CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN9971J3 BVDSS ID RDS(ON)@VGS=10V, ID=18A RDS(ON)@VGS=4.5V, ID=12A 60V 25A 27mΩ(typ) 31mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline TO-252(DPAK) MTN9971J3 G：Gate D：Drain S：Source G D S Ordering Information Device MTN9971J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN9971J3 CYStek Product Specification Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area VDS VGS ID ID IDM Pd Limits Tj, Tstg 60 ±20 25 18 50 *1 47 0.31 -55~+175 Symbol Rth,j-c Rth,j-a Value 3.2 110 Unit V V A A A W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss MTN9971J3 Min. Typ. Max. Unit Test Conditions 60 1.0 - 0.05 1.3 17 27 31 2.0 ±100 1 25 36 50 V V/°C V S nA μA μA mΩ mΩ VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS = VGS, ID=250μA VDS =10V, ID=18A VGS=±20 VDS =60V, VGS =0 VDS =48V, VGS =0, Tj=150°C VGS =10V, ID=18A VGS =4.5V, ID=12A - 18 5 6 7 9 23 6 1591 63 46 - nC ID=18A, VDS=48V, VGS=4.5V ns VDS=30V, ID=18A, VGS=10V, RG=3.3Ω, RD=1.67Ω pF VGS=0V, VDS=25V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode *VSD *trr *Qrr - 37 38 1.2 - V ns nC Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 3/9 IS=25A, VGS=0V IS=18A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTN9971J3 CYStek Product Specification Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 50 45 ID, Drain Current (A) 40 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V VGS=4V 35 30 25 20 15 VGS=3V 10 1.2 1 0.8 0.6 ID=250μA, VGS=0V 5 0.4 0 0 1 -75 -50 -25 5 2 3 4 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=2.5V 100 VGS=3V VGS=4.5V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 200 ID=18A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 120 80 40 2 VGS=10V, ID=18A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 27 mΩ 0 0 0 MTN9971J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=48V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 VDS=10 0.1 Ta=25°C Pulsed 8 VDS=30V VDS=12V 6 4 2 ID=18A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 100 1ms 100ms 1s 1 DC TC=25°C, Tj=175°C VGS=10V, θJC=3.2°C/W Single Pulse 0.1 ID, Maximum Drain Current(A) 10ms 10 8 12 16 Qg, Total Gate Charge(nC) 20 30 100μs RDSON Limited 4 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 25 20 15 10 5 VGS=10V, RθJC=3.2°C/W 0 0.01 0.1 MTN9971J3 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Maximum Power Rating Typical Transfer Characteristics 3000 60 VDS=10V Power (W) ID, Drain Current(A) 40 30 2000 1500 20 1000 10 500 0 0 2 TJ(MAX) =175°C TC=25°C θJC=3.2°C/W 2500 50 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.2°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN9971J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN9971J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN9971J3 CYStek Product Specification Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2013.12.26 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name 9971 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN9971J3 CYStek Product Specification