Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Features • High voltage, BVCBO=1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol Outline BTC3097T3 TO-126 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs,Duty≦2%. BTC3097T3 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800 6 1 3 *1 1 10 -55~+150 Unit V V V A A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 Cob tr tstg tf Min. 1600 800 6 20 24 5 - Typ. 10 - Max. 10 10 100 0.2 0.35 1.2 35 0.8 3 0.4 Unit V V V μA μA nA V V V pF μs Test Conditions IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=1600V, IE=0 VCB=800V, IB=0 VEB=6V, IC=0 IC=200mA, IB=40mA IC=500mA, IB=100mA IC=500mA, IB=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=500mA VCB=10V, f=1MHz VCC=400V, IC=0.5A, IB1=0.1A IB2=-0.2A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device BTC3097T3 BTC3097T3 Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 10 bags/box, 10 boxes/carton CYStek Product Specification CYStech Electronics Corp. Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 3/6 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.16 0.045 0.14 1mA Collector Current---IC(A) Collector Current---IC(A) 0.04 0.035 0.03 0.025 0.02 0.01 500uA 400uA 300uA 0.005 200uA IB=100uA 0.015 5mA 0.12 0.1 2.5mA 2mA 1.5mA 0.08 0.06 0.04 1mA 0.02 IB=500uA 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.6 20mA 0.3 0.25 0.2 10mA 0.15 8mA 6mA 4mA 0.5 Collector Current---IC(A) Collector Current---IC(A) 0.35 0.1 IB=2mA 50mA 0.4 0.3 20mA 15mA 0.2 10mA IB=5mA 0.1 0.05 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 100 10000 VCE=5V VCESAT@IC=5IB Saturation Voltage---(mV) Current Gain---HFE 6 VCE=2V 10 VCE=1V 1 1000 100 10 1 10 100 1000 Collector Current---IC(mA) BTC3097T3 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 4/6 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Capacitance vs Reverse-biased Voltage 10000 1000 Capacitance---(pF) Saturation Voltage---(mV) VBESAT@IC=5IB 1000 Cib 100 10 Cob 100 1 1 10 100 1000 Collector Current---IC(mA) 10000 0.1 Onn Voltage vs Collector Current 100 Power Derating Curve 10000 1.2 Power Dissipation---PD(W) VBEON @ VCE=5V On Voltage---(mV) 1 10 Reverse-biased Voltage---VR(V) 1000 1 0.8 0.6 0.4 0.2 0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 BTC3097T3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC3097T3 CYStek Product Specification Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 6/6 CYStech Electronics Corp. TO-126 Dimension Marking: C3097 Date Code □□ Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical Millimeters Min. Max. 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 DIM A A1 b b1 c D E Inches Min. Max. 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 DIM e e1 h L L1 P Φ Millimeters Min. Max. *2.290 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Inches Min. Max. *0.090 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC3097T3 CYStek Product Specification