CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816J3 BVCEO IC RCESAT Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 1/8 100V 4A 57mΩ(typ) Features • Low collector-to-emitter saturation voltage • High-speed switching • Large current capability • Good linearity of hFE • High fT • RoHS compliant package Applications • Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol Outline BTD1816J3 B：Base C：Collector E：Emitter BTD1816J3 TO-252(DPAK) B C E CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25°C Power Dissipation @ TC=25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 120 100 6 4 8 (Note 1) 1.2 1 20 125 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *RCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob ton tstg tf Min. 120 100 6 180 120 - Typ. 57 86 57 0.9 180 40 100 900 50 Max. 1 1 100 150 100 1.2 560 - Unit V V V μA μA mV mV mΩ V MHz pF ns ns ns Test Conditions IC=10μA, IE=0 IC=1mA, IB=0 IC=10μA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=200mA IC=1A, IB=50mA IC=2A, IB=200mA VCE=5V, IC=500mA VCE=5V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz VCC=50V, IC=10IB1=-10IB2=2A, RL=25Ω *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range BTD1816J3 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 3/8 Ordering Information Device HFE Rank BTD1816J3-R-T3-G R BTD1816J3-S-T3-G S Package Shipping TO-252 (Pb-free lead plating and halogen-free package) TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel 2500 pcs / Tape & Reel Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 2.5 0.5 1mA 0.4 Collector Current---IC(A) Collector Current---IC(A) 0.45 0.35 0.3 0.25 0.15 500uA 400uA 300uA 0.1 200uA 0.05 IB=100uA 0.2 5mA 2 1.5 2.5mA 2mA 1.5mA 1 0.5 1mA IB=500uA 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 6 20mA Collector Current---IC(A) Collector Current---IC(A) 4 10mA 3 8mA 6mA 2 4mA 1 6 IB=2mA 0 50mA 5 20mA 4 3 15mA 10mA 2 IB=5mA 1 0 0 BTD1816J3 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 CYStek Product Specification Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 125℃ 25℃ 75℃ 100 Current Gain---HFE Current Gain---HFE 125℃ 75℃ 25℃ 100 VCE=2V VCE=1V 10 10 10 100 1000 Collector Current---IC(mA) 10000 10 Current Gain vs Collector Current 1000 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 1000 125℃ 25℃ 75℃ 100 Saturation Voltage---(mV) Current Gain---HFE VCESAT=10IB 100 125℃ 75℃ 25℃ VCE=5V 10 10 10 100 1000 Collector Current---IC(mA) 10000 1 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT=50IB Saturation Voltage---(mV) VCESAT=20IB Saturation Voltage---(mV) 10 100 125℃ 75℃ 100 125℃ 75℃ 25℃ 25℃ 10 10 1 BTD1816J3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBESAT=10IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=100IB 1000 75℃ 25℃ 1000 100 125℃ 75℃ 125℃ 25℃ 100 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 10 100 1000 Collector Current---IC(mA) 10000 Capacitance vs Reverse-biased Voltage On Voltage vs Collector Current 10000 10000 VCE=5V Capacitance---(pF) On Voltage---(mV) Cib 25℃ 75℃ 1000 1000 100 Cob 125℃ 10 100 1 10 100 1000 Collector Current---IC(mA) 0.1 10000 100 Power Derating Curve Power Derating Curve 1.20 25 1.00 20 Power Dissipation---PD(W) Power Dissipation---PD(W) 1 10 Reverse-biased Voltage---VR(V) 0.80 0.60 0.40 0.20 15 10 5 0 0.00 0 BTD1816J3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTD1816J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1816J3 CYStek Product Specification Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2011.01.19 Page No. : 8/8 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name D1816 HFE Rank □ □□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 Date Code 3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1816J3 CYStek Product Specification