MTN9240J3

CYStech Electronics Corp.
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN9240J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=5V, ID=25A
RDS(ON)@VGS=4.5V, ID=25A
100V
33A
36mΩ(typ)
38mΩ(typ)
39mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTN9240J3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTN9240J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN9240J3
CYStek Product Specification
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.3mH, ID=32A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
100
±20
33
23
90
32
154
9
115
57.5
-55~+175
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
1.3
50 (Note)
110
Unit
°C/W
Note : When mounted on the minimum pad size recommended (PCB mount).
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
MTN9240J3
Min.
Typ.
Max.
Unit
Test Conditions
100
1
-
1.4
36
38
39
24
2
±100
1
25
45
45
50
-
V
V
nA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =100V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
VGS =10V, ID=25A
VGS =5V, ID=25A
VGS =4.5V, ID=25A
VDS =10V, ID=20A
-
21
3
10
-
μA
mΩ
S
nC
VDS=80V, ID=25A, VGS=10V
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
11
34
62
32
1180
114
60
-
-
0.88
56
230
33
90
1.2
-
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 3/ 9
ns
VDS=50V, ID=1A, VGS=10V, RGS=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IF=25A, VGS=0V
IF=25A, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTN9240J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
5V
80
ID, Drain Current(A)
70
60
50
BVDSS, Normalized Drain-Source
Breakdown Voltage
90
VGS=4V
40
VGS=3V
30
20
VGS=2V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
10
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
10000
VGS=2.5V
1000
VGS=3V
VGS=4.5V
100
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
3
180
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-20
ID=25A
160
140
120
100
80
60
40
2.5
VGS=10V, ID=25A
2
1.5
1
0.5
20
0
0
0
MTN9240J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), NormalizedThreshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
20
Forward Transfer Admittance vs Drain Current
140
180
10
VDS=20V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance
100
Gate Charge Characteristics
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
8
VDS=50V
VDS=80V
6
4
2
ID=25A
0
0.01
0.01
0.1
1
10
ID, Drain Current(A)
0
100
100
ID, Maximum Drain Current(A)
100μs
10
1ms
10ms
1
TC=25°C, Tj=175°C
VGS=10V, RθJC=1.3°C/W
Single Pulse
10
15
20
Qg, Total Gate Charge(nC)
25
40
10μs
RDS(on)
limited
5
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
60
Tj, Junction Temperature(°C)
100ms
DC
35
30
25
20
15
10
5
0
0.1
0.1
MTN9240J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100 125
150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 6/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
125
100
VDS=10V
PD, Power Dissipation(W)
90
ID, Drain Current (A)
80
70
60
50
40
30
20
100
75
50
25
10
0
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
0
25
50
75
100
125
150
175
200
TC , Case Temperature(℃)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
1
D=0.5
1.ZθJC(t)=1.3 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN9240J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTN9240J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN9240J3
CYStek Product Specification
Spec. No. : C574J3
Issued Date : 2012.08.17
Revised Date : 2013.12.26
Page No. : 9/ 9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
9240
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN9240J3
CYStek Product Specification