MTE1K8N25KM3

CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTE1K8N25KM3
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
• ESD protected
Equivalent Circuit
BVDSS
ID
RDS(ON)@VGS=10V, ID=0.5A
RDS(ON)@VGS=10V, ID=1A
RDS(ON)@VGS=10V, ID=2A
RDS(ON)@VGS=6V, ID=0.5A
250V
1A
1.33Ω(typ)
1.4Ω(typ)
1.63Ω(typ)
1.35Ω(typ)
Outline
SOT-89
MTE1K8N25KM3
D
G
S
G：Gate
D：Drain
S：Source
GD D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current *1
Total Power Dissipation @TA=25℃ *2
ESD susceptibility
*3
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature.
Symbol
Limits
VDS
VGS
ID
ID
IDM
Pd
250
±20
1
0.8
4
2
2000
-55~+150
Tj, Tstg
Unit
V
A
W
V
°C
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
*3. Human body model, 1.5kΩ in series with 100pF.
Thermal Data
Parameter
Thermal Resistance, Junction-to-Ambient (Note)
Thermal Resistance, Junction-to-Case
Symbol
Rth,ja
Rth,jc
Limit
62.5
20
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board.
MTE1K8N25KM3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 2/8
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
Unit
Test Conditions
250
1.5
-
0.3
2.3
1.7
1.33
1.40
1.63
1.35
3.5
±10
1
25
1.8
1.8
2.2
1.8
V
V/°C
V
S
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS =VGS, ID=250μA
VDS =15V, ID=1A
VGS=±20V, VDS=0V
VDS =200V, VGS =0V
VDS =200V, VGS =0V, Tj=125°C
VGS =10V, ID=0.5A
VGS =10V, ID=1A
VGS =10V, ID=2A
VGS =6V, ID=0.5A
-
4.5
1
1.5
12
11
13
7
215
16
7.7
-
-
0.79
80
330
1
4
1.2
-
μA
Ω
nC
ID=1A, VDS=200V, VGS=10V
ns
VDS=125V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
IF=1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTE1K8N25KM3-0-T2-G
Package
SOT-89
(Pb-free lead plating & halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTE1K8N25KM3
CYStek Product Specification
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
4.0
3.6
1.2
2.8
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
3.2
10V,9V,8V,7V,6V, 5V
1.0
2.4
2.0
0.8
1.6
1.2
VGS=4V
0.6
0.8
0.4
ID=250μA,
VGS=0V
0.4
0.0
0
5
10
15
VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
20
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
5.0
R DS(on), Static Drain-Source On-State
Resistance(Ω)
1.2
VSD, Source-Drain Voltage(V)
4.5
4.0
3.5
3.0
2.5
VGS=6V
VGS=4.5V
2.0
1.5
1.0
VGS=10V
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.5
0.2
0.0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
5.0
2.8
4.5
ID=1A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(Ω)
2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.4
VGS=10V, ID=1A
2.0
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 1.4Ω
0.0
0.0
0
MTE1K8N25KM3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
10
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
10
VDS=200V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=15V
Ta=25°C
Pulsed
8
VDS=125V
6
4
2
ID=1A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
1
2
3
4
Qg, Total Gate Charge(nC)
5
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
1.2
100μs
RDSON
Limited
1
1ms
0.1
10ms
100ms
0.01
TA=25°C, Tj=150°C
VGS=10V, RθJA=62.5°C/W
Single Pulse
1s
DC
ID, Maximum Drain Current(A)
10
ID, Drain Current(A)
0
1
0.8
0.6
0.4
0.2
TA=25°C,VGS=10V, RθJA=62.5°C/W
0
0.001
0.1
MTE1K8N25KM3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 5/8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
Typical Transfer Characteristics
500
4
TJ(MAX) =150°C
TA=25°C
θJA=62.5°C/W
400
3
350
Power (W)
ID, Drain Current(A)
450
VDS=10V
3.5
2.5
2
1.5
300
250
200
150
1
100
0.5
50
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE1K8N25KM3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTE1K8N25KM3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE1K8N25KM3
CYStek Product Specification
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date : 2014.11.03
Page No. : 8/8
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
E1K8
Date Code
□□□□
H
C
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE1K8N25KM3
CYStek Product Specification