MTB2D5N03BH8

CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB2D5N03BH8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=24A
30V
60A
20A
2.1 mΩ(typ)
2.9 mΩ(typ)
Outline
DFN5×6
MTB2D5N03BH8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB2D5N03BH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB2D5N03BH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(Package limit)
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
Unit
30
±20
90
57
60
20 *3
16 *3
200 *1
53
140
50
20
2.5 *3
1.6 *3
-55~+150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N-CH
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
MTB2D5N03BH8
Min.
Typ.
Max.
Unit
30
1.0
-
50
2.1
2.9
2.5
±100
1
25
2.9
4.0
V
V
S
nA
-
2743
495
293
-
μA
mΩ
mΩ
pF
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20V
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =4.5V, ID=24A
VGS=0V, VDS=15V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Min.
-
Typ.
55.5
27.6
9.7
11.5
17.6
20.2
59
13.6
1.2
Max.
-
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
0.8
19
10.5
60
200
1.2
-
Unit
Test Conditions
nC
VDS=15V, VGS=10V, ID=30A
ns
VDS=15V, ID=24A, VGS=10V,
RGS=2.7Ω
Ω
f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
IF=24A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB2D5N03BH8
CYStek Product Specification
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
5V
ID, Drain Current(A)
160
120
VGS=4V
80
BVDSS, Normalized Drain-Source
Breakdown Voltage
200
VGS=3.5V
40
VGS=2.5V
VGS=3V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=30A
80
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
70
60
50
40
30
20
10
2.8
2.4
VGS=10V, ID=30A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 2.1 mΩ typ.
0
0
0
MTB2D5N03BH8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), NormalizedThreshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
8
6
4
2
VDS=15V
ID=30A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Total Gate Charge---Qg(nC)
60
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
100
1000
100
RDS(ON)
Limit
1ms
10ms
100ms
10
1s
TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
1
DC
ID, Maximum Drain Current(A)
90
100μ s
ID, Drain Current(A)
50
Silicon Limit
80
70
60
Package Limit
50
40
30
20
VGS=10V, RθJC=2.5°C/W
10
0
0.1
0.01
MTB2D5N03BH8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
200
3000
180
VDS=10V
2500
140
Power (W)
ID, Drain Current (A)
160
120
100
80
TJ(MAX) =150°C
TC=25°C
θ JC=2.5°C/W
2000
1500
1000
60
40
500
20
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
6
0
1E-04 0.001 0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5 °C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
MTB2D5N03BH8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB2D5N03BH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB2D5N03BH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date : 2015.03.23
Page No. : 9/9
DFN5×6 Dimension
Marking:
Device Name
B2D5
N03B
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 REF
4.90
5.10
1.40 REF
DIM
A
A1
b
c
D
F
Inches
Min.
Max.
0.031
0.039
0.000
0.002
0.014
0.019
0.010 REF
0.193
0.201
0.055 REF
DIM
E
e
H
L1
G
K
Millimeters
Min.
Max.
5.70
5.90
1.27 BSC
5.95
6.20
0.10
0.18
0.60 REF
4.00 REF
Inches
Min.
Max.
0.224
0.232
0.050 BSC
0.234
0.244
0.004
0.007
0.024 REF
0.157 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB2D5N03BH8
CYStek Product Specification