MTP4835AQ8

CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 1/8
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4835AQ8
Description
BVDSS
ID
RDSON@VGS=-10V, ID=-10A
RDSON@VGS=-4.5V,ID=-6A
-30V
-10A
18mΩ(typ)
27mΩ(typ)
The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
Outline
MTP4835AQ8
G：Gate
S：Source
SOP-8
D：Drain
Ordering Information
Device
MTP4835AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP4835AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Symbol
BVDSS
VGS
TA=25°C, VGS=-4.5V
TA=70°C, VGS=-4.5V
(Note 2)
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
Total Power Dissipation
(Note 1)
ID
IDM
PD
Tj ; Tstg
Rth,j-a
Limits
-30
±25
-10
-8
-50
3.1
2
-55~+150
40
Unit
V
A
W
°C
°C/W
Note : 1.Surface mounted on FR-4 board, t≤10sec; 125°C/W when mounted on minimum copper pad. The value in any
given application depends on the user’s specific board design.
2.Pulse width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-30
V
VGS=0, ID=-250μA
VGS(th)
-1
-1.4
-2.5
V
VDS=VGS, ID=-250μA
IGSS
±100
nA
VGS=±25V, VDS=0
-1
VDS=-24V, VGS=0
IDSS
μA
VDS=-24V, VGS=0, Tj=125°C
-25
18
25
VGS=-10V, ID=-10A
*RDS(ON)
mΩ
27
35
VGS=-4.5V ID=-6A
*GFS
11
S
VDS=-10V, ID=-10A
Dynamic
Ciss
1728
pF
VDS=-25V, VGS=0, f=1MHz
Coss
143
Crss
115
*td(ON)
19
*tr
39
VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω
ns
*td(OFF)
60
*tf
20
*Qg
29
nC
VDS=-15V, VGS=-10V, ID=-10A
*Qgs
7
*Qgd
11
Source Drain Diode
*IS
-5
A
*ISM
-20
*VSD
-0.79
-1.2
V
VGS=0V, IS=-5A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP4835AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
50
45
-VGS=4V
40
-ID, Drain Current (A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V
35
30
-VGS=3V
25
20
15
10
-VGS=2V
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
5
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2.5V
VGS=-3V
VGS=-4.5V
100
VGS=-10V
10
0.01
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IDR, Reverse Drain Current (A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
120
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-10A
100
80
60
40
20
VGS=-10V, ID=-10A
1.6
1.2
0.8
0.4
0
0
MTP4835AQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 4/8
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) ,Normalized Threshold
Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
Crss
0.4
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
100
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
10
1
VDS=-10V
Pulsed
Ta=25°C
0.1
VDS=-15V
ID=-10A
8
6
4
2
0
0.01
0.001
0.01
0.1
-ID, Drain Current(A)
1
0
10
Maximum Safe Operating Area
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs JunctionTemperature
100
12
1ms
10
10ms
100ms
1
1s
TA=25°C, Tj=150°C
VGS=-10V, RθJA=40°C/W
Single Pulse
0.1
DC
0.01
-ID, Maximum Drain Current(A)
100μs
RDS(ON)
Limite
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
10
8
6
4
2
TA=25°C, VGS=-10V, θJA=40°C/W
0
0.01
MTP4835AQ8
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 5/8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
50
VDS=-10V
45
35
Power (W)
-ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
40
40
30
25
20
30
20
15
10
10
5
0
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
6
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP4835AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP4835AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP4835AQ8
CYStek Product Specification
Spec. No. : C830Q8
Issued Date : 2012.09.19
Revised Date : 2013.10.30
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
4835A
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP4835AQ8
CYStek Product Specification