CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTP3906N3 Description • Complementary to BTN3904N3. • Pb-free lead plating and halogen-free package Symbol Outline BTP3906N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTP3906N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD Tj Tstg Limits -40 -40 -5 -200 225 (Note) 560 150 -55~+150 Unit V V V mA mW mW °C °C Thermal Characteristics Symbol Parameter Rth,j-c Rth, j-a thermal resistance from junction to case thermal resistance from junction to ambient Conditions Value (Note ) 223 556 Unit ℃/W ℃/W Note : Free air condition Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) *hFE *hFE *hFE *hFE *hFE fT Cob Min. -40 -40 -5 -0.65 60 80 100 60 30 250 - Typ. -0.05 -0.12 -0.76 -0.88 - Max. -50 -50 -0.25 -0.4 -0.85 -0.95 300 4.5 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-10μA IC=-1mA IE=-10μA VCE=-30V, VBE=3V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-100μA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTP3906N3 CYStek Product Specification Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Saturation Voltage-(mV) Current Gain---HFE HFE@VCE=1V 100 10 100 10 0.1 1 10 100 1000 0.1 1 10 Collector Current--- IC(mA) Collector Current IC-(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 10000 1000 1000 VBE(SAT)@IC=10IB VCE=20V Cutoff Frequency(MHz) Saturation Voltage-(mV) 100 1000 100 100 0.1 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 4/7 Recommended Soldering Footprint BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTP3906N3 CYStek Product Specification Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code 2A Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP3906N3 CYStek Product Specification