CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 1/8 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580M3 SOT-89 ≒6K B B:Base C:Collector E:Emitter C E Ordering Information Device BTB1580M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 2/8 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Case RθJC Power Dissipation PD Power Dissipation @ TC=25°C Opeearting Junction Temperature Range Storage Temperature Range Tj Tstg Limits -150 -150 -5 -4 -6 (Note 1) 208 125 (Note 2) 62.5 (Note 3) 85 (Note 4) 43 0.7 1.2 (Note 2) 2.4 (Note 3) 1.8 (Note 4) 3.5 -55~+175 -55~+175 Unit V A C/W W C Note : 1. Single Pulse Pw≦350μs, Duty≦2%. 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on a ceramic board with area measuring 40×40×1mm. 4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm. Characteristics (Ta=25C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -150 -150 - Typ. - 4000 2000 - - Max. -100 -1 -2 -1.2 -2.2 200 Unit V V nA μA mA V V pF Test Conditions IC=-1mA, IB=0 IC=-100μA, IE=0 VCB=-150V, IE=0 VCE=-150V, IB=0 VEB=-5V, IC=0 IC=-2A, IB=-2mA VCE=-4V, IC=-2A VCE=-4V, IC=-1A VCE=-4V, IC=-2A VCB=-10V, IE=0A, f=1MHz *Pulse Test : Pulse Width 380μs, Duty Cycle2% BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 3/8 Recommended soldering footprint BTB1580M3 CYStek Product Specification Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Current Gain vs Collector Current 100000 100000 VCE =-4V 140°C 10000 85° C 25°C 25°C HFE, Current Gain HFE, Current Gain VCE =-3V 1000 100 10000 85°C 140°C 1000 100 0°C 0°C -40°C -40° 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10000 -VCESAT, Saturation Voltage(mV) 10000 -VCESAT, Saturation Voltage(mV) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current VCESAT @IC=250IB 1000 -40°C 0°C 25°C 85°C 140°C 100 VCESAT @IC=500IB 1000 -40°C 0°C 25°C 85°C 140°C 100 10 100 1000 -IC, Collector Current(mA) 10000 10 Saturation Voltage vs Collector Current 100 1000 -IC, Collector Current(mA) 10000 Saturation Voltage vs Collector Current 10000 VCESAT @IC=1000IB 1000 -40°C 0°C 25°C 85°C 140°C 100 -VBESA T, Saturation Voltage(mV) 10000 -VCESAT, Saturation Voltage(mV) 10 100 1000 -IC, Collector Current(mA) VBESAT @IC=250IB 1000 -40°C 0°C 25°C 85°C 140°C 100 10 BTB1580M3 100 1000 -IC, Collector Current(mA) 10000 10 100 1000 -IC , Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 5/8 Typical Characteristics(Cont.) Built-in Diode Characteristics On Voltage vs Collector Current 10000 10000 -40°C 0°C 25°C 85°C 140°C 1000 -VF, Forward Voltage(mV) -VBEON, On Voltage(mV) VBEON@VCE =-4V -40°C 0°C 25°C 85°C 140°C 1000 100 100 1 10 100 1000 -IC , Collector Current(mA) 1 10000 10 100 1000 -IF, Forward Current(mA) 10000 Power Derating Curves Capacitance vs Reverse-Biased Voltage 1000 3 See Note 3 on page 2 PD, Power Dissipation(W) Capacitance---(pF) 2.5 Cib 100 See Note 4 on page 2 2 See Note 2 on page 2 1.5 1 0.5 Cob 0 10 0.1 1 10 100 Reverse-Biased Voltage---(V) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(℃) 200 Power Derating Curve 4 PD, Power Dissipation(W) 3.5 3 2.5 2 1.5 1 0.5 0 0 BTB1580M3 25 50 75 100 125 150 TC, Case Temeprature(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2014.11.06 Page No. : 8/8 SOT-89 Dimension Marking: month code: 1~9, A,B,C 2 1 3 Product Code Year code : 6→2006, 7→2007,… BN A H C D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1580M3 CYStek Product Specification