MTP2305N3

Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 1/ 9
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTP2305N3
BVDSS
-20V
ID
-4.3A
52mΩ (typ.)
66mΩ (typ.)
79mΩ (typ.)
RDSON@VGS=-4.5V, ID=-4.2A
RDSON@VGS=-2.5V, ID=-2A
RDSON@VGS=-1.8V, ID=-1A
Features
• Advanced trench process technology
• Super high density cell design for extremely low on resistance
• Reliable and rugged
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP2305N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTP2305N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2305N3
CYStek Product Specification
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V (Note 1)
Continuous Drain Current @TA=70°C, VGS=-4.5V (Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
PD
-20
±12
-4.3
-3.4
-20
1.38
0.01
-55~+150
V
V
A
A
A
W
W/°C
°C
Tj, Tstg
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note)
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
90
75
Unit
°C/W
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s ; 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTP2305N3
Min.
Typ.
Max.
Unit
-20
-0.5
-
-0.02
-0.65
44
52
66
79
8.3
±100
-1
-10
53
65
85
120
-
V
V/°C
V
nA
-
1101
69
60
7
5
38
9
-
Test Conditions
S
VGS=0, ID=-250µA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250µA
VGS=±12V, VDS=0
VDS=-20V, VGS=0
VDS=-16V, VGS=0, Tj=70°C
ID=-4.5A, VGS=-10V
ID=-4.2A, VGS=-4.5V
ID=-2.0A, VGS=-2.5V
ID=-1.0A, VGS=-1.8V
VDS=-5V, ID=-2.8A
pF
VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-4.3A, VGS=-10V, RD=3.6Ω,
RG=6Ω
µA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 3/ 9
10.6
2
2.8
-
nC
VDS=-16V, ID=-4.3A, VGS=-4.5V,
-0.78
28
22
-1.2
-
V
ns
nC
VGS=0V, ISD=-1.2A
IS=-4.3A, VGS=0V, dI/dt=100A/µs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Recommended Soldering Footprint
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
15
-ID, Drain Current (A)
1.4
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
3V
10
-BVDSS, Normalized Drain-Source
Breakdown Voltage
20
-VGS=2.5V
-VGS=1.8V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=1.5V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.4
VGS=-1.5V
VGS=-1.8V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2.5V
100
VGS=-3V
VGS=-4.5V
VGS=-10V
VGS=0V
1.2
Tj=25°C
1
Tj=150°C
0.8
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IDR, Reverse Drain Current (A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
140
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
180
160
140
ID=-4.5A
ID=-2A
ID=-1A
ID=-0.2A
120
100
80
60
40
20
VGS=-1.8V, ID=-1A
120
VGS=-2.5V, ID=-2A
100
80
60
40
VGS=-4.5V, ID=-4.2A
20
0
0
MTP2305N3
2
4
6
8
Gate-Source Voltage-VGS(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 5/ 9
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) ,Normalized Threshold
Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
Gate Charge Characteristics
100
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
20 40
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
8
VDS=-16V
ID=-4.3A
6
4
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs JunctionTemperature
100
5
ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
100μs
10
1ms
10ms
1
100m
TA=25°C, Tj=150°C
VGS=-4.5V, RθJA=90°C/W
Single Pulse
0.1
DC
0.01
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=90°C/W
0.5
0
0.1
MTP2305N3
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 6/ 9
Typical Characteristics(Cont.)
Power Derating Curve
1.6
PD, Power Dissipation(W)
1.4
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=270 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2013.09.18
Page No. : 9/ 9
SOT-23 Dimension
Marking:
TE
2305
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2305N3
CYStek Product Specification