MTB20C06KQ8

Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 1/13
CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
MTB20C06KQ8
BVDSS
ID@VGS=10V(-10V)
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
RDSON(TYP.)@VGS=4V(-4V)
N-CH
60V
6A
18.1mΩ
20.5mΩ
21.7mΩ
P-CH
-60V
-5A
27.9mΩ
41.4mΩ
47.8mΩ
Description
The MTB20C06KQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Common drain structure
• Pb-free lead plating and halogen-free package
Ordering Information
Device
MTB20C06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20C06KQ8
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 2/13
CYStech Electronics Corp.
Equivalent Circuit
Outline
MTB20C06KQ8
SOP-8
G：Gate S：Source D：Drain
Absolute Maximum Ratings (TA=25C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current TA=25 C, VGS=10V (-10V)
(Note 2) TA=70 C, VGS=10V (-10V)
Pulsed Drain Current (Note 1)
ID
IDM
Power Dissipation for Dual Operation
±20
±20
6
-5
4.8
-4
30
-20
Unit
V
A
2
PD
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Limits
N-channel
P-channel
60
-60
1.6 (Note 2)
W
0.9 (Note 3)
Tj; Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
10
78 (Note 2)
135 (Note 3)
Unit
C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
MTB20C06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 3/13
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
-
18.1
20.5
21.7
15
2.5
±10
1
25
23.5
26.6
28.5
-
-
736
140
69.7
8.6
17.6
39.8
20
17.5
1.7
5.9
-
-
-
6
*ISM
-
-
24
*VSD
-
0.8
1.2
V
VGS=0V, IS=6A
*trr
*Qrr
-
13.9
8.9
-
ns
nC
IF=2A, dIF/dt=100A/μs
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*IS
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=60V, VGS=0V
VDS=48V, VGS=0V, Tj=85C
ID=6A, VGS=10V
ID=4A, VGS=4.5V
ID=3A, VGS=4V
VDS=5V, ID=6A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=30V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=48V, ID=6A, VGS=10V
V
μA
m
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-60
-1.0
-
27.9
41.4
47.8
13
-2.5
±10
-1
-25
36.5
54.0
62.5
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
MTB20C06KQ8
V
μA
m
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±16V, VDS=0V
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V, Tj=85C
ID=-5A, VGS=-10V
ID=-4A, VGS=-4.5V
ID=-3A, VGS=-4V
VDS=-5V, ID=-5A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 4/13
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*IS
-
1453
218
120
14
18.8
68.2
66.2
28.5
4.9
8.4
-
-
-
-5
*ISM
-
-
-20
*VSD
-
-0.79
-1.2
V
VGS=0V, IS=-5A
*trr
*Qrr
-
14.9
8.3
-
ns
nC
IF=2A, dIF/dt=100A/μs
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-48V, ID=-5A, VGS=-10V
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTB20C06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
24
10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V
ID, Drain Current(A)
20
16
3.5V
12
8
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
4
VGS=3V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4V
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
10
0.2
0.01
0.1
1
10
ID, Drain Current(A)
100
0
2
4
6
8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
90
80
ID=6A
70
60
50
40
30
20
10
1.8
VGS=10V, ID=6A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 18.1mΩ typ.
0.6
0.4
0
0
MTB20C06KQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 6/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
Coss
100
Crss
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=30V
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
VDS=15V
6
4
VDS=48V
2
ID=6A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
Maximum Safe Operating Area
7
100
ID, Maxim um Drain Current(A)
100μs
RDS(ON) Limit
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
10
1ms
10ms
1
100m
1s
0.1
DC
TA=25°C, Tj=150°C, VGS=10V
RθJA=78°C/W,Single Pulse
6
5
4
3
2
TA=25°C, VGS=10V
RθJA=78°C/W
1
0
0.01
0.01
MTB20C06KQ8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 7/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
50
24
VDS=10V
TJ(MAX) =150°C
TA=25°C
RθJA=78°C/W
40
16
Power (W)
ID, Drain Current (A)
20
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
12
30
20
8
10
4
0
0.001
0
0
2
4
6
VGS, Gate-Source Voltage(V)
8
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTB20C06KQ8
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 8/13
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
-ID, Drain Current (A)
16
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-10V, -9V, -8V, -7V,-6V, -5V
-4.5V
12
-4V
8
4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-3.5V
VGS=-3V
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
0.4
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1000
1.2
VGS=-4V
100
-VSD, Source-Drain Voltage(V)
RDS( on), Static Drain-Source On-State
Resistance(mΩ)
VGS=0V
VGS=-4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=-10V
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
R DS(on) , Normalized Static Drain-Source
On-State Resistance
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
200
ID=-5A
160
4
6
-IS, Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
180
2
140
120
100
80
60
40
20
2
1.8
VGS=-10V, ID=-5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 27.9mΩ typ.
0.6
0.4
0
0
MTB20C06KQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 9/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(t h), Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
Coss
100
Crss
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=-30V
10
1
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
VDS=-5V
Pulsed
TA=25°C
VDS=-15V
6
4
VDS=-48V
2
ID=-5A
0
0.1
0.01
0.1
1
-ID, Drain Current(A)
0
10
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
100
-ID, Maximum Drain Current(A)
100μs
-ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
10
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=78°C/W, Single Pulse
DC
5
4
3
2
TA=25°C, VGS=-10V
RθJA=78°C/W
1
0
0.01
0.01
MTB20C06KQ8
0.1
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 10/13
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
50
20
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
VDS=-10V
Power (W)
-ID, Drain Current (A)
TJ(MAX) =150°C
TA=25°C
RθJA=78°C/W
40
16
12
30
8
20
4
10
0
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTB20C06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 11/13
Reel Dimension
Carrier Tape Dimension
MTB20C06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB20C06KQ8
CYStek Product Specification
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 13/13
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
B20C
06K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB20C06KQ8
CYStek Product Specification