RENESAS HVD399C

HVD399C
Variable Capacitance Diode for VCO
REJ03G0051-0100Z
Rev.1.00
Jul.10.2003
Features
• High capacitance ratio. (n = 2.30 to 2.46)
• Low series resistance. (rs = 0.40 Ω max)
• Super small Flat Package (SFP) is suitable for surface mount design..
Ordering Information
Type No.
Laser Mark
Package Code
HVD399C
A3
SFP
Pin Arrangement
Cathode mark
Mark
1
A3
2
1. Cathode
2. Anode
Rev.1.00, Jul.10.2003, page 1 of 4
HVD399C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR1
—
—
10
nA
VR = 10 V
IR2
—
—
50
Capacitance
C0.5
18.5
—
20.0
C2.5
7.3
—
8.6
Capacitance ratio
n
2.30
—
Series resistance
rs
—
—
VR = 10 V, Ta = 60°C
pF
VR = 0.5 V, f = 1 MHz
2.46
—
C0.5/C2.5
0.4
Ω
VR = 1 V, f = 470 MHz
VR = 2.5 V, f = 1 MHz
Notes: 1. Please do not use the soldering iron due to avoid high stress to the SFP package.
2. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is
considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00, Jul.10.2003, page 2 of 4
HVD399C
Main Characteristic
10–9
30
f = 1MHz
10–10
Capacitance C (pF)
Reverse current IR (A)
25
10–11
20
15
10
–12
10
5
10–13
0
0
5
10
15
0
1
2
3
4
5
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Fig.2 Capacitance vs. Reverse voltage
0.30
0
f = 470MHz
LF = ∆(LogC)/∆(LogVR)
Series resistance rS (Ω)
–0.2
0.25
0.20
–0.4
–0.6
–0.8
0.15
0
1
2
3
4
5
6
–1.0
0
1
2
3
4
5
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 Linearity factor vs. Reverse voltage
Rev.1.00, Jul.10.2003, page 3 of 4
HVD399C
Package Dimensions
As of January, 2003
1.0 ± 0.10
0.13 ± 0.05
1.4 ± 0.10
0.5 – 0.55
0.3 ± 0.05
0.6 ± 0.05
Unit: mm
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Jul.10.2003, page 4 of 4
SFP
—
—
0.0010 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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