Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm • Microwave Radio Gain: 14 dB • Test Instrumentation Output IP3: +27 dBm • Military & Space Supply Voltage: +5V @ 64 mA • Fiber Optic Systems 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm General Description Functional Diagram The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vcc1= Vcc2= 5V Parameter Min. Frequency Range Gain 11 Gain Flatness Max. Min. 14.0 10 Typ. Max. Units 12 - 18 GHz 13 dB ±1.0 ±1.0 dB 0.021 0.25 dB/ °C Noise Figure 4.5 6.5 dB Input Return Loss 20 22 dB Gain Variation Over Temperature Output Return Loss Output Power for 1 dB Compression (P1dB) 15 12 15 10 15 dB 13 dBm Saturated Output Power (Psat) 18 15 dBm Output Third Order Intercept (IP3) 27 22 dBm -140 -140 dBc/Hz Phase Noise @ 100 Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 1 - 102 Typ. 2 - 12 64 95 64 95 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Gain & Return Loss 1 Gain vs. Temperature 18 16 14 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -10 12 10 8 6 +25C +85C -55C 4 -20 2 0 -30 0 2 4 6 8 10 12 14 16 18 20 2 22 4 6 Input Return Loss vs. Temperature 12 14 16 18 0 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 -5 +25C +85C -55C -10 -15 -20 -25 -30 +25C +85C -55C -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 2 4 6 FREQUENCY (GHz) 8 10 14 16 18 16 18 Noise Figure vs. Temperature 14 20 12 +25C +85C -55C NOISE FIGURE (dB) 15 10 5 0 -5 -15 12 FREQUENCY (GHz) Power Compression Pout (dBm), Gain (dB), PAE (%) 8 FREQUENCY (GHz) FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP 20 20 Output Power Gain PAE 10 8 6 4 2 0 -10 -5 0 Pin (dBm) 5 10 2 4 6 8 10 12 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 103 HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Psat vs. Temperature 20 25 18 23 16 21 14 19 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 10 8 +25C +85C -55C 6 4 17 15 13 11 +25C +85C -55C 9 7 2 5 0 2 4 6 8 10 12 14 16 2 18 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 FREQUENCY (GHz) Phase Noise @ 12 GHz Output IP3 vs. Temperature 35 0 -20 PHASE NOISE (dBc/Hz) 30 25 IP3 (dBm) LOW NOISE AMPLIFIERS - CHIP 1 20 -40 -60 -80 -100 +25C +85C -55C 15 -120 -140 10 -160 5 2 4 6 8 10 12 14 16 18 -180 1 10 2 10 FREQUENCY (GHz) 0 0 -20 -20 PHASE NOISE (dBc/Hz) PHASE NOISE (dBc/Hz) 5 10 5 10 10 6 Phase Noise at Psat @ 12 GHz -40 -60 -80 -100 -40 -60 -80 -100 -120 -120 -140 -140 -160 -160 2 10 3 10 4 10 FREQUENCY (Hz) 1 - 104 4 10 FREQUENCY (Hz) Phase Noise at P1dB @ 12 GHz -180 1 10 3 10 5 10 6 10 -180 1 10 2 10 3 10 4 10 10 FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Vdd1= Vdd2= 5V 7V RF Input Power (RFIN) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 14.6 mW/°C above 85 °C) 1.32 W Thermal Resistance (channel to die bottom) 68.37 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vcc1= Vcc2 (V) Icc1 + Icc2 (mA) +4.5 53 +5.0 64 +5.5 74 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP Typical Supply Current vs. Vcc1, Vcc2 Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 105 HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 1 - 106 Pad Descriptions Pad Number Function Description 1 RFIN This Pad is AC coupled and matched to 50 Ohms. 2, 4 Vcc1, Vcc2 Vcc1= Vcc2= 5V 3 RFOUT This Pad is AC coupled and matched to 50 Ohms. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane LOW NOISE AMPLIFIERS - CHIP 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 107