MTE65N20J3

CYStech Electronics Corp.
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTE65N20J3
BVDSS
200V
ID
VGS=10V, ID=11A
25A
61mΩ
VGS=6V, ID=5A
66mΩ
RDSON(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTE65N20J3
G：Gate
S：Source
TO-252(DPAK)
G
D：Drain
D S
Ordering Information
Device
MTE65N20J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE65N20J3
CYStek Product Specification
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
200
±20
25
18
60
20
320
4.6
107
1.14
-55~+175
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
MTE65N20J3
Min.
Typ.
Max.
Unit
Test Conditions
200
2.5
-
3.8
61
66
15
4.5
±100
1
25
80
100
-
V
V
nA
S
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±20, VDS=0
VDS =180V, VGS =0
VDS =180V, VGS =0, TJ=125°C
VGS =10V, ID=11A
VGS =6V, ID=5A
VDS =15V, ID=11A
-
60
12.1
24.2
62
62
200
100
-
nC
VDS=160V, ID=25A, VGS=10V
ns
VDS=100V, ID=20A, VGS=10V,
RG=25Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
2447
180
102
-
-
0.82
120
400
20
40
1.3
-
pF
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 3/9
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTE65N20J3
CYStek Product Specification
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
50
BVDSS, Normalized Drain-Source
Breakdown Voltage
60
10V,9V,8V,7V,6V
40
30
20
10
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=5V
0.4
0
0
4
8
12
16
VDS , Drain-Source Voltage(V)
-75 -50 -25
20
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=5V
VGS=6V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
ID=11A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=11A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 60.4mΩ
0
0
0
MTE65N20J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
180
10
VDS=160V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=15V
0.1
Ta=25°C
Pulsed
VDS=100V
8
6
4
2
ID=25A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
70
80
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
100
1ms
10
10ms
100ms
1s
1
DC
TC=25°C, Tj=175°C
VGS=10V, θJC=1.4°C/W
Single Pulse
0.1
ID, Maximum Drain Current(A)
100μs
RDSON
Limited
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
25
20
15
10
5
VGS=10V, RθJC=1.4°C/W
0
0.01
0.1
\
MTE65N20J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 6/9
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
120
60
PD, Power Dissipation(W)
ID, Drain Current(A)
50
40
30
20
VDS=15V
100
80
60
40
20
10
0
0
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
0
25
50
75
100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.4°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE65N20J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE65N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE65N20J3
CYStek Product Specification
Spec. No. : C872J3
Issued Date : 2012.10.25
Revised Date : 2013.12.30
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
E65
N20
Device
Name
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE65N20J3
CYStek Product Specification