MTDN6303S6R

CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 1/ 8
N-CHANNEL MOSFET (dual transistors)
MTDN6303S6R
BVDSS
ID
RDSON@VGS=4.5V, ID=600mA
RDSON@VGS=2.5V, ID=400mA
RDSON@VGS=1.8V, ID=350mA
Features
20V
760mA
370mΩ(typ)
500mΩ(typ)
1.1Ω (typ)
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(1.8V)
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTDN6303S6R
SOT-363
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V
Continuous Drain Current @ TA=85°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
TA=25℃
Maximum Power Dissipation
(Note 3)
(Note 3)
(Note 3)
TA=85℃
ESD susceptibility
Operating Junction and Storage Temperature
ID
IDM
PD
Tj, Tstg
Limits
20
±8
760
550
3
300
160
2000 (Note 4)
-55~+150
Unit
V
mA
A
mW
V
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
4.Human body model, 1.5kΩ in series with 100pF
MTDN6303S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 2/ 8
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Symbol
Limit
Unit
Rth,ja
417
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
20
0.5
-
1.2
±10
1
10
450
650
1300
-
V
V/°C
V
-
0.02
0.92
370
500
1100
1.4
-
60
14
9
4
10
15
2
1.3
0.3
0.5
-
-
0.81
1.2
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0 (Tj=70°C)
VGS=4.5V, ID=600mA
VGS=2.5V, ID=400mA
VGS=1.8V, ID=350mA
VDS=5V, ID=600mA
pF
VDS=10V, VGS=0, f=1MHz
ns
VDS=10V, ID=600mA, VGS=10V
RG=3.3Ω, RD=16.7Ω
nC
VDS=16V, ID=600mA, VGS=4.5V
V
VGS=0V, IS=500mA
μA
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTDN6303S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTDN6303S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 3/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
5V
4.5V
4V
ID, Drain Current (A)
3.0
BVDSS, Normalized Drain-Source
Breakdown Voltage
3.5
VGS=3.5V
VGS=3V
2.5
2.0
VGS=2.5V
1.5
1.0
VGS=2V
0.5
VGS=1V
ID=250μA,
VGS=0V
1.2
1
0.8
VGS=1.5V
0.6
0.0
0
1
2
3
VDS, Drain-Source Voltage(V)
4
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1600
1
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1400
VGS=1.8V
1200
VGS=2.5V
1000
800
600
400
200
VGS=0V
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
VGS=4.5V
0
0
0.1
0.2
0.3
0.4
0.5 0.6
0.7
ID, Drain Current(A)
0.8
0.9
0
1
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
1.6
900
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
800
700
600
ID=600mA
ID=350mA
500
400
300
200
1.4
1.2
VGS=4.5V, ID=600mA
1
VGS=1.8V, ID=350mA
0.8
VGS=2.5V, ID=400mA
100
0.6
0
0
MTDN6303S6R
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 4/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
100
VGS(th) , Normalized Threshold Voltage
Capacitance vs Drain-to-Source Voltage
Ciss
C oss
10
Crss
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
VGS, Gate-Source Voltage(V)
10
5
VDS=16V
ID=600mA
8
6
4
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.5
1
1.5
2
Qg, Total Gate Charge(nC)
2.5
3
Maximum Drain Current vs JunctionTemperature
10
ID, Maximum Drain Current(A)
0.9
100μs
ID, Drain Current (A)
60 80 100 120 140 160
Gate Charge Characteristics
TJ(MAX) =150°C
TA=25°C
RθJA=417°C/W
0
0.001
20 40
10
20
15
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1.6
1
1ms
10ms
0.1
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=417°C/W
Single Pulse
100m
DC
0.01
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA=25°C, VGS=4.5V, RθJA=417°C/W
0.1
0
0.01
MTDN6303S6R
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
6
VDS=5V
PD, Power Dissipation(W)
ID, Drain Current (A)
5
4
3
2
Single
0.3
Dual
0.2
0.1
Mounted on FR-4 board
with 1 in² pad area
1
0
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
6
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Forward Transfer Admittance vs Drain Current
GFS, Forward Transfer Admittance(S)
10
VDS=5V
1
VDS=10V
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
ID, Drain Current(A)
1
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=417 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTDN6303S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
MTDN6303S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDN6303S6R
CYStek Product Specification
Spec. No. : C814S6R
Issued Date : 2012.05.15
Revised Date : 2014.04.15
Page No. : 8/ 8
CYStech Electronics Corp.
SOT-363 Dimension
303
□□
Marking:
Date
Code
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDN6303S6R
CYStek Product Specification