MTB20N03Q8

CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03Q8
BVDSS
ID
RDS(ON)@VGS=10V, ID=9A
RDS(ON)@VGS=4.5V, ID=7A
30V
10.2A
13.6 mΩ(typ)
22.3 mΩ(typ)
Description
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
Symbol
Outline
MTB20N03Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTB20N03Q8
CYStek Product Specification
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25 °C
Total Power Dissipation
TA=100 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Limits
Tj, Tstg
30
±20
10.2
6.5
40 *1
10
5
1.6 *2
3.1
1.2
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
25
40
PD
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Unit
°C/W
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
30
1.0
-
1.7
9
13.6
22.3
3.0
±100
1
25
18
29
V
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=8A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =10V, ID=9A
VGS =4.5V, ID=7A
-
11
6.4
1.9
3
715
76
66
2.2
-
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
MTB20N03Q8
-
nC
ID=9A, VDS=15V, VGS=10V
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
CYStek Product Specification
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
7.5
tr
12
*1, 2
ns
td(OFF) *1, 2
21
tf *1, 2
7
Source-Drain Diode Ratings and Characteristics
IS *1
2.3
A
ISM *3
9.2
VSD *1
0.78
1.2
V
trr
50
ns
Qrr
2
nC
Test Conditions
VDS=15V, ID=1A, VGS=10V,
RG=6Ω
IF=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB20N03Q8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
Recommended Soldering Footprint
MTB20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
35
BVDSS, Normalized Drain-Source
Breakdown Voltage
40
10V,9V,8V,7V,6V,5V
30
VGS=4V
25
20
15
10
VGS=3V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
5
0.4
0
0
1
2
3
4
-75 -50 -25
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
280
2.4
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
240
200
160
120
ID=9A
ID=7A
80
40
2
VGS=10V, ID=9A
1.6
1.2
VGS=4.5V, ID=7A
0.8
0.4
0
0
MTB20N03Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=15V
VDS=5V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=10V
VDS=15V
0.1
Ta=25°C
Pulsed
8
VDS=10V
6
VDS=5V
4
2
ID=9A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
12
RDSON
Limite
100μs
1ms
10
10ms
100ms
1
1s
TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
0.1
DC
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
10
8
6
4
2
TA=25°C, VGS=10V, RθJA=40°C/W
0
0.01
0.1
MTB20N03Q8
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
60
VDS=10V
40
Power (W)
ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
40
50
30
30
20
20
10
10
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2014.02.14
Page No. : 9/9
SOP-8 Dimension
Marking:
Device Name
Data Code :
First Code : Last digit of Christian Year
Second Code : Month Code : Jan→A, Feb→B,
Mar→C, Apr→D, May→E, Jun→F, Jul→G,
Aug→H, Sep→J, Oct→K, Nov→L, Dec→M
Last Two Codes : Production Serial Code, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB20N03Q8
CYStek Product Specification