MTC4501Q8

CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC4501Q8
Description
The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTC4501Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTC4501Q8
CYStek Product Specification
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 2)
BVDSS
VGS
ID
ID
IDM
Pd
(Note 1)
(Note 1)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Tj
Tstg
Rth,ja
Limits
N-channel
P-channel
30
±20
7
5.8
20
-30
±16
-5.3
-4.7
-20
2
0.016
-55~+150
-55~+150
62.5
Unit
V
V
A
A
A
W
W / °C
°C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
30
1.0
-
0.02
13
3.0
±100
1
25
28
42
-
V
V/°C
V
nA
μA
μA
645
150
95
6
5.2
18.8
4.4
8.4
2.1
4.7
-
-
1.2
1.67
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=70°C
ID=7A, VGS=10V
ID=5A, VGS=4.5V
VDS=10V, ID=7A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A,
VGS=10V, RG=3.3Ω, RD=15Ω
nC
VDS=24V, ID=7A, VGS=4.5V
V
A
VGS=0V, IS=7A
VD=VG=0V, VS=1.2V
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 3/12
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-30
-1.0
-
-0.028
8.5
-3.0
±100
-1
-25
50
90
-
V
V/°C
V
nA
μA
μA
790
440
120
12
20
45
27
20
3.5
2
-
ns
ns
ns
ns
nC
nC
nC
-
-1.2
-1.67
V
A
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
-
Test Conditions
S
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±16V, VDS=0
VDS=-30V, VGS=0
VDS=-24V, VGS=0, Tj=70°C
ID=-5.3A, VGS=-10V
ID=-4.2A, VGS=-4.5V
VDS=-10V, ID=-5.3A
pF
VDS=-15V, VGS=0, f=1MHz
mΩ
VDS=-15V, ID=-1A,
VGS=-10V, RG=6Ω, RD=15Ω
VDS=-15V, ID=-5.3A, VGS=-10V
VGS=0V, IS=-2.6A
VD=VG=0V, VS=-1.2V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTC4501Q8
MTC4501Q8
Package
SOP-8
(Pb-free lead plating package)
Shipping
Marking
3000 pcs / Tape & Reel
4501SS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 4/12
N-channel Characteristic Curves
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 5/12
N-channel Characteristic Curves(Cont.)
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 6/12
N-channel Characteristic Curves(Cont.)
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 7/12
P-channel Characteristic Curves
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 8/12
P-channel Characteristic Curves(Cont.)
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 9/12
P-channel Characteristic Curves(Cont.)
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC4501Q8
CYStek Product Specification
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date : 2011.03.18
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
4501SS
Date Code
□□□□
H
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1890
0.2007
0.1496
0.1654
0.2283
0.2441
0.0480
0.0519
0.0138
0.0193
0.1472
0.1527
0.0531
0.0689
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.80
5.10
3.80
4.20
5.80
6.20
1.22
1.32
0.35
0.49
3.74
3.88
1.35
1.75
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0098 REF
0.0118
0.0354
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.25 REF
0.30
0.90
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC4501Q8
CYStek Product Specification