MTA340N02N3

CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 1/8
25V N-Channel Enhancement Mode MOSFET
MTA340N02N3
BVDSS
ID
RDSON@VGS=4.5V, ID=650mA
RDSON@VGS=2.5V,ID=500mA
RDSON@VGS=1.8V,ID=200mA
25V
820mA
299mΩ(typ)
541mΩ(typ)
1.05Ω (typ)
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTA340N02N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C , VGS=4.5V
Continuous Drain Current @ TA=70C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
VESD
Tj, Tstg
Limits
25
±12
820 (Note 4)
656 (Note 4)
3.3
1.38 (Note 3)
0.35 (Note 4)
1400 (Note 5)
-55~+150
Unit
V
mA
A
W
V
C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
4. Surface mounted on FR-4 board of minimum pad size.
5. Human body model, 1.5kΩ in series with 100pF.
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 2/8
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
Rth,ja
RθJC
Limit
90
80
Unit
C/W
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 357C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
25
0.45
-
0.66
299
541
1.05
870
1.0
±10
1
10
390
705
1.5
-
V
V
-
35
11
9
7
21
25
47
1
0.05
0.4
-
-
0.78
1.0
Test Conditions
Ω
mS
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±12V, VDS=0
VDS=20V, VGS=0
VDS=20V, VGS=0 (Tj=70C)
VGS=4.5V, ID=650mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=200mA
VDS=10V, ID=400mA
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=500mA, VGS=4.5V,
RG=6Ω
nC
VDS=15V, ID=500mA, VGS=4.5V
V
VGS=0V, IS=150mA
μA
m
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTA340N02N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
3.5
ID, Drain Current (A)
3.0
VGS=4V
VGS=3.5V
VGS=4.5V
2.5
VGS=3V
2.0
VGS=2.5V
1.5
1.0
VGS=2V
0.5
ID=250μA,
VGS=0V
BVDSS, Normalized Drain-Source
Breakdown Voltage
VGS=5V
1.2
1
0.8
VGS=1.5V
0.6
0.0
0
0.5
1
1.5
VDS, Drain-Source Voltage(V)
-75 -50 -25
2
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1
1800
VGS=1.5V
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
2000
1600
1400
1200
VGS=1.8V
1000
800
600
VGS=2.5V
400
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
VGS=0V
200
VGS=4.5V
0
0.001
0.01
0.1
ID, Drain Current(A)
1
0
0
10
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2000
1.8
1800
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=650mA
1600
1400
1200
1000
800
600
400
1.6
VGS=4.5V, ID=650mA
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 299mΩ typ.
200
0.6
0
0
MTA340N02N3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 4/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
Coss
10
Crss
1.1
ID=250μA
1
0.9
0.8
0.7
0.6
0.5
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
GFS, Forward Transfer Admittance(S)
3
2
1
1
Pulse Width(s)
10
1
0.1
VDS=10V
Ta=25°C
Pulsed
0.01
0.001
0
0.1
100
Maximum Safe Operating Area
0.01
0.1
ID, Drain Current(A)
1
Maximum Drain Current vs JunctionTemperature
10
1
1
1ms
10ms
0.1
100ms
0.01
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=357°C/W
Single Pulse
DC
0.001
0.9
ID, Maximum Drain Current(A)
100μs
ID, Drain Current (A)
60 80 100 120 140 160
10
TJ(MAX) =150°C
TA=25°C
RθJA=357°C/W
0.01
20 40
Forward Transfer Admittance vs Drain Current
5
4
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA=25°C, VGS=4.5V, RθJA=357°C/W
0.1
0
0.01
MTA340N02N3
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 5/8
Typical Characteristics(Cont.)
Power Derating Curve
Gate Charge Characteristics
400
350
8
PD, Power Dissipation(mW)
VGS, Gate-Source Voltage(V)
10
6
4
VDS=15V
ID=500mA
2
Mounted on FR-4 board with
minimum pad
300
250
200
150
100
50
0
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Qg, Total Gate Charge(nC)
2
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=357°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date : 2014.09.03
Page No. : 8/8
SOT-23 Dimension
Device
Code
TE
N3
XX
Marking:
Date Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA340N02N3
CYStek Product Specification