Table 2: Signal Descriptions N25Q Signal SST26WF Signal Type Description Serial clock C SCK Input DQ0 SIO[0] Input or I/O DQ1 SIO[0] Output or I/O S# CE# Input W/VPP/DQ2 SIO[2] Input or I/O Write protect/enhanced program supply voltage/additional data I/O HOLD#/DQ3 SIO[3] Input or I/O HOLD or I/O VCC VDD Power VSS VSS Ground Notes: Serial data input or I/O Serial data output or I/O Chip select Supply voltage Ground 1. During quad I/O operation, the SST26WF must submit ENABLE QUAD I/O command for quad I/O functionality. 2. During quad I/O operation, N25Q must set a bit (VCR or NVCR) for quad I/O functionality; during that time, the W and HOLD signals are functional. The W and HOLD signals lose functionality only when quad I/O operations are in progress (QUAD OUTPUT FAST READ, QUAD I/O FAST READ, and QUAD INPUT FAST PROGRAM). PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Commands Commands Table 3: Supported Command Set Command Code (Setup/Confirm) N25Q Command Name Command Code (Setup/Confirm) SST26WF Notes READ READ 03h 03h FAST READ 0Bh 0Bh DUAL OUTPUT FAST READ 3Bh N/A 1 DUAL INPUT/OUTPUT FAST READ BB N/A 1 QUAD OUTPUT FAST READ 6Bh N/A 1 QUAD INPUT/OUTPUT FAST READ EBh N/A 1 9Fh/9Eh 9Fh 2 PAGE PROGRAM 02h 02h DUAL INPUT FAST PROGRAM A2h N/A 1 QUAD INPUT FAST PROGRAM 32h N/A 1 READ DEVICE ID PROGRAM ERASE BULK ERASE C7h C7h SECTOR ERASE – 64KB D8h D8h SUBSECTOR ERASE – 4KB 20h 20h PROGRAM/ERASE SUSPEND 75h B0h PROGRAM/ERASE RESUME 7Ah 30h DEEP POWER-DOWN B9h N/A 1, 3, 4 RELEASE FROM DEEP POWER-DOWN ABh N/A 1, 3, 4, 5 SUSPEND DEEP POWER-DOWN Notes: 1. 2. 3. 4. Not supported on the SST26WF. 9Eh not supported on the SST26WF. Only available on the 1.8V N25Q, not on the 3V N25Q. Commands are used to place the N25Q device in low power consumption mode, but are not supported on the SST26WF. 5. The ABh command in the N25Q family is available, but means RELEASE FROM DEEP POWER-DOWN (for 1.8V products). READ Commands The READ command set for the N25Q and SST26WF devices is identical, and each device follows the standard three address byte protocol. The SST26WF has a fixed dummy cycle read, but the N25Q dummy cycles can be configured and controlled in the nonvolatile configuration register (NVCR), bits 12 to 15, or in the volatile configuration register (VCR), bits 7 to 4. PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Commands The SST26WF and N25Q manufacturer ID, memory type, and memory capacity can be read out by issuing a 9Fh command. N25Q will output the same data when the 9Eh command is issued; the SST26WF does not support the 9Eh command. PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Electrical Characteristics Electrical Characteristics Table 4: DC Current Characteristics N25Q Parameter SST26WF Symbol Min Max Min Max Units Standby current ICC1 – 100 – 25 µA Operating current (FAST READ QUAD I/O) ICC3 – 20 – 18 mA Operating current (PAGE PROGRAM) ICC4 – 20 – 26 mA Operating current (ERASE) ICC6 – 20 – 25 mA Min Max Units Table 5: DC Voltage Specifications N25Q Parameter Symbol Min SST26WF Max Input low voltage VIL –0.5 0.3 VCC – 0.3 V Input high voltage VIH 0.7 VCC VCC + 0.4 0.7 VDD – V Output low voltage VOL – 0.4 - 0.2 V Output high voltage VOH VCC - 0.2 – VDD - 0.2 – V PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices AC Characteristics AC Characteristics Table 6: AC Specifications N25Q SST26WF Symbol Alternate Symbol Min Max Min Max Units Clock frequency (x1 FAST READ) fC fC – 108 – 25 MHz Clock frequency (x2, x4 FAST READ) fC fC – 108 – 80 MHz Clock frequency (READ) fR fR – 54 – 40 MHz S# active setup time tSLCH tCSS 4 – 6 – ns Data-in setup time tDVCH tSU 2 – 5 – ns Data-in hold time tCHDX tDH 3 – 5 – ns S# deselect time after correct READ (ARRAY READ to ARRAY READ) tSHSL tCSH 20 – 15 – ns S# deselect time after incorrect READ or different instruction (ERASE/PROGRAM to READ) tSHSL tCSH 50 – 50 – ns Output disable time (2.7–3.6V) tSHQZ tDIS – 8 – 10 ns Clock low to output valid (30pF) tCLQV tV – 7 – 15 ns Output hold time tCLQX tHO 1 – 2 – ns HOLD to output Low-Z tHHQX tLZ – 8 N/A N/A ns HOLD to output High-Z tHLQZ tHZ – 8 N/A N/A ns Parameter Note: 1. AC specifications compare the fastest versions available at the full voltage range (2.7– 3.6V) Program and Erase Specifications Table 7: Program and Erase Specifications N25Q SST26WF 32Mb 64Mb 32Mb Operation Typ Max Typ Max PAGE PROGRAM 0.5 5 0.5 5 SUBSECTOR ERASE 0.3 3 0.3 3 SECTOR ERASE 0.7 3 0.7 3 BULK ERASE 30 60 60 120 PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 6 Typ 64Mb Max Typ Max Unit 1.5 – N/A N/A ms N/A N/A N/A N/A s 0.25 2 N/A N/A s 0.5 256 N/A N/A s Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Configuration and Memory Map Configuration and Memory Map Table 8: Sectors and Subsectors by Density Density 64 32 Sector Subsector 127 2047 Address Range 7FFFFFh 7FF000h : : : 2032 7F0FFFh 7F0000h : : : : 63 1023 3FFFFFh 3FF000h : : : 1008 3F0FFFh 3F0000h : : : : 0 15 0FFFFh 0F000h : : : 4 04FFFh 04000h 3 03FFFh 03000h 2 02FFFh 02000h 1 01FFFh 01000h 0 00FFFh 00000h Device Identification Manufacturer identification is assigned by JEDEC. As a result, the N25Q and SST26WF devices have a different manufacturer ID and memory type codes. The memory capacity code is different because the SST26WF does not offer a 128Mb serial Flash device. Command 9Fh is used to read these codes in both devices. N25Q has a unique ID (UID) composed of 17 read-only bytes, which contain the following data: • The first byte is set to 10h. • The next two bytes of extended device ID specify device configuration (top, bottom, or uniform architecture and hold or reset functionality). • The next 14 bytes contain optional customized factory data. The customized factory data bytes are factory programmed. Refer to the N25Q data sheet for more information. Table 9: Read Identification Summary PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN Parameter N25Q Code SST26WF Code Manufacturer ID 20h BFh Memory type BAh 26h1 Device ID N/A 22h 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Conclusion Table 9: Read Identification Summary (Continued) Note: Parameter N25Q Code SST26WF Code Memory capacity 16h (32Mb), 17h (64Mb) N/A 1. For 32Mb serial Flash device only. Conclusion Comparing the features of the Micron N25Q and SST SST26WF Flash memory devices enables users to migrate applications from the SST26WF to the N25Q. PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-16: Comparing N25Q and SST26WF Flash Devices Revision History Revision History Rev. A – 10/10 • Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef8427ef49 tn1216_comparing_n25q_and_sst26WF.pdf - Rev. A 10/10 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.