Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 1/9 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -16A RDSON(MAX) 230mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTBB0P10J3 G D S G：Gate D：Drain S：Source Ordering Information Device MTBB0P10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBB0P10J3 CYStek Product Specification Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-12A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR -100 ±20 -16 -11 -64 -12 9.6 5 50 20 -55~+150 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 110 Unit °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) *1 RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTBB0P10J3 Min. Typ. Max. -100 -1 -10 - 182 207 7 -3 ±100 -1 -25 230 260 - - 31 6.3 4.5 12 50 36 35 - Unit Test Conditions S VGS=0, ID=-250μA VDS =VGS, ID=-250μA VGS=±20, VDS=0 VDS =-80V, VGS =0 VDS =-70V, VGS =0, TJ=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-10A VGS =-4.5V, ID=-10A VDS =-5V, ID=-10A nC ID=-10A, VDS=-80V, VGS=-10V ns VDS=-10V, ID=-1A, VGS=-10V, RG=6Ω V nA μA A mΩ CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 1361 46 28 - - 70 420 -16 -64 -1.3 - pF Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 3/9 VGS=0V, VDS=-25V, f=1MHz A V ns nC IF=IS, VGS=0V IF=-5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTBB0P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 140 18 10V 8V 7V 6V 4.5V -ID, Drain Current(A) 16 14 12 -BVDSS, Drain-Source Breakdown Voltage (V) 20 -VGS=4V 10 -VGS=3.5V 8 6 4 -VGS=3V 130 120 110 100 ID=-250μA, VGS=0V 90 2 80 0 0 -60 8 2 4 6 -VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current 20 60 100 140 Tj, Junction Temperature(°C) 180 Reverse Drain Current vs Source-Drain Voltage 1000 -VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance-RDS(on)(mΩ) 1.2 VGS=-4.5V VGS=-10V 100 0.001 VGS=0V Tj=25°C 1 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 400 900 360 Static Drain-Source On-State Resistance-RDS(ON)(mΩ) 1000 800 700 600 500 400 300 5 10 15 -IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(ON), Static Drain-Source OnState Resistance(mΩ) -20 ID=-10A 320 280 240 200 160 VGS=-10V, ID=-10A 120 80 200 40 100 0 MTBB0P10J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.4 -VGS(th), Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 100 C oss Crss ID=-250uA 2 1.8 1.6 1.4 1.2 1 10 0.1 2.2 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) 140 180 VDS=-20V 1ms 10ms 100ms 1 100 12 10μs 100μs 10 60 Gate Charge Characteristics Maximum Safe Operating Area 100 20 Junction Temperature-Tj(°C) DC Operation in this area is limited by RDS(ON) 0.1 10 VDS=-50V 8 VDS=-80V 6 4 2 ID=-10A 0 0.01 1 10 -VDS, Drain-Source Voltage(V) 100 0 5 10 15 20 25 Total Gate Charge---Qg(nC) 30 35 Maximum Drain Current vs Case Temperature -ID, Maximum Drain Current(A) 20 18 16 14 12 10 8 6 4 2 0 25 MTBB0P10J3 50 75 100 125 Case Temperature---TC(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 6/9 Typical Characteristics(Cont.) Transient Thermal Response Curves ZθJC(t), Thermal Response 10 D=0.5 1 1.ZθJC(t)=2.5 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTBB0P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTBB0P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBB0P10J3 CYStek Product Specification Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : 2015.06.30 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name BB0 P10 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBB0P10J3 CYStek Product Specification