TN-12-13: Comparing N25Q and M25PX Flash Devices Introduction Technical Note Comparing Micron N25Q and M25PX Flash Devices Introduction The purpose of this technical note is to compare features of the Micron® N25Q serialFlash family and M25PX Flash memory devices. Features compared include memory architecture, package options, signal descriptions, command sets, electrical specifications, and device identification. PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind. TN-12-13: Comparing N25Q and M25PX Flash Devices Memory Array Architecture Memory Array Architecture N25Q Features M25PX Features Program 1 to 256 bytes Program 1 to 256 bytes Uniform sector erase (64KB) Uniform sector erase (64KB) Uniform subsector erase (4KB) Uniform subsector erase (4KB) Package Configurations Table 1: Package Configurations N25Q Package M25PX 32Mb 64Mb 32Mb 64Mb VDFPN8 (8mm x 6mm MLP8) Yes Yes Yes Yes TBGA24 (6mm x 8mm) Yes Yes Yes Yes VFDFPN8 (6mm x 5mm MLP) Yes Yes Yes – SO16 (300 mils body width) Yes Yes Yes Yes SO8W (SO8 208 mils body width) Yes Yes Yes – UFDFPN8 (4mm x 3mm MLP) Yes – – – SO8N (SO8 150 mils body width) Yes – – – Note: 1. The M25PX does not have package options for 128Mb or 256Mb devices. Refer to the N25Q data sheet for N25Q package options in 128Mb and 256Mb devices. Signal Descriptions Table 2: Signal Descriptions N25Q Signal M25PX Signal Type Description C C Input Serial clock DQ0 DQ0 Input or I/O DQ1 DQ1 Output or I/O S# S# Input W/VPP/DQ2 W/VPP Input or I/O Write protect/enhanced program supply voltage or I/O HOLD#/DQ3 HOLD# Input or I/O HOLD or I/O VCC VCC Input Supply voltage VSS VSS Input Ground Note: Serial data input or I/O Serial data output or I/O Chip select 1. M25PX does not support quad I/O functionality. PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices Commands Commands Table 3: Supported Command Set Command Code (Setup/Confirm) N25Q Command Name Command Code (Setup/Confirm) M25PX Notes READ READ 03h 03h FAST READ 0Bh 0Bh DUAL OUTPUT FAST READ 3Bh 3Bh DUAL INPUT/OUTPUT FAST READ BBh N/A 1 QUAD OUTPUT FAST READ 6Bh N/A 1 QUAD INPUT/OUTPUT FAST READ EBh N/A 1 9Fh/9Eh 9Fh/9Eh READ DEVICE ID PROGRAM PAGE PROGRAM 02h 02h DUAL INPUT FAST PROGRAM A2h A2h QUAD INPUT FAST PROGRAM 32h N/A 1 ERASE BULK ERASE C7h C7h SECTOR ERASE – 64KB D8h D8h SUBSECTOR ERASE – 4KB 20h 20h PROGRAM/ERASE SUSPEND 75h N/A 1 PROGRAM/ERASE RESUME 7Ah N/A 1 DEEP POWER-DOWN B9h B9h 2 RELEASE FROM DEEP POWER-DOWN ABh ABh 2 SUSPEND DEEP POWER-DOWN Notes: 1. Not supported on the M25PX. 2. The deep power-down mode for the N25Q is available only in the 1.8V device. READ Commands The READ command set for the N25Q and M25PX devices is identical, and each device follows the standard three address byte protocol. The M25PX does not support any I/O reads or any quad read commands. PROGRAM Commands The M25PX does not support quad input fast programming. The N25Q requires VECR or NVCR to enable quad I/O functionality. With NVCR set (bit 3 = 0), the device can be powered up or down with quad I/O functionality. PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices Electrical Characteristics Electrical Characteristics Table 4: DC Current Specifications N25Q Parameter M25PX Symbol Min Max Min Max Units Standby current ICC1 – 100 – 50 µA Operating current (FAST READ, DUAL I/O, or QUAD I/O) ICC3 – 20 – 15 mA Operating current (PAGE PROGRAM) ICC4 – 20 – 15 mA Operating current (WRITE STATUS REGISTER) ICC5 – 20 – 15 mA Operating current (ERASE) ICC6 – 20 – 15 mA Table 5: DC Voltage Specifications N25Q Parameter M25PX Symbol Min Max Min Max Units Input low voltage VIL –0.5 0.3 VCC –0.5 0.3 VCC V Input high voltage VIH 0.7 VCC VCC + 0.4 0.7 VCC VCC + 0.4 V Output low voltage VOL – 0.4 – 0.4 V Output high voltage VOH VCC - 0.2 – VCC - 0.2 – V PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices AC Characteristics AC Characteristics Table 6: AC Specifications N25Q M25PX Symbol Alternate Symbol Min Max Min Max Units Clock frequency (FAST READ) fC fC – 108 – 75 MHz Clock frequency (READ) fR fR – 54 – 33 MHz S# active setup time tSLCH tCSS 4 – 5 – ns Data-in setup time tDVCH tDSU 2 – 2 – ns Data-in hold time tCHDX tDH 3 – 5 – ns S# deselect time after correct READ (ARRAY READ to ARRAY READ) tSHSL tCSH 20 – 80 – ns S# deselect time after incorrect READ or different instruction (ERASE/PROGRAM to READ) tSHSL tCSH 50 – 80 – ns Output disable time (2.7–3.6V) tSHQZ tDIS – 8 – 8 ns Clock low to output valid (30pF) tCLQV tV – 7 – 8 ns Output hold time tCLQX tHO 1 – 0 – ns HOLD to output Low-Z tHHQX tLZ – 8 – 8 ns HOLD to output High-Z tHLQZ tHZ – 8 – 8 ns Parameter Note: 1. AC specifications compare the fastest versions available at the full voltage range (2.7– 3.6V). Program and Erase Specifications Table 7: Program and Erase Specifications N25Q M25PX Operation Typ Max Typ Max Unit PAGE PROGRAM (256 bytes) 0.5 5 0.8 5 ms SUBSECTOR ERASE (4KB) 0.3 3 0.07 0.15 s SECTOR ERASE (64KB) 0.7 3 0.7 3 s BULK ERASE (128Mb) 170 250 N/A N/A s BULK ERASE (64Mb) 60 120 68 160 s BULK ERASE (32Mb) 30 60 34 80 s BULK ERASE (16Mb) N/A N/A 15 80 s BULK ERASE (8Mb) N/A N/A 8 80 s PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices Configuration and Memory Map Configuration and Memory Map Table 8: Sectors and Subsectors by Density Density 64 32 Sector Subsector 127 2047 Address Range 7FFFFFh 7FF000h : : : 2032 7F0FFFh 7F0000h : : : : 63 1023 3FFFFFh 3FF000h : : : 1008 3F0FFFh 3F0000h : : : : 0 15 0FFFFh 0F000h : : : 4 04FFFh 04000h 3 03FFFh 03000h 2 02FFFh 02000h 1 01FFFh 01000h 0 00FFFh 00000h Device Identification Manufacturer identification is assigned by JEDEC. As a result, the N25Q and M25PX devices have the same manufacturer ID, but different memory type codes. The memory capacity code varies by density. Command 9Fh is used to read these codes in both devices. Table 9: Read Identification Summary Parameter N25Q Code M25PX Code Manufacturer ID 20h 20h Memory type BAh 71h Memory capacity (128Mb) 18h N/A Memory capacity (64Mb) 17h 17h Memory capacity (32Mb) 16h 16h Memory capacity (16Mb) N/A 15h Memory capacity (8Mb) N/A 14h PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices Part Number Cross-Reference Table 10: UID UID EDID + CDF length N25Q 10h M25PX 10h EDID CFD 2 bytes 14 bytes (factory programmed) 16 bytes (factory programmed with customer requests) Refer to the N25Q data sheet for more information about UID, EDID, and CFD. Part Number Cross-Reference N25Q Part Number M25PX Part Number Notes N25Q032A13ESF40G M25PX32-VMF6E N25Q032A13ESF40F M25PX32-VMF6F N25Q032A13EF640E M25PX32-VMP6E N25Q032A13EF640F M25PX32-VMP6F N25Q032A13ESE40G M25PX32-VMW6E N25Q032A13ESE40F M25PX32-VMW6F N25Q032A13E1241E M25PX32-VZM6E N25Q032A13E1241F M25PX32-VZM6F N25Q032A13ESC40 N/A SO8N is availble only on N25Q032 N25Q032A13EF440 N/A MLP 4 x 3 available only on N25Q032 N25Q064A13ESF40G M25PX64S-VMF6P N25Q064A13ESF40F M25PX64S-VMF6TP N25Q064A13EF840E M25PX64-VMD6G Check data sheet package dimension N25Q064A13EF840F M25PX64-VMD6TG Check data sheet package dimension N25Q064A13EF840E M25PX64-VME6G N25Q064A13EF840F M25PX64-VME6TG N25Q064A13ESF40G M25PX64-VMF6P N25Q064A13ESF40F M25PX64-VMF6TP N25Q064A13E1241E M25PX64-VZM6P N25Q064A13E1241F M25PX64-VZM6TP N25Q064A13ESE40 N/A SO8W is availble only on N25Q064 N25Q064A13EF640 N/A MLP 6 x 5 is availble only on N25Q064 Conclusion Comparing the features of the Micron N25Q and M25PX Flash memory devices enables users to migrate applications from the M25PX to the N25Q. PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. TN-12-13: Comparing N25Q and M25PX Flash Devices Revision History Revision History Rev. C – 6/12 • Updated M25PX SUBSECTOR ERASE values (TYP and Max) and BULK ERASE descriptions in Table 7, Program and Erase Specifications Rev. B – 11/10 • Added 32Mb, 64Mb, 128Mb, and 256Mb information Rev. A – 2/10 • Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef843d9ccf tn1213_comparing_n25q_and_m25px.pdf - Rev. C 6/12 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.