MTC5806V8

Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 1/13
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC5806V8
N-CH
60V
4.3A
6.4A
37mΩ
42mΩ
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
P-CH
-60V
-3.3A
-4.6A
70mΩ
93mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3×3
MTC5806V8
G:Gate S:Source D:Drain
Pin 1
Ordering Information
Device
MTC5806V8-0-T6-G
Package
Shipping
DFN3×3
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTC5806V8
CYStek Product Specification
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 2/13
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current *2
TA=25 °C, VGS=10V (-10V)
IDSM
TA=70 °C, VGS=10V (-10V)
TC=25 °C, VGS=10V (-10V)
Continuous Drain Current
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current
IDM
*3
Single device operation
Total Power Dissipation
ID
Single device value at dual operation
TC=25°C
Limits
N-channel P-channel
60
-60
±20
±20
4.3
-3.3
3.4
-2.6
6.4
-4.6
4.5
-3.3
20
-20
Operating Junction and Storage Temperature Range
V
A
1.5 *2
PDSM
1.24 *2
W
3.75
PD * 1
TC=100°C
Unit
1.88
Tj; Tstg
°C
-55~+175
Thermal Data
Parameter
Symbol
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
60
1
-
37
42
9.5
2.5
±100
1
10
58
60
-
-
1173
45
35
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
MTC5806V8
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=48V, VGS=0V
VDS=48V, VGS=0V, Tj=70°C
VGS=10V, ID=4.3A
VGS=4.5V, ID=4A
VDS=5V, ID=4.3A
pF
VDS=25V, VGS=0V, f=1MHz
V
nA
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
-
9.2
16.6
37.2
15.6
18
3.0
2.6
-
-
0.74
12
6
1.2
-
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 3/13
ns
VDS=30V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=30V, ID=4.3A, VGS=10V
V
ns
nC
VGS=0V, IS=1.3A
IS=1.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-60
-1.0
-
70
93
8.5
-2.5
±100
-1
-10
90
125
-
-
940
49
35
7.4
18.8
64.6
28.2
19.3
2.7
3.0
-
-
-0.76
10
5
-1.2
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V, Tj=70°C
VGS=-10V, ID=-3.3A
VGS=-4.5V, ID=-3A
VDS=-5V, ID=-3.3A
pF
VDS=-25V, VGS=0V, f=1MHz
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-30V, ID=-3.3A, VGS=-10V
V
VGS=0V, IS=-1.3A
ns
nC
IS=-1.3A, VGS=0V, dI/dt=100A/μs
V
nA
μA
mΩ
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC5806V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 4/13
Recommended Soldering Footprint
unit : mm
MTC5806V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
20
ID, Drain Current(A)
10V, 9V, 8V, 7V, 6V, 5V, 4V
15
10
VGS=3V
5
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=2.5V
VGS=3V
100
VGS=4.5V
VGS=10V
10
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
6
8
IDR , Reverse Drain Current(A)
10
2.8
R DS(ON), Normalized Static DrainSource On-State Resistance
100
90
80
ID=4.3A
70
60
50
40
30
20
10
2.4
2
VGS=4.5V, ID=4A
RDS(ON) @Tj=25°C : 42mΩ typ.
1.6
1.2
0.8
VGS=10V, ID=4.3A
RDS(ON) @Tj=25°C : 37mΩ typ.
0.4
0
0
MTC5806V8
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 6/13
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
25 50
75 100 125 150 175 200
Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
0
Tj, Junction Temperature(°C)
1
0.1
VDS=10V
Pulsed
Ta=25°C
8
6
4
VDS=30V
2
ID=4.3A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
100
ID, Maximum Drain Current(A)
ID, Drain Current(A)
4.5
RDS(ON)
Limite
10
100μ s
1ms
1
10ms
100m
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=84°C/W,Single Pulse
1s
DC
MTC5806V8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
3.5
3
2.5
2
1.5
TA=25°C, VGS=10V
RθJA=84°C/W
1
0.5
0
0.01
0.01
4
1000
25
50
75
100
125
150
175
TJ, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 7/13
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
50
20
18
VDS=10V
TJ(MAX) =150°C
TA=25°C
θ JA=84°C/W
40
16
14
Power (W)
ID, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
12
10
8
30
20
6
10
4
2
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal
Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=84°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
Maximum Drain Current vs Case Temperature
ID, Maximum Drain Current(A)
7
6
5
4
3
2
Tj(max) =175°C, VGS=4.5V
RθJC=40°C/W
1
0
25
MTC5806V8
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 8/13
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
20
-I D, Drain Current (A)
-10V, -9V, -8V, -7V,-6V,-5V
15
VGS=-4V
10
VGS=-3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1000
1.2
-VSD , Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
VGS=0V
VGS=-3V
VGS=-4.5V
100
VGS=-10V
1
Tj=25°C
0.8
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
R DS(on) , Normalized Static Drain-Source
On-State Resistance
200
180
ID=-3.3A
160
2
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
Tj=150°C
0.6
140
120
100
80
60
40
20
2
1.8
VGS=-4.5V, ID=-3A
RDS(ON) @Tj=25°C : 93mΩ typ.
1.6
1.4
1.2
1
0.8
VGS=-10V, ID=-3.3A
0.6
RDS(ON) @Tj=25°C : 70mΩ typ.
0.4
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTC5806V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 9/13
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
ID=-250μA
1.2
1
0.8
0.6
Crss
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25 50 75 100 125 150 175 200
10
10
1
0.1
VDS=-10V
Pulsed
TA=25°C
8
6
4
VDS=-30V
2
ID=-3.3A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4
-I D, Maximum Drain Current(A)
100
-I D, Drain Current(A)
0
Tj, Junction Temperature(°C)
RDS(ON)
Limited
10
100μs
1
1ms
10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
θ JA=84°C/W, Single Pulse
1s
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V
RθJA=84°C/W
0.5
DC
0
0.01
0.01
MTC5806V8
0.1
1
10
100
-ID, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 10/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
50
20
VDS=-10V
18
TJ(MAX) =150°C
TA=25°C
θ JA=84°C/W
40
16
14
Power (W)
-I D, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
12
10
8
30
20
6
10
4
2
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal
Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=84°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
Maximum Drain Current vs Case Temperature
-I D, Maximum Drain Current(A)
4.5
4
3.5
3
2.5
2
1.5
1
Tj(max)=175°C, VGS=-4.5V
RθJC=40°C/W
0.5
0
25
MTC5806V8
50
75
100
125 150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 11/13
Reel Dimension
Carrier Tape Dimension
MTC5806V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC5806V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date :
age No. : 13/13
DFN3×3 Dimension
Marking:
D1 D1 D2 D2
Date
Code
5806
S1 G1 S2 G2
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
Min.
Max.
0.650
0.850
0.152 REF
0.000
0.050
2.900
3.100
0.935
1.135
0.280
0.480
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
D2
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.037
0.045
0.011
0.019
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC5806V8
CYStek Product Specification