MTB04N03Q8

CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03Q8
BVDSS
ID@ TC=25°C, VGS=10V
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
25A
3.5mΩ(typ)
4.8mΩ(typ)
Description
The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating package
Ordering Information
Device
MTB04N03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Symbol
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 2/9
Outline
MTB04N03Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, VDD=15V
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation
TA=100℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
30
±20
25
16
100 *1
20
40
0.3 *2
2.5
1
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
25
50 *3
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
MTB04N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
30
1.0
-
1.6
32
3.5
4.8
2.5
±100
1
25
4
6
-
4200
405
400
50
30
8
17
18
11
65
15
1.6
-
-
35
14
10
40
1.2
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=18A
VGS=±20V
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
VGS =10V, ID=18A
VGS =4.5V, ID=12A
pF
VGS=0V, VDS=15V, f=1MHz
nC
VDS=15V, VGS=10V, ID=18A
ns
VDS=15V, ID=1A, VGS=10V,
RGS=2.7Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB04N03Q8
CYStek Product Specification
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50
240
ID, Drain Current(A)
BVDSS, Drain-Source Breakdown
Voltage(V)
7V,8V,9V,10V
200
6V
VGS=5V
160
VGS=4V
120
80
40
VGS=2V
45
40
35
30
20
-100
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
ID=250μA,
VGS=0V
25
VGS=3V
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
1
0.001
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=18A
80
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
70
60
50
40
30
20
10
12
10
8
VGS=4.5V, ID=12A
6
4
VGS=10V, ID=18A
2
0
0
0
MTB04N03Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
10000
VGS(th), Threshold Voltage(V)
Capacitance---(pF)
Ciss
C oss
1000
Crss
ID=250μA
1.8
1.6
1.4
1.2
1
0.8
100
0.1
1
10
VDS , Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
140
10
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=18A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Qg, Total Gate Charge(nC)
50
60
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
RDS(ON) Limit
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
60
Gate Charge Characteristics
100
100
20
Tj, Junction Temperature(°C)
10μs
100μs
1ms
10
10ms
1
100m
TA=25°C, Tj=150°C
Single Pulse
0.1
DC
25
20
15
10
5
0
0.01
0.01
MTB04N03Q8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
100
ZθJA(t), Thermal Response
D=0.5
10
0.2
1.ZθJA(t)=50 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
0.1
0.05
0.02
1
0.01
Single Pulse
0.1
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB04N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB04N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB04N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2015.09.04
Page No. : 9/9
SOP-8 Dimension
Marking:
Device Name
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB04N03Q8
CYStek Product Specification