Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 1/8 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2411S3 Description • The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. • Low VCE(sat) • Low leakage current • High cutoff frequency • Complementary to BTA1036S3 • Pb-free package Symbol Outline BTC2411S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range Symbol Limits Unit VCBO VCEO VEBO IC 75 50 6 600 V V V mA Pd 200 Tj; Tstg -55~+150 (Note 1) mW °C Note 1: when mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTC2411S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 fT Cob Min. 75 50 6 35 50 75 100 40 - Typ. 0.2 230 8.3 Max. 10 10 100 0.25 0.45 1.0 1.2 300 - Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=10μA IC=1mA IE=10μA VCB=60V VCE=60V,VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTC2411S3 BTC2411S3 Package SOT-323 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel P1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.7 0.15 500uA 400uA 300uA 0.1 0.05 5mA 0.6 1mA 0.2 Collector Current---IC(A) Collector Current---IC(A) 0.25 200uA IB=100uA 0 0.5 0.4 2.5mA 2mA 0.3 1.5mA 0.2 1mA 0.1 IB=500uA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 Ta=125°C Current Gain---HFE Current Gain---HFE Ta=125°C 100 Ta=75°C Ta=25°C 100 Ta=25°C Ta=75°C VCE=2V VCE=1V 10 10 1 10 100 Collector Current---IC(mA) 1 1000 Current Gain vs Collector Current 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 1000 1000 Ta=125°C VCESAT=10IB Saturation Voltage---(mV) Current Gain---HFE 6 100 Ta=25°C Ta=75°C 100 125°C 75°C 25°C VCE=10V 10 10 1 BTC2411S3 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 4/8 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT=38IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=20IB 100 125°C 75°C 25°C 10 100 125°C 75°C 25°C 10 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBEON@VCE=10V Ta=75°C On Voltage---(mV) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=25°C 1000 75°C 25°C 1000 125°C 125°C 100 100 1 10 100 Collector Current---IC(mA) 1 1000 Capacitance vs Reverse-biased Voltage 10 100 Collector Current---IC(mA) 1000 Transition Frequency vs Collector Current 100 Transition Frequency---fT(MHz) 1000 Cib Capacitance---(pF) 1000 10 Cob VCE=5V 100 10 1 0.1 BTC2411S3 1 10 Reverse-biased Voltage---VR(V) 100 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 5/8 Typical Characteristics(Cont.) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BTC2411S3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTC2411S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2411S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : 2010.11.12 Page No. : 8/8 SOT-323 Dimension Marking: 3 A Q A1 1 C TE P1 Lp 2 detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A Style: Pin 1.Base 2.Emitter 3.Collector 2 mm 1 scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2411S3 CYStek Product Specification