Product Data Sheet FAT801-S - 801 Series Amber Applicable for automotive interior light 801 Series Amber FAT801-S / STA0A12AO RoHS AEC-Q101 Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size: 3.5x2.8x1.9mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • • • • • • • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • Key Applications • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability. Rev3.0, Aug 26, 2015 White PLCC2 Amber Color ESD min 2kV MSL 2a Level Viewing angle 120℃ AEC-Q101 Qualified RoHS compliant 1 Interior automotive Electronic sign and signals Electrical Equipment, Home appliance www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 5 • Color Bin Structure 9 • Reliability Test 10 • Mechanical Dimensions 11 • Material Structure 12 • Recommended Solder Pad 13 • Reflow Soldering Characteristics 14 • Emitter Tape & Reel Packaging 15 • Product Nomenclature 17 • Handling of Silicone Resin for LEDs 18 • Precaution For Use 19 • Company Information 22 Rev3.0, Aug 26, 2015 2 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Performance Characteristics Table 1. Electro Optical Characteristics, IF = 20mA, Tj = 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. 1.7 2.2 2.5 V 10 uA 320 mcd Forward Voltage [1] VF Reverse Current IR (VR=5V) Luminous Intensity [2] [1] IV Luminous Flux ΦV 840 mlm Peak Wavelength Wp 612 nm Dominant Wavelength [1] Wd 120 600 280 608 612 nm 2θ1/2 120 deg. Optical Efficiency ηop 19.1 lm/W Spectral Bandwidth 50% 14 nm Rth JA 360 ℃/W Rth JS 180 ℃/W Temperature coefficient of VF -10℃ ≤ T ≤ 100 ℃ TCv -1.05 mV/℃ Temperature coefficient of W d -10℃ ≤ T ≤ 100 ℃ TCwd 0.05 nm/℃ Luminous Intensity Phi V / IV ∂Ω Viewing Angle [3] Thermal resistance [4] 3.0 3.1 lm/cd Notes : (1) Tolerance : VF :±0.1V, IV :±10%, W d :±0.5nm (2) The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. (3) Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity (4) Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point Pad design for improved heat dissipation : Cu-area > Cu 16mm2 per pad, FR4, t=1.6mm (5) Not designed for reverse operation Rev3.0, Aug 26, 2015 3 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Performance Characteristics Table 2. Absolute Maximum Ratings Parameter Symbol Value Unit Power Dissipation (Ta=25℃) Pd 75 mW Forward Current (Ta=25℃) IF 30 mA Peak Forward Current (t≤ 10μsec,D≤5/1000,Ta=25℃) IFM 100 mA Operating Temperature Topr -40 ~ +110 ℃ Storage Temperature Tstg -40 ~ +110 ℃ Junction Temperature Tj 125 ℃ Soldering Temperature Tsld Reflow Soldering : 260 ℃ for 10sec. Hand Soldering : 315 ℃ for 4sec. ESD (R=1.5kΩ, C= 100pF) [1] Min 2 kV Notes : • • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. All measurements were made under the standardized environment of Seoul Semiconductor. Rev3.0, Aug 26, 2015 4 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Characteristics Graph Fig 1. Color Spectrum, IF = 20mA, Tj = 25ºC, RH30% Relative Emission Intensity Relative intensity 1.0 0.8 0.6 0.4 0.2 0.0 300 400 500 600 700 800 Wavelength [nm] Dominant wavelength (nm) Fig 2. Viewing Angle Distribution, IF = 20mA 0 1.01.0 30 0.80.8 0.60.6 60 0.40.4 0.20.2 0.00.0 -90 90 -60 0 -30 0.2 0.4 0.6 0.8 Rev3.0, Aug 26, 2015 1.0 5 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, T j = 25ºC 30 Forward Current [mA] 25 20 15 10 5 0 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC 1.2 1.0 0.8 V intensity Relative luminous I 1.4 0.6 0.4 ▷ 0.2 0.0 0 △IV = IV / IV(20mA) Rev3.0, Aug 26, 2015 5 10 15 20 25 30 Forward Current [mA] Forward current (mA) 6 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Characteristics Graph Fig 5. Relative Light Output vs. Junction Temperature, IF = 20mA 1.15 1.10 IV 1.05 1.00 ▷ 0.95 0.90 0.85 -40 -20 0 △IV = IV / IV(25℃) 20 40 60 80 100 Junction Temperature [℃] Fig 6. Junction Temperature vs. Forward Voltage shift, IF = 20mA 0.10 0.05 VF 0.00 -0.05 ▷ -0.10 -0.15 -0.20 -40 △VF = VF - VF(25℃) Rev3.0, Aug 26, 2015 -20 0 20 40 60 80 100 Junction Temperature [℃] 7 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Characteristics Graph Fig 7. Maximum Forward Current vs. Temperature Forward Current IF [mA] Forward Current IF [mA] 30 Rth(j-a)_200 Rth(j-a)_250 Rth(j-a)_300 Rth(j-a)_350 20 10 0 -40 -20 0 20 40 60 80 100 120 o Ambient AmbientTemperature TemperatureTa[℃] Ta [ C] Rev3.0, Aug 26, 2015 8 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Color Bin Structure Table 3. Bin Code description, IF = 20mA, Tj = 25ºC Part Number Rank Name Forward Voltage (V) Bin Code Min. Max. A N 120 180 B O 180 240 C P 240 320 D N 120 180 O 180 240 F P 240 320 G N 120 180 H O 180 240 I P 240 320 Min. FAT801-S Luminous Intensity (mcd) E 1.7 Max. 2.5 Dominant Wavelength (nm) Bin Code Min. Max. 1 600 604 2 604 608 3 608 612 Available ranks *Notes : (1) All measurements were made under the standardized environment of Seoul Semiconductor In order to ensure availability, single color rank will not be orderable. Rev3.0, Aug 26, 2015 9 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Reliability Test Test Item Standard Test Method Test Condition Duration / Cycle Number Of Test External Visual JESD22 B-101 Visual inspection - 77 D.P.A AEC-Q101-004 Random Sample H3TRB,HAST,TC - 5 Vibration JESD22 B-103 0.06 inch displacement, 20 to 100 Hz, 50 g 100 Hz to 2kHz, 4 times 30 ESD JESD22 A-114 Human-body mode, R=1.5㏀, C = 100pF 3 times Negative/ Positive 30 Physical Dimension JESD22 B-100 Verify physical dimensions against device mechanical drawing 3 times 30 Mechanical Shock JESD22 B-104 1500 g's for 0.5 ms, 5 blows, 3 orientations 3 times 30 Parametric Verification JESD22 A-108 25℃, 1000 hours @30mA 1000hrs 77 Temperature cycling JESD22 A-104 Tc= -40°∼100°C, 30 min. dwell, 5 min transfer, 1000 cycles 1000hrs 77 Power Temperature Cycle JESD22 A-105 Ta=-40℃~85℃, If =30mA, 20 min dwell / 20 min transition (1 hour cycle), 2 min ON / 2 min OFF 1000hrs 77 High Humidity High Temp. Operating Life JESD22 A-101 85℃/85% RH, @ 30mA 1000hrs 77 High Temperature Operating Life JESD22 A-108C Ta= 100°C, If =20mA 1000hrs 77 Low Temperature Operating Life JESD22 A-108C Ta= -40°C, If = 30mA 1000hrs 77 Low Temperature Storage Life JESD22 A-119 Ta=-40°C, non-operating 1000hrs 77 High Temperature Storage Life JESD22 A-103B Ta=100°C, non-operating 1000hrs 77 Thermal Shock JESD22 A-104 -40°C ~ 100°C, 20 min. dwell, <10 second transfer, 1000 cycles 1000hrs 77 Criteria for Judging the Damage Criteria for Judgment Item Symbol Condition MIN MAX Forward Voltage VF IF =20mA - Initial × 1.2 Luminous Intensity IV IF =20mA Initial × 0.8 - Rev3.0, Aug 26, 2015 10 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Mechanical Dimensions Top View 1.65 2.40 3.20 3.50 2.80 2.20 C0.8 Cathode mark (-) Side View Circuit 1.9 1.50 0.80 0.85 0.50 0.15 (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm Rev3.0, Aug 26, 2015 11 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Material Structure ③ ④ ② ⑤ ① Parts No. Name Description Materials ① LEAD FRAME Metal Copper Alloy (Ag Plated) ② Chip Source Amber LED AlInGaP ③ Wire Metal Gold Wire ④ Encapsulation Silicone ⑤ Body PPA Rev3.0, Aug 26, 2015 12 Heat-resistant Polymer www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Recommended Solder Pad Recommended Solder Pad Paddesign for improved heat dissipation + Heat pad Cu-area > 16mm2 Solder resist Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev3.0, Aug 26, 2015 13 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev3.0, Aug 26, 2015 14 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Emitter Tape & Reel Packaging Package Marking 1.55 ± 0.05 1.75±0.1 2.0±0.05 4.0±0.1 0.22±0.05 3.83±0.1 5° 3.5±0.1 8±0.1 Cathode 1.0±0.1 8° 3.1±0.1 2.22±0.1 11.4 ± 0.1 180 +0 -3 2.0 9.0 ± 0.3 LABLE ± 0.2 30° 10 60 13 ±0.2 22 ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : Max 2,000pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev3.0, Aug 26, 2015 15 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev3.0, Aug 26, 2015 16 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Product Nomenclature Table 4. Part Numbering System : X1X2X3X4X5X6-X7 Part Number Code Description Part Number Value X1 Company F SSC Code X2 Color A Amber X3 Package Type T TOP VIEW X4X5X6 Package series 801 801 series X7 Encapsulating type S Silicone Molded Table 5. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev3.0, Aug 26, 2015 Lot Number 17 Value www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev3.0, Aug 26, 2015 18 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. Rev3.0, Aug 26, 2015 19 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Precaution for Use (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) Attaching LEDs, do not use adhesives that outgas organic vapor. (15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (16) Similar to most Solid state devices; LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev3.0, Aug 26, 2015 20 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires - This damage usually appears due to the thermal stress produced during the EOS event c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev3.0, Aug 26, 2015 21 www.seoulsemicon.com Product Data Sheet FAT801-S - 801 Series Amber Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev3.0, Aug 26, 2015 22 www.seoulsemicon.com