MTB010N02DFJ6

CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 1/9
25V N-CHANNEL Enhancement Mode MOSFET
MTB010N02DFJ6
Features
BVDSS
ID@VGS=10V, TC=25°C
25V
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8.5A
8.8A
10.9mΩ(typ.)
RDSON@VGS=4.5V, ID=6.8A
15.3mΩ(typ.)
18.2A
• Low on-resistance
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFNWB2×2-6L-J
MTB010N02DFJ6
G：Gate S：Source D：Drain
Ordering Information
Device
MTB010N02DFJ6-0-T1-G
Package
DFNWB2×2-6L-J
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB010N02DFJ6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=70C, VGS=10V
Pulsed Drain Current (Note 1, 2)
Power Dissipation @ TA=25℃
Power Dissipation @ TA=70℃
Power Dissipation @ TC=25℃
Power Dissipation @ TC=70℃
Operating Junction and Storage Temperature
VDS
VGS
(Note 3)
(Note 3)
IDSM
ID
IDM
(Note 3)
(Note 3)
PDSM
PD
Tj, Tstg
Limits
25
±20
8.8
7.0
18.2
14.6
72
2.1
1.3
8.9
5.7
-55~+150
Unit
V
A
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
14
60 (Note 3)
Unit
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board.
Electrical Characteristics (Ta=25C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
MTB010N02DFJ6
Min.
Typ.
Max.
Unit
Test Conditions
20
1
-
10.9
15.3
7
2.35
±100
1
10
14.2
20
-
V
V
nA
μA
μA
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, Tj=55C
VGS=10V, ID=8.5A
VGS=4.5V, ID=6.8A
VDS=5V, ID=8.5A
-
539
104
85
10.2
21
21.6
11.2
-
pF
VDS=10V, VGS=0, f=1MHz
ns
VDD=13V, ID=8.5A, VGS=4.5V, RG=1.8Ω
m
CYStek Product Specification
CYStech Electronics Corp.
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
Rg
Source-Drain Diode
*VSD
*trr
*Qrr
-
13
6.7
1.8
3.0
4.7
-
-
0.87
5.9
3.9
1.0
-
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 3/9
nC
VDS=13V, ID=8.5A, VGS=10V

f=1MHz
V
ns
nC
VGS=0V, IS=8.5A
IF=8.5A, dIF/dt=280A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTB010N02DFJ6
CYStek Product Specification
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
80
10V,9V, 8V, 7V, 6V
60
VGS=5V
50
40
VGS=4V
30
VGS=3.5V
20
VGS=2.5V
10
ID=250μA,
VGS=0V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
70
1.2
1
0.8
VGS=3V
0.6
0
0
1
2
3
4
5
6
7
VDS, Drain-Source Voltage(V)
8
9
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
100
1
Tj=25°C
VSD, Source-Drain Voltage(V)
RDS( on), Static Drain-Source On-State
Resistance(mΩ)
90
80
70
60
VGS=3V
50
40
VGS=4.5V
30
20
0.8
0.6
Tj=150°C
0.4
0.2
VGS=0V
10
VGS=10V
0
0.1
0
1
10
ID, Drain Current(A)
0
100
2
3
4
5
6
7
8
IDR, Reverse Drain Current (A)
9
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2
180
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
1
ID=8.5A
160
140
120
100
80
60
40
1.8
VGS=10V, ID=8.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 10.9mΩ typ.
0.6
20
0.4
0
0
MTB010N02DFJ6
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(t h), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
Coss
100
Crss
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Maximum Drain Current vs Case Temperature
10
ID, Maxim um Drain Current(A)
25
1
0.1
VDS=5V
Ta=25°C
Pulsed
0.01
0.001
20
15
10
5
VGS=10V, RθJC=14°C/W
0
0.01
0.1
1
ID, Drain Current(A)
10
25
50
75
100
125
TC, Case Temperature(°C)
150
175
Gate Charge Characteristics
Maximum Safe Operating Area
10
100
100μs
1ms
10
10ms
100ms
1
DC
0.1
TA=25°C, Tj=150°C,
VGS=10V, RθJC=14°C/W
Single Pulse
VDS=5V
VGS, Gate-Source Voltage(V)
ID, Drain Current (A)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
GFS, Forward Transfer Admittance(S)
0
8
VDS=13V
6
4
VDS=20V
2
ID=8.5A
0
0.01
0.01
MTB010N02DFJ6
0.1
1
10
VDS, Drain-Source Voltage(V)
100
0
2
4
6
8
10
12
14
Qg, Total Gate Charge(nC)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
1000
80
TJ(MAX) =150°C
TC=25°C
RθJC=14°C/W
800
60
700
Power (W)
ID, Drain Current (A)
900
VDS=10V
70
50
40
30
600
500
400
300
20
200
10
100
0
0.0001 0.001
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
6
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.Rθ JC(t)=r(t)*Rθ JC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Zθ JC(t)
4.Rθ JC=14°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB010N02DFJ6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB010N02DFJ6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB010N02DFJ6
CYStek Product Specification
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
DFNWB2×2-6L-J Dimension
Marking:
Device
Code
Date
Code
BT02
□□□□
Style: Pin 1.Drain
4.Source
2.Drain 3.Gate
5.Drain 6.Drain
6-Lead DFNWB2×2-6L-J Plastic
Surface Mounted Package
CYStek Package Code: DFJ6
Millimeters
Min.
Max.
0.700
0.800
0.000
0.050
0.203 REF
1.924
2.076
1.924
2.076
0.800
1.000
0.850
1.050
DIM
A
A1
A3
D
E
D1
E1
Inches
Min.
Max.
0.028
0.031
0.000
0.002
0.008 REF
0.076
0.082
0.076
0.082
0.031
0.039
0.033
0.041
DIM
D2
E2
k
b
e
L
Millimeters
Min.
Max.
0.200
0.400
0.460
0.660
0.200
0.250
0.350
0.650 TYP
0.174
0.326
Inches
Min.
Max.
0.008
0.016
0.018
0.026
0.008
0.010
0.014
0.026 TYP
0.007
0.013
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB010N02DFJ6
CYStek Product Specification