Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 1/ 9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C -30V ID@VGS=-10V, TA=25°C VGS=-10V, ID=-20A -22A 3.2mΩ VGS=-4.5V, ID=-17A 5.1mΩ RDSON(TYP) Features -90A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline EDFN5×6 MTB5D0P03H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB5D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB5D0P03H8 CYStek Product Specification Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V TC=25℃ (Note1) TC=100℃ (Note1) Total Power Dissipation TA=25°C (Note2) TA=70°C (Note2) VDS VGS Operating Junction and Storage Temperature Range 10s -30 ±25 -90 -57 ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Steady State -22 -17.6 Unit V -14.2 -11.4 -200 *1,2 -30 45 83.3 33.3 5.0 2.1 3.2 1.3 -55~+150 A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient Symbol Rth,j-c (Note2) t≤10s Steady State Rth,j-a Typical Maximum 1 1.5 18 25 50 60 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 MTB5D0P03H8 Min. Typ. Max. Unit -30 -1.0 - 58 3.2 5.1 -2.5 ±100 -1 -25 5.5 8.5 V V S nA μA mΩ mΩ Test Conditions VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VDS =-5V, ID=-20A VGS=±25V VDS =-24V, VGS =0V VDS =-24V, VGS =0, Tj=125°C VGS =-10V, ID=-20A VGS =-4.5V, ID=-17A CYStek Product Specification CYStech Electronics Corp. Dynamic *4 Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode VSD *1 trr Qrr - 8120 919 878 121 18.6 24.5 19.4 21.6 133 49.2 3.8 181 29 32 200 74 - -0.8 26 17 -1.2 - Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 3/ 9 pF VDS=-15V, VGS=0V, f=1MHz nC VDS=-24V, VGS=-10V, ID=-20A ns VDS=-15V, ID=-20A, VGS=-10V, RG=2.7Ω Ω f=1MHz V ns nC IS=-20A, VGS=0V IF=-10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. Recommended Soldering Footprint unit : mm MTB5D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 200 -BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V,4.5V,4V -I D, Drain Current(A) 160 -VGS=3.5V 120 -VGS=3V 80 -VGS=2.5V 40 1.2 1 0.8 0.6 ID=-250μA, VGS=0V -VGS=2V 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 In descending order VGS=-2.5V -3V -4.5V -10V 90 80 70 60 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 100 50 40 30 20 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 10 0.2 0 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 5 10 15 20 25 30 -IDR , Reverse Drain Current(A) 35 40 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 3 90 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-20A 80 70 60 50 40 30 20 10 2.5 VGS=-10V, ID=-20A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 3.2mΩ typ 0 0 0 MTB5D0P03H8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 5/ 9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage 100000 Capacitance---(pF) Ciss 10000 C oss 1000 Crss f=1MHz 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 100 0 -75 -50 -25 30 10 20 -VDS, Drain-Source Voltage(V) 75 100 125 150 175 200 Gate Charge Characteristics 10 100μ s RDS(ON) Limited 100 1ms 10ms 100ms 1s 10 DC TC=25°C, Tj=150°C, VGS=-10V, RθJC=1.5°C/W, single pulse 1 -VGS, Gate-Source Voltage(V) 1000 -I D, Drain Current (A) 25 50 Tj, Junction Temperature(°C) Maximum Safe Operating Area 8 6 4 VDS=-24V ID=-20A 2 0 0.1 0.1 1 10 -VDS, Drain-Source Voltage(V) 0 100 20 40 60 80 100 Qg, Total Gate Charge(nC) 120 140 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Case Temperature 100 GFS , Forward Transfer Admittance(S) 120 -I D, Maximum Drain Current(A) 0 100 80 60 40 VGS=-10V, Tj(max)=150°C, RθJC=1.5°C/W, single pulse 20 0 25 MTB5D0P03H8 50 75 100 125 150 TC , Case Temperature(°C) 175 200 10 1 VDS=-5V Pulsed Ta=25°C 0.1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 80 350 VDS=-10V 70 300 TJ(MAX) =150°C TA=25°C θ JA=65°C/W 250 Power (W) -ID, Drain Current(A) 60 50 40 200 150 30 100 20 50 10 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Power Derating Curve 100 PD, Power Dissipation(W) 80 60 40 20 0 0 25 50 75 100 125 TC, Case Temperature(℃) 150 175 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=1.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB5D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension Pin #1 MTB5D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB5D0P03H8 CYStek Product Specification Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 9/ 9 CYStech Electronics Corp. DFN5×6 Dimension Marking : Device Name B5D0 P03 Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB5D0P03H8 CYStek Product Specification