Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN75N03J3 BVDSS ID RDSON 25V 75A 4.5mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline TO-252 MTN75N03J3 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TC=25°C Continuous Drain Current @VGS=4.5V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area Symbol VDS VGS ID ID IDM Pd EAS IAS Tj, Tstg Limits 25 ±20 75 62.5 350 *1 96 0.75 400 *2 40 -55~+150 Unit V V A A A W W/°C mJ A °C *2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A MTN75N03J3 CYStek Product Specification Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.3 110 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 25 ∆BVDSS/∆Tj VGS(th) 1.0 GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *trr *Qrr - Typ. Max. Unit Test Conditions 0.02 29 3.7 6.0 3.0 ±100 1 25 4.5 7 V V/°C V S nA μA μA mΩ mΩ VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=30A VGS=±20 VDS =25V, VGS =0 VDS =20V, VGS =0, Tj=150°C VGS =10V, ID=40A VGS =4.5V, ID=30A 33 9 15 10 80 37 85 2070 990 300 - nC ID=30A, VDS=20V, VGS=4.5V ns VDS=15V, ID=30A, VGS=10V, RG=3.3Ω, RD=0.5Ω pF VGS=0V, VDS=25V, f=1MHz 50 51 1.5 - V ns nC IS=20A, VGS=0V IS=30A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN75N03J3 MTN75N03J3 Package TO-252 (RoHS compliant) Shipping Marking 2500 pcs / Tape & Reel 75N03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 3/7 Characteristic Curves MTN75N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 4/7 Characteristic Curves(Cont.) MTN75N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN75N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN75N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C412J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 7/7 TO-252 Dimension C A D B Device Name Date code G F L Marking: 75N03 □□□□ 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN75N03J3 CYStek Product Specification