Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 1/7 CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor BTP2907SL3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.5V(max) (IC=-1A, IB=-100mA). • Pb-free lead plating and halogen-free package Symbol Outline BTP2907SL3 SOT-223 C E B:Base C:Collector E:Emitter C B Ordering Information Device BTP2907SL3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTP2907SL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO -100 -80 -6 V V V Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature IC ICP Pd Tj Tstg -1 -2 (Note) 2 150 -55~+150 A W °C °C Note : Single pulse, Pw≤10ms, Duty Cycle≤30%. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -100 -80 -5 180 - Typ. 125 10 Max. -100 -100 -0.5 390 20 Unit V V V nA nA V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-80V VEB=-6V IC=-1A, IB=-100mA VCE=-2V, IC=-100mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Recommended soldering footprint BTP2907SL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.8 0.25 5mA 0.7 0.2 -IC , Collector Current(A) -IC , Collector Current(A) 1mA 0.15 500uA 400uA 0.1 300uA 0.05 200uA 0.6 2.5mA 0.5 2mA 0.4 1.5mA 0.3 1mA 0.2 -IB=500uA 0.1 -IB=100uA 0 0 0 1 2 3 4 5 -VCE , Collector-to-Emitter Voltage(V) 0 6 1000 HFE, Current Gain 1000 HFE, Current Gain 6 Current Gain vs Collector Current Current Gain vs Collector Current Ta=125°C Ta= 75°C Ta= 25°C Ta= -25°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C -VCE =2V -VCE =1V 10 10 1 10 100 -IC , Collector Current(mA) 1 1000 Current Gain vs Collector Current 10 100 -IC , Collector Current(mA) 1000 Saturation Voltage vs Collector Current 1000 -VCE(SAT), Saturation Voltage(mV) 1000 -VCE =5V HFE, Current Gain 1 2 3 4 5 -VCE , Collector-to-Emitter Voltage(V) 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 VCESAT @IC=10IB 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 BTP2907SL3 10 100 -IC , Collector Current(mA) 1000 1 10 100 -IC, Collector Current(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 -VCES(SAT), Saturation Voltage(mV) -VCE(SAT), Saturation Voltage(mV) 1000 VCE(SAT) @IC=20IB 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VCE(SAT) @IC=50IB 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 1 10 100 -IC , Collector Current(mA) 1 1000 10000 1000 VBE(SAT) @IC=10IB -VBE(ON), On Voltage(mV) -VCE(SAT), Saturation Voltage(mV) 1000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 Ta=-25°C Ta=25°C Ta=75°C Ta=125°C Ta=-25°C Ta=25°C Ta=75°C Ta=125°C VBE(ON) @VCE =-5V 100 100 1 10 100 -IC , Collector Current(mA) 1 1000 Capacitance vs Reverse-biased Voltage 10 100 -IC , Collector Current(mA) 1000 Power Derating Curve 1000 2.5 PD, Power Dissipation(W) Capacitance(pF) 10 100 -IC , Collector Current(mA) Cib 100 10 Cob 1 2 1.5 1 0.5 0 0.1 BTP2907SL3 1 10 VR, Reverse-biased Voltage(V) 100 0 50 100 150 TC , Case Temperature(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTP2907SL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTP2907SL3 CYStek Product Specification Spec. No. : C824L3 Issued Date : 2003.07.31 Revised Date :2013.11.12 Page No. : 7/7 CYStech Electronics Corp. SOT-223 Dimension A Marking: B C 1 2 Device Name 2907S Date Code □□□□ 3 D E Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP2907SL3 CYStek Product Specification