CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 1/7 NPN Epitaxial Planar Transistor BTD5213M3 Features • High VCEO, VCEO=100V • High IC, IC(DC)=1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1260M3 • Pb-free lead plating and halogen-free package Symbol Outline BTD5213M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Storage Temperature Tj Tstg Note : 1. Single Pulse Pw≦350μs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm BTD5213M3 Limit Unit 100 100 5 1 2 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 V V V A A W W W °C/W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 100 100 5 160 - Typ. 230 6 Max. 1 1 0.3 400 - Unit V V V μA μA V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=80V. IE=0 VEB=4V,IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Q R Range 160~320 200~400 Ordering Information Device BTD5213M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name Recommended soldering footprint BTD5213M3 CYStek Product Specification Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT VCE=5V Saturation Voltage-(mV) Current Gain---HFE HFE 100 VCE=2V VCE=1V 10 IC=25IB 100 IC=10IB 10 1 10 100 Collector Current ---IC(mA) 1 1000 Saturation Voltage vs Collector Current 1000 10000 VBESAT@IC=10IB VBEON@VCE=2V On Voltage-(mV) Saturation Voltage-(mV) 10 100 Collector Current ---IC(mA) On Voltage vs Collector Current 10000 1000 1000 100 100 1 10 100 1000 10000 1 Collector Current--- IC(mA) 10 100 1000 Collector Current--- IC(mA) 10000 Capacitance Characteristics Transition Frequency vs Collector Current 100 1000 f=1MHz VCE=10V f=1MHz Capacitance---Cob(pF) Transition Frequency---fT(MHz) IC=20IB 100 10 1 10 1 BTD5213M3 10 100 Collector Current---IC(mA) 1000 0.1 1 10 Collector Base Voltage-- VCB(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 4/7 Typical Characteristics(Cont.) Power Derating Curves Power Dissipation---PD(W) 2.5 2 See Note 2 on page 1 1.5 See Note 1 on page 1 1 0.5 0 0 BTD5213M3 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTD5213M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD5213M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 7/7 SOT-89 Dimension Marking: A 2 1 3 Product Code H C month code: 1~9, A,B,C Wafer code HFE rank D B E Style: Pin 1. Base 2. Collector 3. Emitter I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD5213M3 CYStek Product Specification