MTB06N03I3

CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB06N03I3
BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=5V, ID=24A
30V
75A
4.5mΩ(typ)
7.3mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
Outline
MTB06N03I3
TO-251
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
30
±20
75
47
200
53
140
40
50
20
-55~+150
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTB06N03I3
CYStek Product Specification
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
30
1
-
1.5
4.5
7.3
28
3
±100
1
25
6
9.5
-
V
V
nA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =5V, ID=24A
VDS =5V, ID=24A
-
53
26
7
12
26
12
54
18
2811
316
276
1.2
-
-
30
10
40
160
1.3
-
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
μA
mΩ
S
nC
ID=30A, VDS=15V, VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTB06N03I3
MTB06N03I3
Package
TO-251
(RoHS compliant & Halogen-free)
Shipping
Marking
80 pcs / tube, 50 tubes / box
B06N03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 3/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50
BVDSS, Drain-Source Breakdown
Voltage(V)
240
5V, 6V,7V,8V,9V,10V
ID, Drain Current(A)
200
160
120
VGS=4V
80
VGS=2V
40
45
40
35
30
ID=250μA,
VGS=0V
25
VGS=3V
20
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
0.001
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=30A
80
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
70
60
50
40
30
20
10
8
7
VGS=10V, ID=30A
6
5
4
3
2
1
0
0
0
MTB06N03I3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 4/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
VGS(th), Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
ID=250μA
1.8
1.6
1.4
1.2
1
Crss
0.8
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
140
10
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=30A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Total Gate Charge---Qg(nC)
50
60
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
90
ID, Maximum Drain Current(A)
1000
10μs
ID, Drain Current(A)
60
Gate Charge Characteristics
100
100
20
Tj, Junction Temperature(°C)
100μs
1ms
10ms
RDS(ON) Limit
10
100ms
DC
1
80
70
60
50
40
30
20
10
0
0.1
0.01
MTB06N03I3
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB06N03I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 6/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB06N03I3
CYStek Product Specification
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 7/9
CYStech Electronics Corp.
TO-251 Dimension
Marking:
B06
N03
Product Name
Date Code
□□□□
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Inches
Min.
Max.
0.250
0.262
0.205
0.213
0.571
0.587
0.028
0.035
0.020
0.028
0.091 TYP
0.091 TYP
0.017
0.023
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
6.350
6.650
5.200
5.400
14.500
14.900
0.700
0.900
0.500
0.700
2.300 TYP
2.300 TYP
0.430
0.580
DIM
I
J
K
L
M
N
S
T
Inches
Min.
Max.
0.087
0.094
0.213
0.224
0.295
0.311
0.042
0.054
0.017
0.023
0.118 REF
0.197 REF
0.150 REF
Millimeters
Min.
Max.
2.200
2.400
5.400
5.700
7.500
7.900
1.050
1.350
0.430
0.580
3.000 REF
5.000 REF
3.800 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB06N03I3
CYStek Product Specification