CYStech Electronics Corp. Spec. No. : C319D3 Issued Date : 2008.05.13 Revised Date : 2015.07.14 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN6718D3 Features • High breakdown voltage, BVCEO≥ 100V • Large continuous collector current capability, IC(MAX)=1A(DC) • Low collector saturation voltage • Pb-free lead plating package Symbol Outline BTN6718D3 TO-126ML B：Base C：Collector E：Emitter E C B Ordering Information Device BTN6718D3-X-BL-S Package TO-126ML (Pb-free lead plating package) Shipping 200 pcs / bag, 15 bags/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL : 200 pcs/bag, 15 bags/box Product rank, zero for no rank products Product name BTN6718D3 CYStek Product Specification Spec. No. : C319D3 Issued Date : 2008.05.13 Revised Date : 2015.07.14 Page No. : 2/5 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Base Current Power Dissipation(TA=25℃) Symbol VCBO VCEO VEBO IC ICP IB Pd Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Tj Tstg Limits 180 100 5 1 2 (Note ) 0.2 Unit V V V A A A 1.6 W 10 W 150 -55~+150 °C °C Note : Single pulse, Pw≤300μs, Duty Cycle≤2%. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 180 100 5 90 100 20 50 - Typ. - Max. 100 100 200 300 20 Unit V V V nA nA mV MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=180V, IE=0 VEB=5V, IC=0 IC=350mA, IB=35mA VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTN6718D3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319D3 Issued Date : 2008.05.13 Revised Date : 2015.07.14 Page No. : 3/5 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT HFE Saturation Voltage-(mV) Current Gain---HFE VCE=5V 100 VCE=2V IC=20IB 100 VCE=1V IC=10IB 10 10 1 10 100 1000 Collector Current ---IC(mA) 1 10000 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current On Voltage vs Collector Current 10000 10000 VBESAT@IC=10IB VBEON@VCE=5V On Voltage-(mV) Saturation Voltage-(mV) 10000 1000 1000 100 100 1 10 100 1000 10000 1 10 100 1000 Collector Current--- IC(mA) Collector Current--- IC(mA) Power Derating Curve 10000 Power Derating Curve 1.8 12 Power Dissipation---PD(W) Power Dissipation---PD(W) 1.6 1.4 1.2 1 0.8 0.6 0.4 10 8 6 4 2 0.2 0 0 0 BTN6718D3 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 0 25 50 75 100 125 150 Case Temperature---TC(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319D3 Issued Date : 2008.05.13 Revised Date : 2015.07.14 Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN6718D3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319D3 Issued Date : 2008.05.13 Revised Date : 2015.07.14 Page No. : 5/5 TO-126ML Dimension Marking: Device Name N6718 □□ Date Code Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical DIM Min. 0.118 0.071 0.026 0.046 0.018 0.307 0.425 A A1 b b1 c D E Inches Max. 0.134 0.087 0.034 0.054 0.024 0.323 0.441 Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 DIM e e1 L L1 P Φ1 Φ2 Inches Min. Max. *0.090 0.176 0.594 0.051 0.159 0.118 0.122 0.183 0.610 0.059 0.167 0.126 0.130 Millimeters Min. Max. *2.28 4.460 4.660 15.100 15.500 1.300 1.500 4.040 4.240 3.000 3.200 3.100 3.300 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN6718D3 CYStek Product Specification